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Patent 3066387 Summary

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(12) Patent Application: (11) CA 3066387
(54) English Title: MULTI-LEVEL HYSTERESIS VOLTAGE CONTROLLERS FOR VOLTAGE MODULATORS AND METHODS FOR CONTROL THEREOF
(54) French Title: REGULATEURS DE TENSION A HYSTERESIS MULTI-NIVEAU POUR MODULATEURS DE TENSION, ET PROCEDES DE COMMANDE ASSOCIES
Status: Deemed Abandoned
Bibliographic Data
(51) International Patent Classification (IPC):
  • H02M 7/483 (2007.01)
  • H02M 7/54 (2006.01)
  • H02M 7/86 (2006.01)
(72) Inventors :
  • SLEPCHENKOV, MIKHAIL (United States of America)
(73) Owners :
  • TAE TECHNOLOGIES, INC.
(71) Applicants :
  • TAE TECHNOLOGIES, INC. (United States of America)
(74) Agent: SMART & BIGGAR LP
(74) Associate agent:
(45) Issued:
(86) PCT Filing Date: 2018-06-18
(87) Open to Public Inspection: 2018-12-20
Examination requested: 2022-09-30
Availability of licence: N/A
Dedicated to the Public: N/A
(25) Language of filing: English

Patent Cooperation Treaty (PCT): Yes
(86) PCT Filing Number: PCT/US2018/038089
(87) International Publication Number: WO 2018232403
(85) National Entry: 2019-12-05

(30) Application Priority Data:
Application No. Country/Territory Date
62/521,227 (United States of America) 2017-06-16

Abstracts

English Abstract

Systems and methods that facilitate multilevel hysteresis voltage control methods for cascaded multilevel voltage modulators having a plurality of power cells connected in series and has any positive integer number of output voltage levels to control any unipolar voltage on the load of the voltage modulator, and transfer electrical power from an electrical grid via AC/DC converters or directly from energy storage elements of the power cells to that load. A method of operational rotation of the power cells of a multilevel voltage modulator, which ensures an equal power sharing among the power cells and voltage balancing of the energy storage elements of the power cells of the modulator.


French Abstract

L'invention concerne des systèmes et des procédés permettant l'exécution de procédés de régulation de tension à hystérésis multi-niveau pour des modulateurs de tension multi-niveau en cascade ayant une pluralité de cellules de puissance connectées en série. Grâce à un nombre entier positif de niveaux de tension de sortie, une tension unipolaire sur la charge du modulateur de tension peut être régulée, et de l'énergie électrique peut être transférée à partir d'un réseau électrique via des convertisseurs CA/CC ou directement à partir d'éléments de stockage d'énergie des cellules d'alimentation à cette charge. Un procédé de rotation opérationnelle des cellules de puissance d'un modulateur de tension multi-niveau garantit en outre un partage de puissance égal entre les cellules de puissance et un équilibrage de tension des éléments de stockage d'énergie des cellules de puissance du modulateur.

Claims

Note: Claims are shown in the official language in which they were submitted.


WHAT IS CLAIMED IS:
1. A multi-level cascaded voltage modulator connectable to a load,
comprising:
a plurality of power cells connected in series, wherein each cell of the
plurality of
cells comprises a of bidirectional switch and a storage element; and
a control system coupled to the plurality of cells and having a multi-level
hysteresis
voltage controller, wherein the control system is configured to cause the
plurality of cells to
output N levels of voltage on the load, wherein N is a positive integer
corresponding to the
number of power cells of the plurality of power cells.
2. The modulator of claim 1, wherein each cell of the plurality of cells
includes
a secondary winding isolation transformer;
a three-phase diode bridge coupled to the transformer and the storage element;
and
a diode.
3. The modulator of claim 2, wherein the bidirectional switch is one of an
IGBT
or a MOSFET.
4. The modulator of claim 2, wherein each cell of the plurality of cells
further
comprises an LCR filter at its output.
5. The modulator of claim 2, further comprising a CR filter at the output
of the
plurality of cells.
6. The modulator of claim 2, wherein the control system is further
configured to
cause the transfer of electrical power from the energy storage elements of the
power cells to the
load.
7. The modulator of claim 2, wherein the control system is further
configured to
balance voltages on the storage elements.
8. The modulator of claim 2, wherein the storage element is a capacitor.
21

