Note: Descriptions are shown in the official language in which they were submitted.
1
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Description
- 1 -
Elcotriaal circuit arrangement for tranaiormation of
magnetic field energy into alectrioal field energy
The invention rolateo to an electrical circuit
arrangement fc~r tran~fc~rrn~rt.lum ut magnetic field energy
into electrioctl field energy having at least one rirst
rnr_c~yy-~~u.cagr~ element for magnetic field energy, a
second energy-storage element !or AJ r~~fi.ri c:~ 1 f Lrld
~suwLgy. an active semiconductor element and an
electrical 'witching P1 amanfi, wTrlc:li c:dn d~saume at least
one first and one second switching state, which are
cannerted rrt nnP another in ~ucar d way that in the
brat switching state of the switching ~lom~ent, tt,R
ma7netlr field ~ner~y eau be Stored in the first
onQrgy-storage element, and in thA Rwc-.arui ~wiLuhilzg
:~ I.rr l_~ ut the switching element, the magnetic field
energy oan ba transform~d from thA fir:~l: rue~yy-atoraQe
element, being pa'sed via the aotivs semiconductor
e1~ment, to tn~e aP~onri ~~rrr,ryy-~l:orage element for
electrical field energy.
p wr:~krm5~ u.~ ouch known electrical circuit
nrranqemcnta for trans>aarmation of m~yrre~lc: field
Rn~r~c3y lrrLo electrical field energy is, in particular,
the octave semiconductor element : cm Llue one hand. the
active acuclc:urxJuctor element is subject to high voltac~a
fluctuations in the fnrwar~l ~lir:oction during each
rrcdLgy transformation process, and thRRR Vul~ar~o
3U fluctuations area crt d~~rzoximately the name magnitude as
the input voltage of the circuit arrarcyement. On the
other hand, thrt dc:Live semiconductor clement should ha
able to resist voltages of y Lu several timco the
input. vnll_dyes of the circuit arrang~ment in thA rrvrsia~t
direction. In the process, elm active semiconductor
r.lducant is aubiect to a high alt~ernaring 1uW 1 between
the forward St~tR end 1.11e rCVer'e State. z~he power
capacity of the active semicon~9mnfinr tslement thus
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- 1a -
cvn~ide~~dLly limiLe~ the gawer capacity of the entire
circuit arrangQmont.
A3 a rule, conventional active aomiconductor
a1 ~mr~nl.a are Ntudu~:ml from silicon 3i. These have the
disadvantage that
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PCT/DiE96/03G03 - 2
h1 gh reverse voltages can k~e ac;l~ldvd~i urrly Ly m~cana of
correspo»di.ngiy thick somiconductor function layers i.n
L1're au~tive semiconductor clement. liowove:r, thick
semiconrlcac.:r, ~r ~nnnt,i on 1 Hytara lidvd Llle di3advantage
that they have h:lgh dynamic switching lossms. The
dynamic ~wi fie~:hi ng 1 ny~~:~ c~c:c:ur y~iwlc~minantly when the
active semioonductor ~loma~nt changes Pram the rPVer.sP
aLdL~s to the forwnrd state and vice versa, in
particular due to the 1'~rm~rri~n ancS dissipation of
minority and majority cnrriorc. The dynamic switching
losses result 1 n rc~rrR~pnr:cj i coyly lri~lr thermal leases,
which can lead to destabilization of thQ active
Semi nnnr9ur:l.c~ c' rlc~tu~srtL . Ftxtthermore, the maximum power
loon Which can be dissipated from trie artivP
semiconductor element limits the 3witehing froquency of
the switching element of the ri r~mi 1- ~rranyerudirL, acrd
thus it3 power capacity, owing to the maximum
temperarurR that. t.hr. ~c:Liv~ ~~nticonductor element can
withstand. The first energy-storago element to the
~n msgrmt.lc: Lield energy and the aecand energy-storage
oloment for the electrical fiel~t AnArgy c:nrr k~~
ties~.~mvl, in particular, to be inver3ely proportional
to the clock frequency. Th~i r ply~iua~l size becomes
correspondingly omallcr for higher ,switching
frequPnr,i wR _
WO 97/01209 disa.loc~s a converter having
least onA Rwi t.c:h 1 rcg cl~sm~nt and one diode, with th~
diode being compos~d of 5i~.
