Note: Descriptions are shown in the official language in which they were submitted.
1 30q 1 57
SUBASSEMBI,IES FOR OPTOELECTRONIC ~YBRID INTE~GRATED CIRCUITS
Bacl~round of the Invention
This invention relates to optoelectronic integrated circuits (OEICs)
and, more particularly, to subassemblies for hybrid versions of OEICs in which
5 individual chips are mounted on a base and are optically and/or electronicallyinterconnected with one another. The chips themselves may be discrete devices
such as laser diodes or photodiodes, or integrated devices such as combinations of
p-i-n photodiodes and field effect transistors (pinFETs), or integrated circuits such
as transmitter circuits or receiver circuits.
In electronic ~echnologies, printed circuit (PC) boards are essentially
ubiquitous, being found everywhere from TV sets to computers, from homes to
satellites. PC boards enable individual electronic chips and cornponents to be
interconnected via metalization patterns deposited on an insulating substrate, such
as fiberglass or ceramic board. This technology is very mature, resulting in
15 boards which are relatively easily manufactured with high reliability and
reasonably low cost. ~n contrast, optical and optoelectronic technologies are intheir infancy. Discrete devices populate the marketplace, but these components
are typically fabricated from high-tech Group III-V compound processes and are
packaged in metal or ceramic hollsings using speciali~ed techniques and
20 equipmellt that typically render them very expensive. Yields for discrete devices
tend to be relatively low and, while integratioll of optoelectronic cornponents is
under investigatioll, for the near future, it portends even lower yields,
Conseqllently, there is a need for another approach, comparable to the PC board
approach for electrorlic devices, to enable individual optical and electronic chips to
25 be optically and electronically interconnected and packaged in an easily
manut`acturable and relatively low-cost fashion.
Summary of the Imention
In accordance with one aspect of the invention, optoelectronic chips
are mounted on a single-crystal semiconductor base and are optically
30 interconnected to one another by waveguides and couplers integrally forrned on
the semiconductor material. The integrated circuit formed on the base may
function, for example~, as a transceiver.
In one embodirnent, a single-crystal semiconductor lid is mounted on
the base to form an enclosure including cavities which optically and/or electrically
35 isolate the corr~ponents frorn one another.
1 309 1 57
In another embodiment, at least one of the waveguides on the base extends
under the lid to the exterior of the enclosure, thereby enabling a fibcr to be coupled to
the waveguide without having it penetrate the enclosure.
In a related embodiment, an alignment fixture is mounted on one end of
5 the base for alignil g a fiber to the waveguide.
In still another embodiment, a semiconductor laser has a mesa which
engages a groove for aligning the laser to one of the waveguides.
Preferably, the base, lid and fixture are made of silicon in order to exploit
the relatively mature technology which has developed in the integrated circuit field. In
10 this ease, the waveguides are made of silica and can be designed to cover the most
common range for single-mode light propagation of 0.7~ ,um. In this form, the
invention is said to utilize "silicon optical bench" technology.
In accordance with one aspect o~ the invention there is provided an
optoelectronie integrated circuit subassembly comprising a single-crystal semiconductor
15 base having a major surface and an insulative layer formed on said surfac., optical
waveguides integrally rormed on said surEace, at least two optoelectronic chips mo-lntecl
on said base and optically coupled to said waveguides, said chips being physically separated
from one another, a single crystal semiconductor lid on said base, said lid including at least
two physically separate eavities for receivillg sakl chips, said cavities being separated by
2() material in said lid which electrically and optically isolates sakl chips from one ano~her.
In accordance with another aspect of the invention there is provided an
optoeleetronie subassembly comprising a single-crystal semiconductor base, an
optoeleetronie deviee mounted on said base, means tor optically coupling said devicc Lo an
optieal Eiber, and means for reeeiving at least two spaeed-apart parallel rocls for guiding
25 said subassembly into alignment with other equipment exterior said subassembly.
I~rief Desc~ipti e Drawin~
The invention, together with its various features and advantages, can be
readily understood &om the following more detailed description taken in conjunction with
the accompanying drawing, in which the figures are schematic and have not been drawn ~o
30 scale in the interest of clarity.
FIG. 1 is an isometric view of an optoelectronic transceiver subassembly
(with the lid removed) in accordance with one embodiment of the invention.
,
- 2a -
1 3~S I 57
FlGs. Z-S are cross-sectional views of portions of the base showing
how light in the integral silica waveguide can be deflected upwardly so as to
provide an optical test point or to couple light to an on-board photodetector.
FIG. 6 is a cross-sectional view of a silica waveguide formed on the
5 silicon base of FIG. 1.
FIG. 7 shows the arrangement of the cores of the silica waveguides in
the region where couplers are formed on the silicon base of FIG. 1.
