Note: Descriptions are shown in the official language in which they were submitted.
~7~3 ~D 13172
SELF-~LIGNED POWER MOSFET WITH INTEGRAL
SOURCE-BASE SHORT AND METHODS OF MAKING
Background of the Invention
.
The present invention relates generally to power
metal-oxide-semiconductor field~effect transistors (MOSFET's)
manufactured by double diffusion techniques and, more
particularly, to methods of manufacturing such -transistors
with a minimum of masking steps, methods for forming
ohmic shorts between the source and base layers during
the manufacture of such transistors, and transistors
so manufactured.
~ nown power MOSFET's generally comprise a
multiplicity of individual unit cells (numbering in the
thousands) formed on a single silicon semiconductor wafer
with each device being of the order of 300 mils (0.3 in.)
s~uare in size and all cells in each device being electri-
cally connected in parallel. Each cell is typically
between 5 and 50 microns in width. As is described
more fully hereinbelow, one particular known process
for manufacturing power MOSFETIs is a double diEfusion
technique which begins with a common drain region of, for
example, N type semiconductor material. Specifically,
within the drain region a base region is formed by means of
a first diffusion, and then a source region is formed
entirely within the base region by means of a second
dlffusion. If the drain region is N type, then the first
diffusion is done with acceptor impurities to produce
a P type base region, and the second diffusion is done
with donor impurities to produce an N type source region.
In a power MOSFET structure, the source,
base and drain regions correspond respectively to the
emitter, base and collector of a parasitic bipolar
~7~3 RD 13,172
transistor. As is known, if this parasitic bipolar
transistor is allowed to turn on during operation of the
power MOSFET, the blocking voltage and the dV/dt rating
of the power MOSFET are substantially degraded.
Accordingly, in order to prevent the turn on of the para
sitic bipolar transistor during operation of the power
MOSFET, the layers comprising the source and base regions
are normally shorted together by means of an ohmic
connection.
Known power ~OSFET designs in manufacture
require up to six masking steps, some of which must
be ali~n~d to each other with high accuracy to produce
working devices. In particular, to form the source-
base short, between the first and second diffusion steps
a diffusion barrier is applied by means of selective
masking over a portion of the base diffusion surface area
to prevent the subsequent source diffusion from entering
the base diffusion in this area. Thereafter, metallization
is applied for the source electrode, and a portion of
the source metallization also makes ohmic con-tact with
the previously masked area of the base regionO
In this known technique for manufacturing
power MOSFET'S, not only must the masking pattern to
form the source-base shorts be precisely aligned in a
special manufacturing step, but the short occupies a
sign:ificant fraction of the area of each MOSFET unit
cell without contributing to its conductivity during
the ON state.
SUMMARY OF THE NVENTION
It is an object of the invention to provide
a double diffused power MOSFET which may be manufactured
while employing a minimal number of masking steps.
~7~23 ~D 13,172
It is another object of the invention to provide
methods for forming lnte~ral source-base shorts in
double-diffused power MOSFET ' s which methods are useful
either with MOSFET ' s formed by prior art masking procedures,
or those formed by the subject masking procedure.
srieflyr and in accordance with one aspect
of the invention, a double-diffused power MOSFET comprises
individual cells formed on a semiconductor substrate
including a drain region of one conductivity type, for
example N type, and having a principal surface. A
metallized drain terminal is electrically connected to
the drain region, typically on the other surface thereof.
In order to define a base region, a first region of
opposite conductivity type (in this example P type)
is formed in the drain region. The first region is
of limited lateral extent, and has a periphery terminating
at the principal surface. To define a source region, a
second region of the one conductivity type (in this example
N type ) is formed entirely within, and of, lesser lateral
extent and depth than the base region. The seco~d region
has a p~riphery terminatin~ at the principal surface
within and spaced from the periphery of the base region
such that at the principal surface the base region
exists as a band of the opposite conductivity type (in
this example P type semiconductor material) between the
source region and the drain region, both of N type semi-
conductor material. A source terminal is electrically
connected to the second region. A conductive yate
electrode and a gate insulating layer are formed on the
principal surface a-t least laterally over the band of
the first region, and a gate terminal is electrically
connected to the gate electrode. Finally, an ohmic
~ 7~23 RD 13,172
short is formed between the first and second regions
(base and source regions) below the principal surface.