Th~c invention ia~ based on the ob~wct of
specifying an e~ar,t-riral circuit d~rangemant for
tranaiormation of magnetic field on~rgy into elertrir~.~1
field ~enerqy, wh i c:lc nllrrwa higher switching
frequencies, and thus a smallQr physi~~1 aiz~, in a
cost-Ai°'fant:1 vr_ urdmrmt .
Tho object is achieved by t:frr_ ~sldotrical
ni rc:ulL arrangements specified in claims 1, 5, 7 and 9,
~tnd by the electrical c: i rc:m 1 1. diranqementa used
dc:~~rrdinQ to claimo 15 to 20.
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'1'he sreri a1 fiaatnr~! 1 n r_his ca3e its Llidl. ~lrrs
semiconductor material of the active s~miconductor
elemPnr f'1?!~i fl fl t'ilCt'~y ~djJ crL at 7.eaat 2 CV and a
breakdown field strength of gt lAaRr. ~~10~5 V/c:m. Iii
3 thin cane. the active samiconduator element can be
connectQd in parallel withn»r any furl.tm~ dciclili~rr~al
meaaureo t7incc at lo3~t one of th~ active semiconductor
elemenr.s haR ~ peall.lve Lmup~rature coefficient. The
active semiconductor element ~.s, in particular, i n r.hP
1O Lurm ut a diode. prefarably n 3chottky diode.
Uno advantage, in particular of f»rthwr ciralyr~
variants of the clcatrical circuit arrangement
according t o zhA i nvant i ~n i a l.lid L Llid
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comiconductor material of th~a ~rti ve semic:ur»luuLvr
e~.l.dm~uL ~:ontaina silicon ct3rbida, gallium nitride or
diamond.
Onc advantage of a furthQr elerrric:~7 c:ltc:uiL
arranr~~manr rrc:c:u.ce3ing to the invention is that thra
semiconductor material of the act iva rrr,rnlc:~melwtvr
~1 rmruL ~oiitaina Silicon carbide and, in particular,
has 3n energy gap of abnttt 3 ~V nru~ a breakdown field
strength of about 25*10~5 V/cm.
lU Gno advanr~gP crf a tuither electrical circuit
arrangement according to the invention is that the
samiConrinc:r.r~r~ crrdlerial of the active semiconductor
elemcrit contains gallium nitride anti, lrr ~rarticular,
has an euet~yy ~Ir~p of about 3.2 eV and 3 breakdown fiQld
strength of about 3010~5 v/c:rn.
One advantage of a further olectricai c.ir~W fi
arrangvmQnt 2oG~rriinc~ ~u the invention is that the
semiconductor material of the active :aRmi c:c~riciueavr
clement contains r9 i ~urmrtl and. in particular, hac an
erierqy gap of about 5.5 eV anti a Lteakdown field
strength c~f dLuut 104*10~5 V/cm.
The fact that the ~rnPrQy gt~p v1 the respective
RPTTrlc:mreluctor material of the active semi .rnneiuc:~ut
clement of the e7.Rrari c:dl circuit arrt~ngoments
according to the invention is high i.n r:cuu~dti~run with
silicon 2dvantay~uusly means that thra active
semiconductor clement has high r-htarrrndl stability. The
aCtiva :~r_mi~:vnductor elcrnont thus remains Cully
functional and in a stable npr~raLinr~ State evEn at high
npr.rw~ing temperatureo. Furthermore, rhP elec;l..civdl
circuit arrangr~menr, s ac:c:u~JinQ to the invention can
~1 Hc~ Le operated at high operating vo1 tHyda Jue to the
tact that 'thR rw~jrrrvtive semiconductor material of t.lm
active semiconductor elQm~ent his' a breakdown field
strenc~rh whietr is high in comparison with s~ 1 i c:cm. In
consequence, the elR~i-.r~lc:~l circuit arrangemQnt
aecorrii try lv the invention can also 2dvrrrWagevusly be
operated as a pnwar c:ltvu3.t with high reverse voltar~~g.