9. The modulator of claims 1-8, wherein the control system including one or
more processors coupled to a non-transitory memory comprising a plurality of
instructions
that when executed causes the one or more processors to control a level of
voltage on the
load.
10. The modulator of claim 9, wherein the plurality of instructions when
executed
causes the one or more processors to control an output voltage level of the
modulator as a
function of the level of voltage on the load, a reference voltage and a
voltage error equal to
the difference between the level of voltage on the load and the reference
voltage.
11. The modulator of claim 9, wherein the plurality of instructions when
executed
causes the one or more processors to:
subtract from a reference voltage signal V REF a real feedback voltage signal
V REAL
received from a voltage sensor;
produce, by a voltage level estimator, an estimated voltage level signal,
Levels, using
a high boundary (HB) threshold of a hysteresis block, a low boundary (LB)
threshold of the
hysteresis block, and the voltage difference signal .DELTA.V; and
generate, by a switching pattern generator, a plurality of switching signals
based on the
estimated voltage level, Levels, and a state of the hysteresis block.
12. The modulator of claim 9, wherein to subtract from a reference voltage
signal
V REF a real feedback voltage signal V REAL, the plurality of instructions
when executed causes
the one or more processors to:
feed the real feedback voltage signal V REAL to a low-pass filter input;
feed a low-pass filter output signal to a negative input of a first summation
block;
feed the reference voltage signal V REF to a positive input of the first
summation block;
and
produce a voltage difference signal .DELTA.V at an output of the first
summation block.
13. The modulator of claim 11, wherein:
when .DELTA.V reaches the high boundary (HB) threshold of the hysteresis
block, the
plurality of instructions when executed causes the one or more processors to
set the state of
the hysteresis block to "1."
22

14. The modulator of one of claims 11 or 13, wherein:
when .DELTA.V reaches the low boundary (LB) threshold of the hysteresis block,
the
plurality of instructions when executed causes the one or more processors to
set the state of
the hysteresis block to "O."
15. The modulator of claim 11, wherein to produce the estimated voltage
level
Levels, the plurality of instructions when executed causes the one or more
processors to:
apply a clock signal to a clock generator;
count, by a resettable counter, a number of clock signals generated by the
clock generator
when one or more of the following conditions is true:
.DELTA.V is lower than the low boundary (LB) threshold of the hysteresis
block; or
.DELTA.V is higher than the high boundary (HB) threshold of the hysteresis
block;
increment, by a free running counter, a free running counter output signal;
apply the free running counter output signal to a second summation block; and
decrement a number of Levels at an output of the voltage level estimator when
both of the
following cases are true at the same time:
the signal .DELTA.V is lower than the low boundary hysteresis threshold LB;
and
the value of an output counting signal of the resettable counter is higher
than a
preset value of a time constant.
16. The modulator of claim 15, wherein when both the signal .DELTA.V is
lower than the
low boundary hysteresis threshold LB and the value of the output counting
signal of the resettable
counter is higher than the preset value of a time constant, the plurality of
instructions when
executed causes the one or more processors to:
set the output of a logic element of a level decrement circuit to True;
detect the output of the logic element with a rising edge detector; and
increment the free running counter, and thereby decrement an output level at a
summation
block.
17. The modulator of claim 1, wherein the multi-level hysteresis voltage
controller
comprises:
a low pass filter having a low-pass filter input and a low-pass filter output;
a first summation block having a positive input and a negative input;
23