FIG. 8 shows an enlarged view of 'tlOW the semiconductor laser of
FIG. I is aligned to the silica waveguide.
FIG. 9 is a cross-sectional side view of FIG. 4.
FI&. 10 shows a tandem V-goove arrangement utilized to align and
couple an optical fibel to the silica waveguide of FIG. 1.
FIG. 11 shows a cross-sectional view of a subassembly of the type
depicted in FIG. 1, 'out for simplicity only two devices, a laser diode and a
photodiode, are depicted on the silicon base. This figure illustrates several
1~ features: a silicon lid which isolates Ihe devices from one another; a waveguide
,~
.~`
1 309 1 57
- 3 -
which extends from under the lid to the exterior of the enclosure so that the fiber
need not penetrate the enclosure; and an alignment fixture at one end of the base
for aligning the fiber to the waveguide.
FIGs. 12-13 show how the subassembly can be adapted to guide rods
5 so that~ in the fashion of PC boards, it can be plugged into a frame of e~uipment.
Detailed Description
Turning now to FIG. 1, there is shown an optoelectronic transceiver
formed on a single-crystal semiconductor substrate, preferably silicon in order to
exploit the rnature processing technology and standardized commercial equipment
10 available in this field. A transceiver has been depicted for the purposes of
illustration only, because it tends to represent most of the optoelectronic chips
which would be found in other circuits such as transmitters and receivers. In
general, the silicon base 10 has at least its major surface 12 oxidized ~e.g., to form
SiO2 layer 12). In addition, the transceiver includes a plurality of single-mode or
15 multi-mode silica waveguides integrally formed on the silicon base in order to
optically interconnect the various optoelectronic chips. Illustratively, these
waveguides include a transmission waveguide 14 and optical couplers 20 and 23.
Waveguide 14 couples a laser diode 16 to an optical fiber 18, and coupler 20,
depicted ns an evanescent field coupler for single-mode applications, has a
2() wavegllide segment 22 for coupling the optical fiber 18 to a receiver
photodiode 24 and a waveguide segment 26 for optically coupling laser 16 to a
power monitor photodiode 28. The other coupler 23, which is also shown as an
evanescent field coupler, taps a small portion of the power from the waveguide 14
in order to provide an optical test point at location 25, a function which will be
25 described later. For multi-mode applications the couplers 20-23 would preferably
take the form of well-known Y-couplers rather than evanescent field couplers.
The oxide layer 12 on the base serves to electrically isolate the
various electrical contacts formed thereon and to optically isolate the evanescent
part of the optical mode in the waveguide from the base.
As shown in FIG. 6, the silica waveguides typically have an
approximately semi-circular core 30 surrounded by a lower cladding 32 and an
upper cladding 34: T,~he semi-circular shape of the core matches the mode in thewaveguide 14 (FIG. 1) to that in the fibe~ 18, and is about 5 ~Lm in diameter for
single-mode propagation. Preferably, the lower cladding 32 is forrned by
35 oxidizing the surface of the silicon base 10, and the core is folTned by depositing
phosphosilicate glass by chemical vapor deposition, pattcrning the ghlss to define
, . , . ~ :
1 3"9 1 57
- the core and then flowing oE the patterned core to form the semi-circula~ shape.
The upper cladding 34 is then formed by depositing silica and, subsequently,
densification of the silica glass. This process is described in Canadian application
Serial No. 592,330 filed on February 28, 1989 entitled "Device Including a
Substrate-Supported Optical Waveguide, and Method of Manufacture".
Waveguides of this type have optical losses of less than 0.03 dB/cm in the
wavelength range of principal interest for optical communications; that is, 0.7-1.6
,um. Couplers involve side-by-side positioning of two cores, as shown in FIG. 7,so that the evanescent ~leld of one waveguide overlaps the adjacent one
sufficiently to transfer optical power from one to the other. Such couplers are
described in Canadian application Serial No. 592,569 filed March 2, 1989 entitled
"Device Including a Component in Alignment with a Substrate-Supported
Waveguide".
In addition to the optical chips described above, the transceiver is
shown schematically to include electronic circuit chips, such as the laser driver
circuit 40 connected to the laser diode 16 and the receiver circuit 42 electrically
connected to both the receiver photodiode 24 and the monitor photodiode 28.
Positioning the photodiodes as shown tacilitates echo cancellation, if required;however, the circuit 40 and photodiode 28 can be positioned on the same side of
waveguide 14 to avoid the cross-over electrical connection 7. ~evertheless,
provided the cladding oE the waveguicle is thick enough to avoid significant
absorption by the metal in the com~ection, the cross~over can be utilized.