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.i n p~rr.i nul ar, the tclylr Lteakdown field
strength allows the semiconductor malarial xhi~knASR of
the ac'a,ivr. :~Cmic:uwluc:;tur element to be redueed. In
consequence, the dynamic anc~ rhrrnnrrl luaaea in the
a~:tive semiconductor element are advantageously
reduced. Un the one hand, chi ~ sc:t.iv~s aemicanductor
elemsnt is 3ub~cct to reduced loads, and on the other
hand the Rwi rnhi ny tLwdudric:y rrf the atditchinq element
in the electrical circuit arrangement pan hp increased.
a.ct A ti i ytret switching frequency allows, in particular, the
components, preferably the first Pnarc~y-:~t.utwy~ ~l~ntant
fur magnetic field energy and the second energy-storage
clement for alertxir~a1 fir.ld eudigy to be designed to
be conaidcrably omullcr. This is associated, firstly,
with an i r~c:rrrra~r irr l:he power capacity of the overall
electrical circuit arrangrsment. Secondly, thR phyr~ic:dl
rsixr. uL Llue electrical circuit arrangement is x~dueed.
A particularly adVantarlarn~R CdaLute of one
rrnk~udlmrsuit c~ the invention 1~ that thA active
~U semiconductor elemRnr i:~ ~ dlude or. in particular, a
Schottky diode. Sohottky diodes having a somiaonrimct.cm
material wir.h charael.et'i~Lias cvrreaponding to those
mentioned above have considerable ac9varrt_ac~ds. the
schottky clicrde du~ra not need to be dcratod, or requires
only minor derating, at lR~rit. wil.h regard to the
t.rcamrioal characteristics. Tho revers~ vo~.tag~ of the
Schottky diode is hirlh rnc~uylu for the electrical
circuit arxanqemcnto according to the invr~nt.ium to be
used Qven at high uNdiating voltaqea. On thQ other
hand. the oomiaonductor-metal y.m~r.i~n in 4lcd 9chottky
diode can hr c3d~igned to be thin doapite the capabili.r.y
to with3tand high reverse voltarlPr~, su that the dynamic
1 nrsar.5 are low even when the switchinrl al rrn~mL is
operated at high swit~hiny rtequencica. This allows the
?tS advali~ageoua charactcriotica of Schottky diudda to be
used as act iVP! ~srmiuutductor clemerito in the elQCtrira 1
~:ircuit arrangement according tn rhr: ilivention, even tit
high ~prraLiry voltegea and at high ~wiTChing
frequencioa.
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In tur~ti~=' eWuciim~suts of the invention, the
circuit arrangvm~nts according to the i nvant.i ~n rrt~r.
u~~scl in a step-up controller.
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otop-down controller, torw2rrcl rnnvPrl:Pr or jJUWCL'-Lnc:l.or
c:c~mLic~ller circuit.
~'urthEr arlvsnragrc~u:~ ~sritbadimenta of the
invention are speciti~d in the apprnpri at.r dC~rdtli.lEl'lt
claj.mR .
The invention will bQ Qxplalnati i rt tuc~ctr eletail
i n Llie fcrllowinc~ text with roference to exQmplary
embodimwnts which are 17.1n:atr~t.rci .lu Che figurCa, which
are described briofly below and in which, try way of
example:
FIGURE 1 ohowa an electrical circuit ~rr~nyetu~srtl
aur:rrZdinQ to the invention for
transformation of magnat.i c: tldld energy into
dlcctrical field energy,
7.5 FIGURE :~ shows an ill mt.r~t.lmr of energy gape with at
leerat 2 cV for semiconductor materi a1 s cat
the ~c:Livr~ semiconductor elcmont, with, by
way of example, a function r.c~ a umtallic
S~t~c~l.Lky ~untent.