In one form of ohmic short between the base
and source regions, the source terminal comprises a
metallic electrode, preferably aluminum, deposited over
the source region, and the ohmic short comprises at least
one microalloy spike extending from the source terminal
metallic electrode through the second region and partly
into the first region. Such microalloy spikes are formed
by heating the semiconductor substrate after the metallic
electrode has been deposited under appropriate conditions.
In another form, a V-groove is formed by
preferential etching in the source and base regionsO
In particular, the V-groove extends through the source
region, with the bottom of the V-groove extending only
partly into the base region. A metallic source electrode
is deposited over the source region and into the V-groove
in ohmic contact with both the source and base regions
to form both the source terminal and the ohmic short.
From the foregoing and from the detailed
description hereinbelow, it will be appreciated that
the methods of forming the integral source-base shorts
in accordance with the invention and the shorts so formed
are an extremely significant aspect because they
facilitate the overall MOSFET structure and manufacture
process with self-alignment and a minimum number of
masking steps.
Briefly, and in accordance with another aspect
of the invention, a method of manufacturing a double-
diffused power MOSEET begins with the step of providing
a silicon semiconductor wafer substrate including a
~ _
~g~7~23 RD 13, 172
drain region of one conductivity type, for example ~
type, having a principal surface. Next, a first or gate
insulating layer, a conductive gate electrode layer
(for example, highly doped N type polysilicon), a
second insulating layer, and a third insulating layer
are successively formed on the principal surface, the
third insulating layer being the top.
Significantly, a total of only three masking
steps are required. The first mask is applied over the
third insulating layer with a window for ultimately
defining at least one base region and at least one source
region. Next, through successive etching steps, openings
defined by -the windows in the first mask are made through
at least the third insulating layer, the second insulating
layer, and the conductive gate electrode layer. During
the etching, undercutting of the conductive gate layer
occurs. The first mask is then removed.
Next, two impurity introduction steps are
performed, the windows in the various insulating layers
serving as impurity barriers. Specifically, the first
introduction steps defines a base region by introducing
into the drain region through the openings defined by the
first mask impurities approprlate to form a frist region
of opposite conductivity type to the drain region, for
example, acceptor impurities to form P type semiconductor
material. The lateral extent of the base region is
determined in part by the si~e of the openings defined
by this first mask, as well as by the duration of the
introduction of impurities and other processing parameters~
The source region is defined by the second
impurity introduction step, which involves introducing
into the base region, also through the openings defined
~9 7~23 :~D 13 ,17 2
by the first mask, impurities to form a second region
of the one conductivity type (in this example, N type).
Significantly, there is no need for any additional
impurity barrier over any part of the base region. The
source region is formed entirely within the base region
such that at the principal surface the first region
exists as a band of oppsite conductivity type between
the source and the drain region. ~uring the source
introduction, a layer of silicon dioxide is grown a-t
least on the sidewalls of the opening through the gat~
electrode layer.
Next, an insulating layer on the surface of
the source region is removed with a collimated beam in
an area defined by the openiny in the third insulating
layer defined by the first mask. The collimated beam
allows this etching to proceed without removing the silicon
dioxide layer on the side walls of the opening through
the gate electrode layers.
The second masking step ~efines gate contact
areas on a portion of the device other than at the
location of the source region. Using windowns in the
second mask, the third insulating layer and the second
insulating layer are successively etched through to the
polysilicon gate electrode layer. Thereafter, the
second mask is remo~ed.
Next, electrode metal such as aluminum i5 coated
onto the wafer and is then patterned by means of a
third mask to form source and gate electrode layers.
Finally/ in order to produce an ohmic short
between the first and second regions comprising the
base and source regions, the waEer is heated to form at
least one microalloy spike extending from the me-tal
source electrode through the source region and partly
RD 13 ,172
into the base region.
In another method in accordance with the
invention the overall device is similarly formed, but
the source-base short is Eormed by preferential etching
to form a V-groove, and then filling the V-groove with
-the source electrode material in ohmic contact with both
the source and base regions. More particularly, after
the insulating layer on the surface of the source region
is removed with a collimated beam, the second and first
layers are preferentially etched to form a V-groove, the
V-groove extending through the second region and the bottom
of the V-groove extending only partly into the first
region.