a hysteresis block having a high boundary (HB) threshold and a low boundary
(LB)
threshold;
a voltage level estimator having a plurality of voltage level estimator inputs
and a
voltage level output signal Levels; and
a switching pattern generator having a plurality of switching pattern
generator inputs
and a plurality of switching pattern generator outputs.
18. The modulator of claim 17, wherein the switching pattern generator
comprises:
a comparator block;
a resettable counter;
a first multiplexer having a first plurality of input signals; and
a second multiplexer having a second plurality of input signals.
19. The modulator of claim 18, wherein each input signal of the second
plurality
of input signals represents an array of switching states each corresponding to
a one of
plurality of output levels for a voltage modulator.
20. The modulator of claim 19, wherein the plurality of output levels
ranges from
0VDC when all switching signals are false to a maximum output voltage when all
switching
signals are true.
21. The modulator of claim 17, wherein the voltage level estimator
comprises:
a clock counting circuit;
a level decrement circuit;
an enable and reset circuit for the resettable counter; and
a second summation block.
22. The modulator of claim 21, wherein the clock counting circuit comprises
a clock
generator, a logic switch, and a resettable counter.
23. The modulator of claim 21 or 22, wherein the level decrement circuit
comprises a
first logic element, a rising edge detector, and a free running counter.
24

24. The modulator of claims 21-23, wherein the enable and reset circuit
comprises a
second logic element, a rising edge detector and a third logic element.
25. The modulator of claim 24, wherein the first logic element is an AND
gate, the
second logic element is an XOR gate, and the third logic element is an OR
gate.
26. The modulator of claim 17, wherein when .DELTA.V reaches the high
boundary (HB)
threshold of the hysteresis block, the state of the hysteresis block is set to
"1."
27. The modulator of claims 17 or 26, wherein when .DELTA.V reaches the low
boundary
(LB) threshold of the hysteresis block, the state of the hysteresis block is
set to "O."
28. The modulator of any one of claims 17-27, wherein the load is in a
power
electronic circuit in one or more of an electrode biasing power supply for a
Tokamak plasma
reactor, an electrode biasing power supply for a FRC plasma reactor, a power
supply for a neutral
beam injector, a magnetron modulator, a klystron modulator, an E-gun
modulator, a high power
X-ray power supply, a mediumwave transmitter, a longwave transmitter, and a
shortwave solid-
state transmitter.
29. A multi-level hysteresis voltage controller for a multi-level voltage
modulator
connectable to a load, comprising:
a low pass filter having a low-pass filter input and a low-pass filter output;
a first summation block having a positive input and a negative input;
a hysteresis block having a high boundary (HB) threshold and a low boundary
(LB)
threshold;
a voltage level estimator having a plurality of voltage level estimator inputs
and a
voltage level output signal Levels; and
a switching pattern generator having a plurality of switching pattern
generator inputs
and a plurality of switching pattern generator outputs.
30. The multi-level hysteresis voltage controller of claim 29, wherein the
switching pattern generator comprises:
a comparator block;
a resettable counter;

a first multiplexer having a first plurality of input signals; and
a second multiplexer having a second plurality of input signals.
31. The multi-level hysteresis voltage controller of claim 30, wherein each
input
signal of the second plurality of input signals represents an array of
switching states each
corresponding to a one of plurality of output levels for a voltage modulator.
32. The multi-level hysteresis voltage controller of claim 31, wherein the
plurality
of output levels ranges from 0VDC when all switching signals are false to a
maximum output
voltage when all switching signals are true.
33. The multi-level hysteresis voltage controller of claim 29, wherein the
voltage
level estimator comprises:
a clock counting circuit;
a level decrement circuit ;
an enable and reset circuit for the resettable counter; and
a second summation block.
34. The multi-level hysteresis voltage controller of claim 33, wherein the
clock
counting circuit comprises a clock generator, a logic switch, and a resettable
counter.
35. The multi-level hysteresis voltage controller of claim 33 or 34,
wherein the level
decrement circuit comprises a first logic element, a rising edge detector, and
a free running
counter.
36. The multi-level hysteresis voltage controller of and of claims 33-35,
wherein the
enable and reset circuit comprises a second logic element, a rising edge
detector and a third logic
element.
37. The multi-level hysteresis voltage controller of claim 36, wherein the
first
logic element is an AND gate, the second logic element is an XOR gate, and the
third logic
element is an OR gate.
26