The disc~lssion which follows will Eoc~ls primarily on the optical
chips and, in partic~llar, on the manner in which they are optically coupled to the
silica waveguides,
The coupling of the silica waveguide to a photodetector is shown in
FIGs. 2-5. In one ernbodiment, as shown in FIGs. 2 and 4, the photodiode 24 is
oriented flat on the base 10 and is elevated above the waveguide 22 by the
underlying electrodes 44, along with solder bumps 46 disposed between the
electrodes 44 and photodiode 24 (FIG. 4). In order to redirect the light in the
waveguide 22, a groove 11 is etched through the core 30 (FIG. 2) so that the axis
of the groove is transverse to the axis oE the waveguide, and one sidewall remote
from the end of the waveguide is metali~ed to form a reflector 13. Thus, light
emanating from the end of the waveguide, which strikes the reflector 13, is
redirected upwardly to the photodiode 24.
~ . , ., ~
. ~
. . .
- 5- 3~q 1 57
`` Alternatively, as shown is FIG. 3, the end of the waveguide 22 can
be shaped to form an oblique surface 15 which undercuts the end of the
waveguide and serves, by total internal reflection, to redisect the light upwardly to
the photodiode 24.
Importantly, these techniques for redirecting the light travelling in
the waveguides to a direction upwardly from the base 10 give rise to a significant
feature of the invention; that is, the provision of a test point 25, as shown inFIG. 1. Test point 25, which corresponds to the locations of FIGs. 2 and 3 wherelight is redirected upwardly by the oblique reflecting surfaces, can be utilized to
monitor assembly functions or circuit operations. Such applications are described
in Canadian application Serial No. 592,333 filed on February 28,1989 entitled
"Testing in the Manufacture, Operation and Maintenance of Optical Device
Assemblies". For example, in order to determine whether or not the laser 1~ is
accurately aligned to the waveguide 14, coupler 23 couples a small fraction of the
light from the waveguide 14 to the test point 25. It is contemplated that a testhead, containing a photodetector in the appropriate position, could be positioned
over the base 10 during assembly. With the laser operating, laser-to-waveguide
alignment is achieved when the optical power at test point 25 is maximized. In
lilce fashion, other test points could be incorporated on the base 10 to enable
vario~lse forms of testing and measuring to be performed, either automatically
during operation of the transceiver, or manually in the field by allowing a
~; cra~tsman to position an appropriately designed test head over the test point to
determine whether a failure has occurred in the circuit.
Alternatively, as shown in FIG. 5, the photodiode need not lay llat
on the base 10 and, in such cases, a V-groove anisotropically etched in the base10 can be utilized to position the photodiode 24 along the sidewall remote from
the end of the waveguide 22. In this fashion, the light emanating from the end
of the waveguide strikes the photodiode directly. This con~lguration has the
advantage that the oblique orientation of the photodiode reduces the likelihood
that spurious reflections will be coupled back into the waveguide 22 and possibly
disrupt other components, such as lasers, coupled to that waveguide.
The coupling of the laser diode 16 to the waveguide 14 is depicted
in FIGs. 8 and 9. The alignment scheme described here can be utilized
independently of the optical test point 25 or, if desired, in conjunction therewith.
As shown in FIG. 8, the laser diode 16 has a mesa 19 formed on one surface
thereof, and the base 10 has a groove 21 axially aligned with the waveguide 14.
;, ~
.'t.
-6- 1309157
The mesa may be formed on the laser specifically for purposes of alignment or
may be an integral part of the laser for other purposes (e.g., the waveguiding
ridge of a ridge-waveguide laser). In any case, the mesa 19 is guided by the
groove 21 to provide alignment of the active region 17 of the laser diode to the5 waveguide 14. The mesa and groove may be clesignated to produce precise
alignment to the waveguide directly, or may produce only coarse alignment if so
desired. In the latter case, the laser diode 16 may be optically pumped by a
separate laser (e.g., a Nd:YAG laser (not shown) if laser diode 16 is a 1.3 ,um
InP/InGaAsP device), and the light coupled into the waveguide 14 is maximized
10 by monitoring either the light coupled into the fiber 18 or into the test point 25.
Optical pumping of the laser diode 16 is achieved by providing an aperture 23 inthe metalization on the top side of the laser so that the pumping radiation can
penetrate to its active region. Of course, if the top side metalization is not
needed for other purposes (e.g., testing prior to mounting on the base), then it15 can be omitted altogether, thus obviating the need to ~orm an aperture 23.
Optical pumping of the laser to achieve aligmnent is described in Canadian
application Serial No. 592,331 filed on February 28, 1989 entitled "Method of
Making an Article Comprising an Opto-Electronic Device and an Optical
Waveguide Coupled Thereto".