At this point, the second mask is provided
with windows for defining the gate contact area, and
the third insulating layer and the second insulating
layer are successively etched through to form an
opening for the gate electrode. The second mask is
removed.
~3 Finally electrode metal is coated onto the
wafer and is then patterned by means of a third mask
to form source and gate electrode layers. The source
layer extend into the V-groove in ohmic contact with
both the second and first regions.
While the methods of forming the source-base
shorts in accordance with the invention are particularly
advantageous when employed in combination with the minimum
masking technique of the present invention providing
a double-diffused power MOSFET with self-aligned channels,
they are also applicable to power MOSFETs formed by means
o~ other techniques.
~ 23 RD 13J172
BRIEF DESCRIPTION OF T~E DRAWINGS
_
While the novel features of the invention are
set forth with particularity in the appended claims,
the invention, both as to organization and content, will
be better understood and appreciated from the following
detailed description taken in conjunction with the
drawings, in which:
FIG. 1 iS a sectional side view depicting one
step in the manufacture of a prior art double-diffused
power MOSFET showing diffusion barriers for base
shorting bars still in place;
FIG. 2 is a sectional side view depicting
a prior art double-diffused power MOSFE~ substantially
completed;
FIG. 3 depicts a semiconductor wafer after
initial processing to form a self-aligned power MOSFET
cell in accorda~nce with the present invention;
FIG. ~ depicts the condition of the cell after
a subsequent step where the top four layers have been
etched through, and a first mask removedi
FIG. 5 depicts the wafer after the base and
source diffusions;
FIG. 6 depicts removal with a collimated
beam of oxide grown over the source region;
FIG. 7 depicts the second masking step and
the subsequent etching to expose the gate electrode;
FIG. 8 depicts metallization of source and
gate electrodes applied in combination with a third
masking step;
E'IG. 9 depicts integral source-base shorts
formed by the microalloy technique of the present
invention;
~g ~23 RD 13,172
FIG. 10 depicts a V-groove formed by preferential
etching in accordance with another aspect of the
invetnion; and
FIG. 11 depicts a unit cell with an integral
source-base short formed by filling the V-groove with
metallization.
DESCRIPTION OF T~E PREFERRED EMBODIMENTS
It is believed that the present invention will
be better understood and appreciated in view of the
details of one form or pror art double-diffused power
MOSFET described herein with reference to FIGS. 1 and 2.
In particular, the prior art ~OSFET manufacturing
technique depicted in FIGS. 1 and 2 requires up
to six masking steps which must be aligned to each other
with high accuracy to produce working devices.
With refernce to FIG. 2 in particularl a
completed prior art power MOSFET comprises a multiplicity
of unit cells 16, numbering in the thousands, formed in
a single semiconductor wafer 18 and ele~trically connected
in parallel on each device. The unit cells 16 have
a common drain region 20 of N or N type silicon semi-
conductor material having a common metal electrode 22
in ohmic contact through a highly doped N substrate 24.
The unit cells 16 have individual souxce 26
and base regions 28 produced by a double diffusion
-technique hereinafter described. At the substrate
surEace 29, each base region 28 exists as a band 30 of P
type semicor.ductor material between N type source 26
and drain 20 regions. A metal electrode 32 covers most
of the device, and makes ohmic contact with both the source
26 and base 28 regions, contact to each base region 28
being facilitated by an extension 34 of the base region 28
~9~23 RD 13,172
up to the surface of the semiconductor wafer. This
extension 34 may be viewed as a shorting bar, and
necessarily occupies surface area. Thus the metal
electrode 32 serves not only as a common source contact,
but as the requisite source-base short.
To produce an enhancement mode channel for
field-e~fect transistor operation, a conductive
gate electrode 36 separated by an insulating gate oxide
layer 38 is positioned on the surface 29 of the
semiconductor wafer 18 at least laterally over the band
30 of P type material comprising the base region 28.