38. The multi-level hysteresis voltage controller of claim 29, wherein when
.DELTA.V
reaches the high boundary (HB) threshold of the hysteresis block, the state of
the hysteresis
block is set to "1."
39. The multi-level hysteresis voltage controller of claims 29 or 38,
wherein when
.DELTA.V reaches the low boundary (LB) threshold of the hysteresis block, the
state of the hysteresis
block is set to "0."
40. The multi-level hysteresis voltage controller of any one of claims 29-
39, wherein
the load is in a power electronic circuit in one or more of an electrode
biasing power supply for a
Tokamak plasma reactor, an electrode biasing power supply for a FRC plasma
reactor, a power
supply for a neutral beam injector, a magnetron modulator, a klystron
modulator, an E-gun
modulator, a high power X-ray power supply, a mediumwave transmitter, a
longwave transmitter,
and a shortwave solid-state transmitter.
41. A method of controlling a voltage supplied to a load using a multi-
level
hysteresis voltage controller, comprising:
receiving a real feedback voltage signal V REAL from a voltage sensor;
subtracting the real feedback voltage signal V REAL from a reference voltage
signal
V REF by
feeding the real feedback voltage signal V REAL to a low-pass filter input;
feeding a low-pass filter output signal to a negative input of a first
summation
block;
feeding the reference voltage signal V REF to a positive input of the first
summation block; and
producing a voltage difference signal .DELTA.V at an output of the first
summation
block;
producing, by a voltage level estimator, an estimated voltage level signal,
Levels,
using a high boundary (HB) threshold of a hysteresis block, a low boundary
(LB) threshold of
the hysteresis block, and the voltage difference signal .DELTA.V; and
generating, by a switching pattern generator, a plurality of switching signals
based on the
estimated voltage level, Levels, and a state of the hysteresis block.
42. The method of claim 41, wherein:
27

when .DELTA.V reaches the high boundary (HB) threshold of the hysteresis
block, the state
of the hysteresis block is set to "1."
43. The method of one of claims 41 or 42, wherein:
when .DELTA.V reaches the low boundary (LB) threshold of the hysteresis block,
the state of
the hysteresis block is set to "0."
44. The method of claim 43, wherein the voltage level estimator produces
the
estimated voltage level Levels by:
applying a clock signal to a clock generator;
counting, by a resettable counter, a number of clock signals generated by the
clock
generator when one or more of the following conditions is true:
.DELTA.V is lower than the low boundary (LB) threshold of the hysteresis
block; or
.DELTA.V is higher than the high boundary (HB) threshold of the hysteresis
block;
incrementing, by a free running counter, a free running counter output signal;
applying the free running counter output signal to a second summation block;
and
decrementing a number of Levels at an output of the voltage level estimator
when both of
the following cases are true at the same time:
the signal .DELTA.V is lower than the low boundary hysteresis threshold LB;
and
the value of an output counting signal of the resettable counter is higher
than a
preset value of a time constant.
45. The method of claim 44, wherein when both the signal .DELTA.V is lower
than the low
boundary hysteresis threshold LB and the value of the output counting signal
of the resettable
counter is higher than the preset value of a time constant:
a logic element output of a level decrement circuit becomes True;
a rising edge detector detects the logic element output; and
the free running counter is incremented, thereby decrementing an output level
at a
summation block.
28

Description

Note: Descriptions are shown in the official language in which they were submitted.