FICURE 3 shows an illust.ratinrt ur breakdown field
strengths of apt toast 510~5 V/cm fnr
samirondunrnr materlala in the activo
semiconductor olement,
FIGUR» 4 shcwa a Rt.~p-ry u~ntrollEr circuit having an
2~ clcctrica.L circuit arrangRmrrr~ according to
rnrr Lmvr<srWiun,
FIGUR>J 5 ohowa a stop-down conrrnlldt circuit having
au electrical cix'cuit arrangQment arr:c~ri.iitlg
to the inv~entinn,
1~TGURE 6 Show' a forward-convQrter ni rauit ttavin~t an
Qlectric:~1 c:l~cuit arrangement according r.n
the invention, and
flVUFcE 7 R?~c~w~ ~t powCr faotor controller caiouit
having an sler~rric:~l circuit axrangamEnt
acc;c~tding to the invention.
By way of Qxampl~s. Figure 1 ahowc an electrical
circuit r~r~r~ngEment G according to the lm~ention for
tranoformation tN of rndyicetic f field onergy M into
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electrical field enere~y E. The elQatrieai circuit
arrangement G is a~.y~1 i ~~i,
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in particular, with the input vr~ltagR IIF and has ti 1.
lR~al. urrd rirst energy-etoraqe elemCnt L for magnotic
fiold enorgy M and a a~cnnd AnRrgy-aLutarge element C
for electriCt~l fiold energy J;. t'urthPrmora, tE~r.
e~.ectric.al ni rc:u i 1. d~~angement G has on active
semiconductor clement D and an raloetrirat ~wi tc:Trlry
AlRmpr~l. S. The electrical switching clement s may
naaumo at hart one first anti ~nA rsruutici switching
~Cate 31 or 32, reapectivCly. The first energy-storage
elwmont L, the second Rnrnyy-sLuraqe element C, the
,active semiconductor elcmont D and the clectrj.ral
switchi ng ~1 rrririW S art connected to one another in
such ti way that in th~ first switching sfi~l.r. S1 uL the
Rwitching ~leruerW 9, the magnetic field onorgy M can be
stored in the first energy-st~rnyr~ dlement L, and in
t.hr. sduund switching state 82 of the switching Qlsment
S, the magnetic fiRld rnrryy M can be transformed from
the first erierqy--OtOrago element t0 thQ .BeCOnt.1 Rnr.ryy-
storagQ Qlement r. fc~r.~ dld~:trical field enorgy 1;. The
energy flow which rosults from r.ha t.rwr~tvrmation of
magnetic fi r.1 c1 dciergy M into electrical field onergy E
is passed vii the active ~amironductvt~ dlement D. In
rhiw c:dse, the active aemiaonductor olsment D has. irr
particular, a forwa.r, d ci 9 rdc:LlGn and a rcvorae
direction, thuo allowing transform~ati~n ur cnagnetic
field energy tH i rmu rslectrical field onorgy >L in thQ
forward direction, while the Qlectr.ir~.a1 Lidld energy >r
stored i n t.lm second energy-otorage element r_. rannc~l.
react to the first energy-stnr~gr_ dlrrm~nt h owing to
thA rr.vdise direction.
In the Qxamp7.a i n Fl~ura 1. when the switching
alrrnHiiL 3 is in the first awltching star.a S1, a current
I1 fed from rhr liiput voltage UE flows through The
Lirst energy-otorage atoment L, ~r~ ~ iesult of whivh
magnQtir field ene~c~y M is built up in this elemwnt..
The input voltag~ Ul=: may hP Pi Llirrr an AC voltage or a
UC voltadP" tnllt~tn the switching element S rhangrb ~u the
3CCOnd switching ~t.a~d 32. the curr4nt I1 ins
1 nt taw u~rted.
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whioh results in a currQnt 12, which j~ =pd at least
L~um thG first energy-atoraqe elcmcnt L and tlowc via
th4 active semicondu~ctc~r e1 amAnt. D, .Lm its forward
direction. The current I~ tlowc into the second enerc~y-
stor2r~P a1 amAnt. C: w?ieL~ i~ ~G3ult3 in
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electrical field enPrc~y F h~ing built up, .i.it NdzLi4ular
in the form of the voltage UC.