While many MOSFET ' s include a metal gate electrode, for
convenience in fabrication power MOSFET ' s typically employ
an equivalent highly-doped and therefore highly conductive
layer of polycrystalline silicon, and the name MOSFET is
retained. The individual segments 36 of gate electrode
material comprise a single perforated layer and thus
are electrically connected togehter even though not
apparent from the sectional side view of FIG. 2.
The upper surEaces of the gate electrode
segments 36 are protected by suitable insulation, for
example a silicon dioxide layer 40 and a silicon nitride
layer 42.
For gate terminals, gate contact windows 44
are provided, and metalli~ation 46 is applied through
these windows in ohmic contact with the gate electrode
material 36. The upper surface of the completed device
is essentially completely covered with metallization,
except for insulating gaps 48 between the source-base
metallization 32 and the gate metallization 46.
A multiplicity of the unit cells 16 are formed,
numbering in the thousands as previously stated. No
-- 10 --
~L9~23
RD 13,172
particular plan view is depicted herein as a variety of
known arrangements are suitable. For example, the
individual cells 16 may be arranged in a closely-packed
hexayonal pattern, s~uares, or rectangular strips. While
there are many thousands of unit cells 16, only a few
gate,contact windows 44 are provided. Due to the
relatively little gate current which flows extremely
low resistance to the interconnected gate electrodes
is not required.
In operation, each unit cell 16 is normally
nonconducting, with a relatively high withstand voltage.
When a positive voltage is applied to the gate
electrode layer 36 via the gate terminal metallization
46, an electric field is created which extends through
the gate insulating layer 38 into the base region 28
and induces a thin N type conductive channel just under
the surface 29 below the gate electrode 36 and insulating
layer 3B. As is known, the more positive the gate voltage,
the -thicker this conductive channel becomes, and the more
working current flows. Current flows horizontally near
the surface 29 between the source 26 and drain 20 regions,
and then vertically through the remaining drain region 20
and through the substrate 24 to the metal drain terrninal 22.
With r~ference now to both prior art FIGS~ 1 and
2, a typical prior art manufacturing process begins with
an N/N epitaxial wafer lB of suitable epitaxial thickness
and resistivity to support the desired voltage. In
particular, the wafer 18 comprises the N silicon
subs-trate 24 approximately 15 mils thick and having a
resitivity in the order of 0.~1 ohm-centimeter. The
N doped portion 20 of the wafer 18 ultimately forms a
common drain region 20 Of the power MOSFET.
71D~3
RD 13,]72
The wafer 18, and particularly the drain region
20, have a principal surface 29 on top of which a number
of layers are successively applied. Specifically, the
gate oxide layer 38 is first grown on the surface 29
of the drain region 20 by heating in a furnace in the
presence of oxygen. Next, the highly-conductive poly-
silicon gate electrode layer 36 is deposited, which may
comprise, for example, 1.1 microns of polysilicon
which has been highly doped with, for example, phosphorus.
Next, another layer 40 of silicon dioxide is
grown on top of the polysilicon gate layer 36. This in
some cases is followed with the top layer of silicon
nitride 42.
After the wafer and uniform surfaces layers
are complete, a fine-geometry photoresist mask (not shown~
is applied to define the location of the P diffusions
for the base regions, and the four top layers 42, 40 36 and
38 are appropriately etched through to the surface 29
of the drain region 20. Following this, to form the
base region 28, a P diffusion is performed, for example,
three microns thick, by diffusing appropriate acceptor
impurities into the drain region 20. A temporary oxide
layer 52 is grown on the wafer surface 50 simultaneously
with the P diffusion.
Next, in this prior art process, prior to
the second diffusion a diffusion barrier comprising
portions of the oxide layer 52 is formed by means of
a fine-geometry photoresist mask ~not shown) requiring
relatively precise alignment to leave the oxide 52
which was grown during the dirst diffusion step only
over part of the base region.
After removal of the photoresist mask, the
- 12 -
7~
RD 13,172
second diffusion step is performed by diffusing
appropriate donor impurities into the base region to
form the N source regions ~6. At the same time, an
oxide lip 5~ is grown at the edge of the polysilicon
gate electrode 36.