CA 03066387 2019-12-05
WO 2018/232403
PCT/US2018/038089
MULTI-LEVEL HYSTERESIS VOLTAGE CONTROLLERS FOR VOLTAGE
MODULATORS AND METHODS FOR CONTROL THEREOF
TECHNICAL FIELD
[0001] The present disclosure relates to power electronic circuits, and more
particularly to multi-
level hysteresis voltage controllers for voltage modulators and methods for
control thereof
BACKGROUND
[0002] Voltage modulators have been used widely for broadcast, medical,
industrial and research
applications. The most common voltage modulation techniques include Pulsed
Step Modulation,
Coarse Step Modulation, Pulsed Width Modulation, and hybrid modifications
thereof
[0003] These common modulation techniques have several drawbacks. For
instance, these
common modulation techniques are linear methods that require a proportional-
integral (PI)
controller with an additional feedforward loop in a control system to estimate
a modulation index
or duty cycle at every step of discretization. In addition, low frequency
pulsations of output
voltage usually occur in these common modulation techniques due to unbalance
of DC-link
voltages, variation in parameters of passive elements, and deviations of duty
cycles of series
connected modules. Lastly, there is a strong correlation between parameters of
the PI-controller
and load parameters in these common modulation techniques. Therefore, if load
characteristics
change rapidly and over a wide range, then the PI-controller is not capable of
operating efficiently
and fast enough to minimize a control error in transient periods.
[0004] Hysteresis is a phenomenon in which the response of a physical system
to an external
influence depends not only on the present magnitude of that influence but also
on the previous
history of the system. Expressed mathematically, the response to the external
influence is a
doubled-valued function; one value applies when the influence is increasing,
while the other value
applies when the influence is decreasing.
[0005] Among existing control techniques, nonlinear hysteresis band voltage
control remains the
simplest and fastest method. Beyond a fast response of a voltage control loop,
the nonlinear
hysteresis band voltage control method does not require any knowledge of
variation of load
parameters. However, the hysteresis voltage control technique for voltage
modulators becomes
increasingly complicated with an increased number of power cells connected in
series.
[0006] In view of the foregoing limitations, it is desirable to provide a
multilevel hysteresis voltage
controller (MHVC) for voltage modulators having any number of series connected
power cells
while providing very accurate voltage regulation in a wide range of load
parameters fluctuations.
1

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SUMMARY
[0007] The embodiments of the present disclosure are directed to systems and
methods that
facilitate simple and effective multilevel hysteresis voltage control methods
for cascaded
multilevel voltage modulators. In embodiments, a cascaded multilevel modulator
comprises a
plurality of power cells connected in series and has any positive integer
number of output voltage
levels to quickly, effectively, and precisely control any unipolar voltage on
the load of the voltage
modulator, and transfer electrical power from an electrical grid via AC/DC
converters or directly
from energy storage elements of the power cells to that load. The embodiments
are also directed
to a method of operational rotation of the power cells of a multilevel voltage
modulator, which
ensures an equal power sharing among the power cells and voltage balancing of
the energy
storage elements of the power cells of the modulator.
[0008] The embodiments presented herein may advantageously be used in a
variety of applications
in which voltage regulated modulators are employed. Examples of such
applications may include,
without limitation, power electronics circuits comprising: electrode biasing
power supplies for
Tokamak and FRC plasma reactors; power supplies for neutral beam injectors;
magnetron
modulators; klystron modulators; E-gun modulators; high power X-ray power
supplies;
mediumwave and longwave transmitters; and shortwave solid-state transmitters.
[0009] Other systems, methods, features and advantages of the example
embodiments will be or
will become apparent to one with skill in the art upon examination of the
following figures and
detailed description.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] The details of the example embodiments, including structure and
operation, may be gleaned
in part by study of the accompanying figures, in which like reference numerals
refer to like parts.
The components in the figures are not necessarily to scale, emphasis instead
being placed upon
illustrating the principles of the disclosure. Moreover, all illustrations are
intended to convey
concepts, where relative sizes, shapes and other detailed attributes may be
illustrated schematically
rather than literally or precisely.
[0011] FIG. 1 illustrates a schematic of a multi-level voltage modulator
according to
embodiments of the present disclosure.
[0012] FIG. 2 illustrates an exemplary multi-level hysteresis voltage
controller according to
embodiments of the present disclosure.
[0013] FIG. 3 illustrates an exemplary voltage level estimator according to
embodiments of the
present disclosure.
2