ps h~~a ~1 rr:ac3y hddm aliown by way of example in
Figure l, the first enorgy-storage R1 Rme~.r~r L lm um
rmLucli~atllt of the invention is preferably an induativo
element, for example a coil. Iri 2 frrri-hwr rmlmdlnmtil, of
the invention, thQ ocaond onorgy-storage element ~: is
pr~ferably ~ rap~ni i-. i vr. ~lmu~nt, for example a
oapacitor. In a further embodiment of thR invPnrlnn,
~.n th~~ r-le~c:t_ti~:al switching element B is prcforably a
acmiconduator switching element, for Ax~mFrlr ~ .Cldld-
~tfect transistor. In a further embodiment of the
inv~ntion, at least onr~ fmrtair_r, iri particular
identical, active semiconductor element D' is connected
in paral 1 a1 wi i.fi t.lm dc:t_ive aemiconductox element D.
Farallcl aonnoction is advantageously possible wirhrnH:
any Lutt.hez additional measures, oinco the aativra
s~omiconduator .lenient T, or D' , whi ~f~ is Vd~c~ribad
fu~wlm~ in the followirzq text, hao a positive
;tU temperature ca~ffi~iant,. Tn paL~Liaular, this element i3
in the form of a diode, pretexably a Schottky dj aria.
'fhe i nvRrtt 1 nn will be deSt;t lLed in more detail in the
following text with reference to rhea c:c~nyur~enta
mentinnad ray way ~t example here.
As is show7"~ by w2~y nf. axHrnpl~r in Fiqurea 2 and
J, t_lirs aemicvnduator material of the act ivP
semiconductor element D 2ornr~ii rty Lu the invention hat3
an energy gap VB of at least :2 ev, in ela~rrnn v~lt.a,
and a bre2kct~wn fl~slcl at~:ength CK of at laast
JO 5''10~5 V/cm, in volts par r..AntimPtre. Tlid "10~5"
nataric~n lir this cane correopondo to the notation
"lE+5".
In figure 2, by way of ~xample, the Pnr.tyy gap
VB of thQ semir~ncW o:t_r.~t materiel of the active
33 ;~dmiconductor element D is shown in gymtrc~liu form.
according tn I.hr_ invention. to be at least 2 eV_ The
energy gap V8 is in this case 1-hr. e~mrgy difference
bP~WRPr1 Llm energy level of the valwncy band ~:v ant! The
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onorgy level of the conduCtinn h~n~1 >rC. The euet~y
ldv~sl of the E'ermi level i~ ~l~o ohown, for assistance.
The illustration is Fir~urR ~ i :~, try
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way of example, rclatod to 3 ~Bemiconductor junction rn
a m4taliia snhnttky c:wW dc:L in the direction of tho
ordinate . In Figure '.~' , by way o= caxample, r. hA hrrr~ kt3uwri
tl~ld strength EK of the oemiconductor matwrial of the
3etivc semiconductor elemRnt f) 1~ shown in symbolic
form, according to the invontion, to be at least
5*10~5 V/em. Ry way crt e~xdritple. the abscissa of the
illustration in Figure ;i shows valu~as of dnri nc~ i rr
1/cm~.'~ crt elm semiconductor material of the active
semiconductor wloment u. Th~ numerirwl deLdils fcr this
dnFri ny rdptesent only levels chosen by way of ~xample.
In various Pmt7c~ci i mews of the electrical
circuit arrangement C according to the invention, thr.
somieondurtnr material vI ll'm active semiconductor
element D contains, in particular, sill c-.nn c:Ht~t~icA~ 31C,
gallium ni Lc~ld~s Ga~N v~- diamond C diamond, that is to
nay carbon with a r91 amnnci caystalline network
~rl~.Lwc:~utt, with the semiconductor matorial having ~n
onorgy gap vJi of at least ~ rv died a breakdown field
r~trangth CK of at least 5*lU~b v/cm.
In ,furthAr cirslyic variants of the invontion,
the semiconductor material of thR antive semic~rlciu~tor
elemenr n c:c~cWaims, i.n particular, silicon carbide Sic,
gallium nitride GaN or diamond r di arnc~:rd.