Next, a layer of silicon dioxide (not shown) is
deposited over the entire surface of the wafer, and a
third mask is provided for defining contact areas. By
means of this third mask, the oxide 52 over the extension
34 of the P base region 28 to the surface ls etched
through, as well as the just-deposited silicon dioxide
over the N source region 26. The top layers 42 and 40
are also etched through to form the gate contact window 44.
Next, metal, preferably aluminum, is evaporate
onto the wafer and by means of another mask, etched so as
to leave the electrode metallization 32 and 46 over
substantially the entire cell 16, except for the
insulating gaps 48 surrounding the gate electrode
terminal 46. With this prior art construction, the
source electrode 32 makes ohmic contac-t with both the
source region 26 and also the P base region 28 via the
extension 34. Thus, a source-base short is provided to
prevent the turn on of the parasitic bipolar transistor.
It will be appreciated that this conventional
process for forming a power MOSFET, with integral short
between the source and base regions/ requires a number
of masking steps, alignments, as well as a source
diffusion barrier.
The remaining drawings FIGS. 3-11 depict methods
in accordance with the present invention, and power
MOSFET's formed thereby.
Referring now ~o FIG. 3~ th~ formation of
- 13 -
~ 7~3 RD 13,172
a self-aligned double-diffused power MOSFET with integral
source-base short in accordance with the present invention
begins with an N/N epitaxial wafer ~0 having a highly-doped
N bul~ substrate 62 and an expitaxially grown drain
region 64 of one conductivity type, for e~ample, N type
semioonductor, having a principal surface 66. Next~ a
first or gate insulating layer 68 is formed and is
preferably in the foxm of a single layer of silicon
dioxide grown by heating the wafer 60 in a furnace in
the presence of oxygen. Alternatively, the first
insulating layer 68 could comprise, for instance, a
layer of silicon dixoide grown in the foregoing manner,
over which a layer of silicon nitride is deposited.
This is followed by the deposition of the conductive
gate electrode layer 70 which, by way of example, may
comprise a 1.1 micron layer of polysilicon which has
been high doped with phosphorus to form a highly conductive
N layer. Thus, in this construction, the gate electrode
is not actually metal, hut is the electrical equivalent.
Next, a second insulating layer 7~, preferably
comprising a single layer of silicon dioxide, is formed
on the polysilicon layer 70. The second insulating
layer typically is 6 to 7 thousand angstoms thic~ in
order to provide good dielectric isolation between a
completed conducitve gate layer 70 and a completed
source electrode layer 102, as depicted in Figure 9.
The ~orming of the second insulating layer 72 is followed
by the deposition on top of the layer 72 of
a third insulating layer 74, preferably comprising a
single layer of aluminum oxide. (The purpose served by
the third insulating layer 74 is discussed below.~ The
four layers 68, 70, 72 and 7~ are done consecutively~
- 14 -
~ 3 RD 13,172
and are present everywhere on the wafer surface.
Next, by rneans of conventional pho-toresist
techniques, a first mask 76 is provided over the third
insulating layer 74, with windows 78 which ultimately
define the source and base regions. While this first
mask 76 is a relatively fine-geometry mask, no alignment
is required since it is the first mask and the wafer up
to this point simply comprises uniform layers. Significantly
in theprocess of the present invention the first mask
78 is the only fine-geometry mask. FIG. 3, thenJ
illustrates the wafer immediately after the first mask
76 has been provided.
Referring next to FIG. 4, in the preferred
method, the third insulating layer 74, the second
insulating layer 72, the conductive gate electrode layer
70, and the first insulating layer 68 are successively
etched through to form respective openings 80, 82,
84 and 86 in the areas defined~by the windows 78 in the
first mask 76, with undercutting of the conductive
gate layer 70 being necessary. More particularly,
the upper layer 74, where it comprises a single layer
o silicon nitride, is plasma etched away. Then, the next
lower layer 72, where it comprises a single layer of
silicon dioxide, is chemically etched away. Then the
polysilicon layer 70 is plasma etched away with the
etching continued for a su-fficiently long time to
produce significant sideways etching of the polysilicon
layer 70 for reasons which will hereinafter be
apparent. For example, in the order of 1.0 microns of
undercutting is sufficient. Finally the first layer
68 where it comprises a single layer o~ silicon dioxide,
is chemically etched away. The photoresist layer 76 is
RD 13,172
then removed, leaving the wafer in the condition depicted
in FIG. 4.