The fiber lS is optically coupled to the waveguide 14 by means of a
pair of tanclem V~grooves as shown in FIG. 10. A relatively narrow V-groove 50
is aligned with the optical axis of the waveguide 14, antl its size is adapted to
receive the bare portion 31 ot hber 1S (FIG. 1), whereas the larger V-groove 52
is axially aligned with groove 50 and its size is aclapted to receive the coatedportion 33 of fiber 18 (FIG. 1). The V-grooves are anisotropically etched by first
partially etching the larger groove 52 while the location for the narrower groove
is masked, then removing the mask and completing the etching of the larger
groove and the narrower groove simultaneously. The technique for forming the
V-grooves is described in Canadian application Serial No. 592,332 filed February28, 1989 enti~led "Method of Making an Article Comprising a Tandem Groove
and Article Produced by the Method".
The optical subassemblies described above may be completed, as
shown in FIGs. 11 and 12, by providing a lid 70 which encloses the various chipsmounted on the base 10; for simplicity, only a laser diode 92 and a photodiode 94
coup~ed by a waveguide 80 are shown. For hermetic applications, the lid is sealed
around its periphery to the base. To simplify achieving hermeticity, the fiber 18
~:'
1 3~q ~ 57
- 7 -
does not penetrate the herrnetic enclosure. Instead, a silicon fixture 76 has a
V-groove 78 which is aligned above the V-groove 50 in the base 10 so as to form
a channel to receive the fiber. The channel serves to guide the fiber and couple it
to waveguide 80 which extends into the hermetic enclosure. Although a notch
5 could be formed in the lid to accommodate the waveguide 80, in practice the
sealant used to form the hermetic seal is sufficiently maleable to accommodate the
waveguide without the need for a notch. In gene}al, the fixture 76 and lid 70
could be a unitary piecepart, but preferably they are separate, as shown.
As shown in FIG. 12, the lid 70 has a dimension parallel to the
10 base 10 which is shorter than the corresponding dimension of the base so thatleads formed thereon protrude from under the lid and allow electrical access
thereto. Only two sets of such leads 73 and 75 are depicted for the purposes of
illustration.
Moreover, the lid 70 may be utilized to provide an additional
15 significant feature of the invention, that of optical and electrical isolation of chips
on the base 10, as shown in FIG. 11~ For optical isolation at long wavelengths
(e.g., about 1.1-1.6 ~m), the interior surface of the lid is preferably metalized (not
shown); in practice, the silicon is pr~eferably oxidized before the metal is
deposited. At shorter wavelengths (e.g., about 0.7-0.9 ~lm), metalization may not
20 be required, since silicon absorbs light ~t those wavelengtl1s. In either case, the
lid 70 is provided with a pair of separated cavities 72 and 74, which are adapted
to receive the laser 92 and photodiode 94, respectively, when the lid is in place.
'I'hus, the devices are sepnrated by segments of the lid (such as 77) which
electrically and optic;llly isolate the devices from one another.
It is apparent that the lid serves multiple purposes including:
protecting the chips duling molding operations associated with encapsulating thesubassembly in a package; electrically and/or optically isolating chips. In
addition, it can be used to contain a conforrnal coating in ~he cavities for thepurpose of passivating the chips, if necessary.
In addition, the base 10 (or the fixture 76, or both) may be provided
with V-grooves along the parallel edges thereof, as showa in FIGs. 12-13, to
accommodate guide rods 90 which may be utilized for plugging the subassembly
into an e~uipment frame or rack. Of course, the guide rods would thereby enable
the subassembly to be automatically coupled to fibers (such as 1~) which are part
35 of the frame or rack equipment. The subassembly may be used with a base on
which any optoelectronic device is mounted (with or without a lid) and is
;
8 1 30q 1 57
optically coupled to the fiber, it is not limited to embodiments in which the base
carries an ;ntegrated circuit.
In FIG. 12, the V-grooves 100 are formed along parallel edges of
base 10 so as to accommodate the rods 90. The latter rnay be affixed to the base,
5 or may be part of an equipment frame. Alternatively, in FIG. 13 fixture 76 is
made wider, extending to the width of the base. Parallel edges of the fixture and
base are etched so that, when assembled, the etched features form V-grooves 100
for rece;ving the rods 90. From a procçssing standpoint the FIG. 13 design may
be simpler to fabricate because the FIG. 12 design entails etching from both sides
10 of the base with consequent need for front-to-back alignment of masks.
It is to be understood that the above-described arrangements are
merely illustrative of the many possible specific embodiments which can be
devised to represent application of the principles of the invention. Numerous and
varied other arrangements can be devised in accordance with these principles by
15 those skilled in the art without departing from the spirit and scope of the
invention.