If the 'emiconduotar matorial of the ant.lve
semiconductor elemPnr. ~ lc~ vne embodiment of the
el~svtriaal circuit arrangemQnt V aecarnii ng ~u the
invantinn nr in eerie design variant of thra invanti~n
contains oilicon carbide Si.C:, then, i n Narticuler, thin
has ~n diiwigy gap VD of about 3 oV and a hra~kdown
field rstrength ~;lc of abour. 75"10~~ V/cm, as i3 shown by
way of r_xdut~-rle in 1:'igures 2 and 3.
It the semi c:cm~iu4tor material of thw active
arsmivonductor elomont D in on! Amhndim~snt of the
electrical c~.ir.cuit a~tangement G according to the
invention or in one dQSign varLarrl of the invention
contains c~~r1 lluirc nitride GaN, then, in particul err, ~lris
has err enorgy gap vt~ of dh~out 3.2 eV and a breakdown
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GR 97 P X943
..
field otrcngth EK o~ about 3U"~lU~5 V/cm, aR 1~ shown by
way ~f ax~tn~ld in Figturea 2 and 3.
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GR 97 P 3943
- a~ -
If thQ a~miconductor m2stPrial of the t~c:~lv~s
r~rmic:umclu~tcrr element D in one ombodim~nt of the
electrical circuit arrangPmant: G dur:ordi.nQ to the
invention or in ono design variant of the 1 nvRnt: ! cm
b contains dismnnci C: cildmurml. then. in pnrtieular, thin
has an energy gap VB of about 5.5 av and a hrr.~kciuwss
fir.l.d 'Lteng'th EK of about 100*10~5 V/cm, as is
likewiaQ shown by way or eXamFslR im Flyutea 2 and 3.
Dy way of example, Figures o tn ~ shnw
J. t) advarstageous ri rrni t. dttr~rir~cmenta in which the
invention is used.
Fl,yurc~ 4 shows, by way of example, a stop-up
controller circuit H having an Rt~nt.t~lual oirouit
arrangecuess~ f3 accoa:dinq to the invention, to which, in
15 particular, an input v~trag~ tlE1 is supplied and which
lsr~a an output voltaqc U111. Th4 stop-up cantrnlt ar
circuit H has, fc~r~ exdm~la, a coil L11, a field-effect
tranai9tar S11, a semiconductor di~cia nl.l, in
particular a Sc:hc~L~kyliode. arid a capacitor C11. Tha
20 ooil L11 iri connected in series wi t.ts ~lsc input voltage
tTFl. Tlue~ field-effect tranoiotor S11 and she capacitn.r.
C11 arQ arrangRd cinwnstream tt~uu~ the coil L11, in
paiallel with the input voltag~ U~:l . The sAmi c-.ariduc:Lui
diode U11 is arranr~rci iss Llw forward direction betweQn
25 the field-effect txansoistor s11 and t.tl~ c:dpa~citor C11,
ind 1 n ar~~t~s~ with the coil L11. According to the
invention, thw semiconductor dinrie~ D11 la composed of a
:~e_mic':unductor material t~ccording to Lhe invent i.nn . Wtmu
the bald-~tfQCt tranai at.c~r S11 is switched on and oft,
30 magnetic field energy is transformed rr~m the cell L11
into thQ cara~ir.nr C11 rsa electrical field energy.
Ciqurc 5 ehow~c, by way of Pxampl~s. a step-down
rr~nrrnl ldt oircuit T having an oloctrical ri rc:w i ~
arrangement G according r.n thr invention, in which, in
't!5 partic;ulai. an input voltage t)E:~ is supplied anti wlsic.,h
has an output vnt rac3r. t)A2 . The step-down controller
c:itr:uit T has. for example, a coil L21, a Ii~sld-effect
transistor S?.t, H ~maiconductor
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CR 97 P 3943
- 10 -
diode D21, in particular a Schottky diode, and ~
L:dj.7dG:l~uL C21. The field-effect tranai3tor S21 i~
connected in series with the inner v~1 t:egtr I7E2 . Tlr~s
semiconductor diodes D21 and the capacitor C21 arQ
arranr~Pd i n the rrvr.,r.~a~ di~d~:Liori downstream from the
field-effect translator Sll, in parallel with the input
VUlLdy~ UE2. Tho coil L21 is arranged between tha
semiconductor diode U21 and the oarari,r, ~r C:~1 , ~nc3 lu
series with the field-cffcat translator S21. According
to the inventlnn, 1-hR :,rmlc:umclu~Lor diode D21 is
composed of a 3emivonductor material according to the
invanfii~n. Wlm~ ~i~rs field-effcct transistor X11 is
owitahed on and ott, magnetic field energy i~
transfarmad rruui l.he flail L21 into the capacitor C21 as
l~ electrical field energy.