Referring next to FIG. 5, after appropriate
cleaning, the transistor base region 76 is introduced
into the drain region 64, preferably by means of first
a diffusion. Specifically, impurities appropriate to
form a first region of opposite conducti~ity type are
diffused in-to the drain region 64 through the openings
80, 82 84 and 86 defined by the first mask 76. In
this example, acceptor impurities are diffused to provide
P type semiconductor material for the base r~gion 76.
The first diffusion to form the base region 76 is, for
example, approximately 3 microns deep. The lateral extent
of the base region 76 is determined in part by the size
of the openings 80, 82 84 and 86 defined by the first
mask 76, as well as by the other process parameters,
such as duration, temperature and pressure. The
base diffusion region 76 has a periphery 79 terminating
at the principal surface 66.
Next, without any further masking steps with
attendant alignment, the transistor source region 88 is
introduced into the base region 76, preferably by means
of a second diffusion step. More particularly, through
the same openings 80, 82, 84 and 86 impurities appropriate
to form a second diffused region 88 of the one conductivity
type are introudced, in this example, donor impurities
to form a highly-doped N type semiconductor source
region 88. This second diffusion is in the order of
l.0 micron deep, and is formed entirely within and has
lesser lateral exten-t and depth than the base region
76 formed during the first diffusion. As a result, at
the principal surface 66 the base region 76 exists as a
- 16 -
~7~23 RD 13,172
band 90 of the opposite conductivity type (P type)
+
between the source region 88 (N type) and the drain
-
region 64 (~ type).
Additionally, during the second diffusion
step to form the source region 88, a layer 92 of silicon
dioxide is grown over the surface of the source region 88,
and an extension 9~ of this layer 92 is grown on the
sidewalls 84 of the polysilicon gate electrode 70. At
this stage the wafer exists as depicted in FIG. 5.
Next, as depicted in FI~. 6, the oxide layer
92 (FIG. 5~ on the surface of the source region 88 is
removed preferably by reactive ion etching, or, alternatively,
for example, by ion milling, with a coolimated beam 94 having
a high selectivity ratio for silicon dioxide over
silicon. In one collimated beam ion etching process,
the wafer is excited by an RF source which causes
oscillatory movement of the etching ions perpendlcular
to the wafter surface so that a directional effect results.
During removal of the oxide layer 92 with the collimated
beam 92, the top or third layer 74 serves to protect the
top surface of the MOSFET being formed, with the edge
of the window 80 providing a shadow mask. As a result
of this removal of the oxide layer 92 with the collimated
beam 94, the silicon dioxide layer 92 on the
sidewalls 84 of -the polysilicon gate 70 is not removed.
Next, as depicted in FIG. 7, a second photo-
resist mask 96 is applied for the purpose of defining
the gate contact opening window. Using the mask 96, the
third insulating layer 74, at least where it comprises
silicon nitride, is plasma etched away and the second
insulating layer 72, is chemically etched away to form
openings 98 and 100 for the gate contact window. The
- 17 -
~97~3 RD 13,172
second mask 96 is then removed, and the wafer cleaned.
Next, as depicted in FI~. 8, electrode metal,
preferably aluminum, is coated, preferably by evaporation,
obto the device and patterned as at 102 and 103 to form
source and gate electrode layers. This patterning requires
the third mask in the preferred process of the present
invention. A common drain electrode 105 is also metallized
onto the substrate 62, but requires no pa-tterning.
In order to provide ohmic contact between the
source 88 and base layers 76, the entire device is heat
treated to cause microal'oying as depicted in FIG. 9.
In particular, microalloy spikes 104 are produced, which
extend all the way through the source diffusion layer 88
and partly into the base diffusion 76. It will be appre-
ciated that the precise process parameters must be
selected to produce the deisred results. However, by
way of example, without intending to limite the scope
of -the invention, for an N source layer 88 which is less
than about 0.7 microns thick, heating at 450C for one
hour in a nitrogen atmosphere is sufficient to cause the
desired degree ofmicroalloying.