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PCT/US2018/038089
[0014] FIGS. 4A, 4B, 4C and 4D illustrate exemplary operation of an exemplary
voltage level
estimator according to embodiments of the present disclosure.
[0015] FIG. 5 illustrates an exemplary switching pattern generator according
to embodiments of
the present disclosure.
[0016] FIG. 6A illustrates an exemplary 1VDC rotation block according to
embodiments of the
present disclosure.
[0017] FIG. 6B illustrates an exemplary 2VDC rotation block according to
embodiments of the
present disclosure.
[0018] FIG. 6C illustrates an exemplary 3VDC rotation block according to
embodiments of the
present disclosure.
[0019] FIG. 6D illustrates an exemplary 4VDC rotation block according to
embodiments of the
present disclosure.
[0020] FIG. 6E illustrates an exemplary (N-1)VDC rotation block according to
embodiments of
the present disclosure.
[0021] FIGS. 7A, 7B, 7C and 7D illustrate exemplary operation of an exemplary
switching
pattern generator according to embodiments of the present disclosure.
[0022] FIG. 8 illustrates exemplary switching and Levels signals for an
exemplary seven (7)
level voltage modulator according to embodiments of the present disclosure.
[0023] FIGS. 9A, 9B and 9C illustrate simulation results of operation of the
exemplary seven (7)
level voltage modulator according to embodiments of the present disclosure.
[0024] FIGS. 10A, 10B and 10C illustrate simulation results (zoomed traces) of
operation of the
exemplary seven (7) level voltage modulator according to embodiments of the
present disclosure.
[0025] FIGS. 11A, 11B and 11C illustrate exemplary experimental results of
operation of an
exemplary seven (7) level voltage modulator operated with active electrodes of
diverts of an FRC
reactor and according to embodiments of the present disclosure.
[0026] FIGS. 12A, 12B and 12C illustrate exemplary experimental results of
operation of an
exemplary seven (7) level voltage modulator operated with active electrodes of
diverts of an FRC
reactor and according to embodiments of the present disclosure.
[0027] It should be noted that elements of similar structures or functions are
generally represented
by like reference numerals for illustrative purpose throughout the figures. It
should also be noted
that the figures are only intended to facilitate the description of the
preferred embodiments.
3

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DETAILED DESCRIPTION
[0028] The following embodiments are described in detail to enable those
skilled in the art to
make and use various embodiments of the present disclosure. It is understood
that other
embodiments would be evident based on the present disclosure, and that system,
process, or
changes may be made without departing from the scope of the present
embodiments.
[0029] In the following description, numerous specific details are given to
provide a thorough
understanding of the present embodiments. However, it will be apparent that
the present
embodiments may be practiced without these specific details. In order to
increase clarity, some
well-known circuits, system configurations, and process steps may not be
described in detail.
[0030] The drawings showing embodiments of the present disclosure are semi-
diagrammatic and
not to scale and, particularly, some of the dimensions are for the clarity of
presentation and are
shown exaggerated in the drawing Figures.
[0031] The embodiments of the present disclosure are directed to systems and
methods that
facilitate simple and effective multilevel hysteresis voltage control methods
for cascaded
multilevel voltage modulators. In embodiments, a cascaded multilevel modulator
comprises a
plurality of power cells connected in series and has any positive integer
number of output voltage
levels to quickly, effectively, and precisely control any unipolar voltage on
the load of the voltage
modulator, and transfer electrical power from an electrical grid via AC/DC
converters or directly
from energy storage elements of the power cells to that load. The embodiments
are also directed
to a method of operational rotation of the power cells of a multilevel voltage
modulator, which
ensures an equal power sharing among the power cells and voltage balancing of
the energy
storage elements of the power cells of the modulator
[0032] In embodiments, an exemplary multilevel hysteresis voltage controller
(MHVC) has a
robust structure, which is free from the above-mentioned drawbacks and does
not have any
additional regulation loops other than a voltage hysteresis loop. The output
voltages of all power
cells of the voltage modulator are adjusted dynamically and in an automated
manner by MHVC to
maintain a minimum preset value of output voltage regulation error, excluding
an influence of
variation of parameters of passive components and the propagation delays of
control signals on the
output voltage oscillations. There are three major and interlinked tasks that
are performed by the
MHVC: 1) maintenance of an voltage modulator's output voltage within the
preset boundaries of
regulation error; 2) identification of appropriate output voltage level at any
moment of time; and 3)
rotation of the power cells.
4