figure 6 shows, by way of example, a tarward-
eonvertAr c:i rc:~~t I. Dtn1 lidvirig an electrical circuit
arrangement C according to the invention, to which, in
particul ar, xn icrpuL vull.age UE3 is supplied and which
has an output voltage 17A3. In this c:axr., r~ ~tlmdiy
c:irc:uiL DWl and/or n~ secondary circuit DW:? of the
forward-converter of rr»i r. fivll have/has l.lie alectiical
circuit arrangement C according to the invention. The
primary circuit >7m1 and t.?~r. 5dc;uldary circuit DW2 are
c5 preferably docoupled from one another by mR~nx m L a
transformwr T3. Tkm primary circuit DW1 hac, for
example, a first capacitor C31, a lEirRt r:c~ll L31. a
Llt~L aemicvnductor diode D31, in particular a ~chottky
diode, and a first fielri-Pff~c:t. ~Lamistor 331. As a
rule. the fir3t soil L31 is a winding elemAnr ~t the
primary coil wi nc91 ry, in particular a ao-called
demagnetizntion winding, of the transformer T?l. Tlres
secnn~iary c:lLUUit DW2 has, for example, a second
semiconductor diode U32, in part.i c:uldt ex 9chottky
~5 diode, a Ll~ird Semiconductor diode D33, a second coil
L3~ and a second sansei tar C:32 . When the field -effect
t.L'dtl'Sl9tOr S31 is switched on and off, magnotia fi p1 c3
energy is transfnrmrd rtwn the first coil L31 into the
fi~:at capacitor C31 as electrical field PnPrc~y.
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rR 97 P 3943
- 1 'I -
The capacitor C31, tho first rvi 1 T~31 which is
c:r~rurdc:t_wcl in the reverse direction and in aeries with
the first semiconductor dio~la O~1 , drml Llle first
field effect tranaiotor Sal which is connected in
series wi th t.hr_ ptiuraiy of the tran3former T3 arc
arranged in tho primary circuit uWl, in raraltr~l wil-,h
the lripuL voltage UE3. When the field-effect transistor
S31 is awitchod on and oft, mac~nPr. i r-.. f i rlc3 dm~~y is
transformed from the firot coil L31 into the first
lU capacitor C31 as elRrr.ri~~rl flrld eiZergy.
The third semiconductor diod~ u33 is connected
in rhA :sr:c:cmcidiy ~:ircu~.t DW2, in eerico with the
secondary of the transformer T3 and in tt~r. Lutwxr~l
directive. T!m second semiconductor diodo D32 and th~
second capacitor C32 are arrsnyr_d, in the reverse
dizectivn, downstream from tho third semiconductor
di.oda~ L~33, i n par~lldl with the secondary of the
transformer T3. The second coil L32 is arrangari t;~r~l.wddm
thQ seronci ~tarnlr.:umiuvtur diode D32 and tho second
eApacitor Cj:t and in serj.a~ w i. t.ti the third
sE?rmi c:nrrduc:Lur diode D33. When the bald-effQCt
transistor S~1 is awir. r..hpci ~n and vrt, rnagnetic field
tstWlS~y is tran3formed from the second coil L32 inr.n fi,hr:
second capacitor f.::~9 a:~ c~lCC:Ltival field energy.