In the mechanism of microalloying, the silicon
of the source 88 and base 76 layers dissolves in the
aluminum source contact 102, allowing the microalloy
spikes 104 to form downwardly.
The extent of the microalloying can be varied
by controlling a number of parameters, for example:
(1) The particular metal employed for the contact
electrode 102. Pure aluminum may be employed, or any
number of aluminum-silicon alloys.
(2) The temperature and duration of the heat
treatment, as well as the atmosphere.
- 18 -
~97~3 ~D 13,172
(3) The substrate cyrstallographic orientation
and surface condition.
(4) The source and base diffusion depths and
concentrations.
It will be appreciated that this microalloying
technique as depicted in FIG. 9 makes the required ohmic
contac~ between the source 88 and base regions 76,
eliminating the shorting bar 34 (FIG. 2) as required in
the prior art MO~FET. Not only is the need for this
partieular masking step eliminated, but the unit cell
size is reduced.
In accordance with the invention, there is
provided a seeond teehni~ue for forming a source-base
short in a power MOSFET which involved employing known
preferential etching techniques to form a V-groove.
In the second technique in aeeordanee with
the invention, processing proeeeds as described above
beginning with FIG. 3 up through FIG. 6. The wafer
substrate 60, however, is selected to have the particular
cyrstallographie orientation of ~100~ .
Referring to FIG. 10, following FIG. 6 as before,
the source and base diffused regions 88 and 76 are
preferentially etched to form a V-groove 106, the V-groove
106 extending all the way through the source region
88 with the bottom 108 of the V-groove 106 extending
only partly into the base region 76. Various preferential
etehants are known, any o~ which may be employed in
the practiee of the present invention. For example
one suitable etehant is a mixture of potassium hydroxide
and isopropanol in a ratio of approximately 3:1. This
partieular etching mixture etches silicon at a rate of
5 mierons perhour when the mixture is maintained at
approximately 60C. Other orientation-dependent etehes
-- 19 --
~7~ RD 13,]72
may also be used in practicing the invention. For
example, an article by Don L. Kendall, entitled "On
Etching Very Narrow Grooves In Silicon", _pplied Physics
Letters, Volume 26, pages 195-198 (1975) discusses
suitable etchants.
In accordance wi-th the invention, no particular
additional masking step for the etching is required
for the reason that the collimated beam step of FIG. 6
leaves all other areas protected by various insulating
layers which, as described above, preferably comprise
either silicon nitride or silicon dioxide.
Next, although not specifically illustrated
with reference to the ~-groove etching technique of the
invention, the second mask is applied, such as the
mask 36 depicted above with reference to FIG. 7, and
the gate contact windows 98 and 100 are formed. This
second mask 96 is then removed.
Finally, as depicted in FIG. 11, metal is
coated, preferably by evaporation, onto the device
and patterned to form source and elec-trode layers, as
described above with reference to FIG. 8. With the
V-groove 106, the source electrode 102 is in ohmic
contact with both the source 88 and base 76 regions.
While described hereinabove with particular
reference -to the self-aligned technique of the
present invention, it will be appreciated that either
of these methods ~or forming source-base shorts in a
power MOSFET may be applied to other processes as well,
generally comparable to those described hereinabove with
prior art FIGS. 1 and 2~
While specific embodiments of the invention
have been illustrated and described herein, it is
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~ 7~3 RD 13,172
realized that modiflcations and changes ~ill occur to
those skilled in the art. For example, if the base
and source regions 76 and 80, respectively, are introduced
into the drain region 6~ of the power MOSFET of either
Figure 9 or Figure 11 by means of ion implanting, rather
than diffusion as specifically described above, then
there is no need for the silicon dioxide layer 68 bf
Figure 3 to be removed as in Figure 4, and then replaced
by the silicon dixoide layer 92, as in Eigure 5. This
is because the appropriate impurities can be introduced
into the drain region 64 by ion implanting directly
through the silicon dioxide layer 68. Additionally,
the source and drain electrode layers of the power
MOSFET descri.bed above could be formed by a coating
process comprising sputtering in contrast to
e~aporation, as described above. It is therefore to
be understood that the appended claims are intended to
cover the foregoing and all such modifications as fall
within the true spirit and scope of the invention.
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