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[0033] Embodiments are directed to a fast MHVC design which can be realized on
any FPGA or
similar design component and can be operated at a high clock rate (tens of
megahertz). The design
comprises a hysteresis block, a voltage level estimator as described herein,
and a switching pattern
generator as described herein.
[0034] FIG. 1 illustrates a schematic of a multi-level voltage modulator
(voltage modulator) 100
according to embodiments of the present disclosure. A multi-level voltage
modulator 100 is
connected to a three-phase grid 101 on a lower voltage side and to a load 102
on higher voltage
side, as well as a control system 105 having a MHVC. Functions of the control
system 105 may
be implemented using either software or hardware processors including software
routines,
hardware components, or combinations thereof
[0035] The exemplary multi-level voltage modulator 100 comprises N series
connected cells
103A-103N, where each cell 103A-103N comprises a secondary winding of
isolation transformer
(VsEcN) 106A-106N connected to a three-phase diode bridge (DBN) 107A-107N, a
capacitive
storage element (CDcN) 108A-108N on a DC side (DC-link) of the DBN 107A-107N,
and a standard
buck converter with an active bidirectional switch (SN) 109A-109N (e.g., for
high voltage
modulators the SN may include IGBT with freewheeling diode, while for lower
voltage modulators
the SN may include low voltage MOSFETs) and a diode (DN) 110A-110N. It will be
appreciated
that N is a positive integer. Each cell 103A-103N may also be equipped with an
optional LCR filter
(LFN, CFN, RFN) 11A-111Nat its output and the voltage modulator 100 may also
be equipped with
an optional CR filter (CFo, RFo) 113 at its output. The DC-links of all of the
power cells 103A-
103N are isolated from each other at the maximum load voltage level by means
of a three-phase
multi-winding transformer (VsEcN) 106A-106N.
[0036] The voltage modulator 100 is assumed to be working in continuous mode,
transferring the
energy from the three-phase grid 101 to the load 102. It is also possible to
operate the voltage
modulator 100 completely disconnected from the grid 101 for a certain period
of time using the
energy accumulated in the storage elements (e.g., capacitors, supercapacitors,
batteries) 108A-
108N of the cells 103A-103N if the voltage on the storage elements 108A-108N
is not
significantly reduced during an operational time in order to maintain a
desired output voltage on
the load 102.
100371 Each DC-link voltage of the voltage modulator's 100 power cells 103A-
103N of the
voltage modulator 100 may be considered a DC voltage source of a fixed
magnitude (VCDcN)
which, in practice according to certain embodiments, may be on the order of 12
to 1200 Volts. The
total voltage across the series connected power cells 103A-103N (i.e., between
terminals OUT+