Tho first sQmiconductor diodes 1731 d1~1C1IVl the
sQCOnd ~Pmi r:urrciuc:tvr diode D32, but preferably both,
are, according to the invent i, Win, c:mn~rvsed of a
sami~:rmdu~Lvr material according to the invQntion- Thr.
third semiconductor diode ~~:1 mdy likewise be eompoaod
ur a semiconductor matorial according to rhR inventivr~.
le'igure 7 shc~w:~, Ly way of examples, a power
Lxcaor circuit fFC of an elraetrlcal cirr» i t. d~iangement
accord~.nrl t.c~ ~tr~s invention, to which, in particular,
an input voltage U1;4 is suprl i rd acid which hao an
;i5 ourn»r. voltage UA4 . The power-fsetor circuit P~'r i s
also roferrcd to, in parric:ulat, as a so c~;llod "powQr
far..rnr s;urrtrvller" circuit. In this casA, ~n d~cCcrnal
c3aeade circuit Pfr ~nci/uL an internal caaoadv circuit
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GR 97 P 'i943
- lla -
fI of the pow~r-factox circuit PFC has thA A1 art-.ri aal
ri r~mi t-.
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GR 97 P 3943
- 12 -
arrangemQnt G accordinr~ to r, h~ i nvPnr.1 on. The exteftictl
cascade circuit rA has, for examplo, a first coil L41,
a first fielel-effar~t fi.ranyi al_Ut' S41 and a first
ocmiconductor di.od~ U41, in particular 2 Sr~hnrr.ky
!5 di c~cW . Tltw internal cascade circuit fI hao, for
example, a st~rcond coil L42, a seGnnr'1 aRmi c:nrvcW c:t_c.~t
diode D42, in particular to Schottky diode, and a third
semicondttCtor d~.ndR n4~. TT1H E:xl_dtttfll Ga3CadC circuit
fA and tho internal aascado circuit PI have a cnmmnn
rapac:i t.ctr C41. W1'iert the first and second field-effect
tranaiotors S91 and 59:G, respectively, are swi tc:h~ci c~ri
and off. magnetic field energy from the first soil L41
and magnetic field enerr~y from rhe~. Hrc:c~tttl u~il L92 era
tralzsformed into the capacitor C41 ao electrical field
13 ~on~rgy.
In the oxtornal cascade circuit F~~, the Lixsr.
c-r~t 1. L41 is ~:unnectad in aeries with the input voltage
UE4. Thw first field-affect transi star S41 dw1 the
C.djJdl:1'tUR C41 are arranged down3trctam from the first
au coil L41, in pare 1 1 a1 wi t:h t.lm iryut voltage UC4 . The
first semiconductor diode D41 is arrang~d, in the
foxwarA di rection. bel.we~stt the first field effect
tran3iator S91 and the capacitor C41, anti in seti~~
with rhr. flt~~t_ coil L41. When tho firot fiold-effect
25 transistor S41 i.s switched nn and ctLL, mat~natic field
dr~digy is transformed from the first coil L41 into the
capacitor c:41 as electriaa.l fi A1 c9 ermt~y.
In the intornal casead4 Circuit PI, the !~~~c:arid
coil L42 i.s c:nnnrc:l_eci t_~ thG common node bctwoon the
30 first coil L41, th~ first field-AffP~r transist~t~ S41
~tnd t_lm first semiconductor diodo D41. Tha second
fiold-ettQCt transistor s42, which is connected in
aerios with the third oamiconduator diodo D43 (which is
connected in the f~rwarc9 cilt~~tivnl , and the capacitor
3~ C47, arc arranged downatroam from the second aoll T,4~,
in parall a1 w i t.Tr Llt~ first field-effect transistor 541.
The second semiconductor diode G42 is arrangrd lm the
forward ditdraion between the second field-affoct
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~R 97 P 3943
- 12a -
trai'sictor S42 and tho capacitor C41, and in series
with the second coil L42.
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Tilts rlt 'S (,. ~dmluuJl3uc:l.ut tiiu~,id D$1 dll'ld/vx the
sQCOnd sQmiconductor diodes u4~ arQ/is, according to thQ
invention, composed of a semiconductor matorial
Flt)C:Ur'C.~illt~ ~.U Ltll~ ilJVt'_111.1C)11. TIC LtJit'C.~
'.it'JlLI.tC:Vl1(~UC.:LUt
diode D43 may likewise be composed o~ a semiconductor
111dLCt1d1 dtrC:Utllllll~ LU (_tltl 1JJVL-'IlL1U11.
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