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104A and OUT- 104B) is dependent upon the number of cells that have been
turned on by closure
of the associated switches Si through SN 109A-109N. For example, if all of the
switches Si through
SN 109A-109N are closed at the same time, then all of DC-link storage elements
(e.g., capacitors)
with voltage VDci-N are connected together in series and added together (i.e.,
summed) to provide
an output voltage equal to N times voltage VDci-N. If each DC-link voltage
source VDci-N has a
value on the order of 800 Volts and N is on the order of 20, then the total
output voltage of the
voltage modulator 100 may be on the order of 16,000 Volts.
[0038] If the switch SN 109N in the power cell 103N is open (i.e., not in
conducting mode) then
this particular cell is "bypassed" and its output voltage is zero. Thus, the
output voltage of the
voltage modulator 100 can be synthesized and modulated by the number of cells
that are turned
ON and OFF.
[0039] Referring to FIG. 1 to contrast, in the standard Pulse Step Modulation
(PSM) technique, if
there are N power cells in series in a voltage modulator and each cell has a
commutation period
T(s), the switch 51 of CELL 1 will be switched on at time ti, but the switch
S2 of CELL 2 is turned
on T/n (s) later than the first one, the third (S3) is turned on 2T/n(s) later
than the second (S2), and
so on. This rotation method of PSM ensures very low ripples at the output of
the voltage modulator,
as their amplitude is reversely proportional to the frequency of AC component
fAc of the output
voltage of the voltage modulator. All power cells are switched at the same
fixed switching
frequency fsw, then fAc=N*fsw.
[0040] Regulation of the output voltage using PSM is performed via linear
regulation concepts
(P1, feedforward or their combination) by calculating the required number of
power cells which
have to be turned on (Coarse Step Modulation), and/or regulation of duty cycle
D (Pulse Width
Modulation), which has to be the same for all power cells in case the passive
components (CDC, LF,
RF, CF) of all power cells are absolutely identical, the stray capacitances
are the same, as well as
the propagation delays of the control signals. However, in reality all passive
components always
have a slight variation of parameters, and the propagation delays of control
signals for power cells
are not always the same. As a result, each power cell has to be switched on
with a different required
duty cycle DN, which has to be corrected in PSM based control system by
additional regulation
loop using a DC-link voltage feedback signal. Moreover, additional adjustment
of turn on times ti,
t2... tN can be necessary to eliminate the low frequency oscillations of
output voltage of the voltage
modulator.
[0041] As discussed above, embodiments herein are directed to a multilevel
hysteresis voltage
controller (MHVC) having a robust structure, which is free from the above-
mentioned drawbacks
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and does not have any additional regulation loops other than a single voltage
hysteresis loop. The
output voltages of all power cells 103A-103N of the voltage modulator 100 are
adjusted
dynamically and in an automated manner by the MHVC to maintain a minimum
preset value of
output voltage regulation error, excluding an influence of variation of
parameters of passive
components and the propagation delays of control signals on the output voltage
oscillations.
[0042] FIG. 2 illustrates an exemplary multi-level hysteresis voltage
controller 200 of the control
system 105 (see FIG. 1) according to embodiments of the present disclosure. An
exemplary
multi-level hysteresis voltage controller 200 comprises a low pass filter (LP-
filter) Filterl 201, a
summation block Suml 202, a hysteresis block Hystl 203, a voltage level
estimator 204, and a
switching pattern generator 205. A real feedback voltage signal VREAL from a
voltage sensor VS
112 (see FIG. 1) goes through a low pass filter Filterl 201 to a negative
input of the summation
block Suml 202, where it is subtracted from the reference voltage VREF to
generate a voltage
error signal AV, as their difference. The voltage error signal AV is input
into the hysteresis block
Hystl 203, which has the settings of high boundary (HB) and low boundary (LB)
thresholds.
When AV reaches the high boundary (HB) of the hysteresis block Hystl 203, the
output value of
the hysteresis block Hystl 203 is set to "1" and remains at this level until
AV crosses its low
boundary (LB) of the hysteresis block Hystl 203. When AV crosses its low
boundary (LB) of the
hysteresis block Hystl 203, the output value of the hysteresis block Hystl 203
is set to "0" and
the output is maintained at this level until AV reaches HB again.
[0043] FIG. 3 illustrates an exemplary voltage level estimator 204 according
to embodiments of
the present disclosure. FIGS. 4A-4D illustrate exemplary operation of the
exemplary voltage
level estimator 204 according to embodiments of the present disclosure.
[0044] The voltage level estimator 204 operates in parallel with the
hysteresis block Hystl 203.
The voltage level estimator 204 receives the same HB and LB setting signals
together with AV
from the output of summation block Suml 202. The exemplary voltage level
estimator 204
comprises a clock counting circuit formed by a clock generator Clock 210, a
logic switch Switchl
211 and a resettable counter Counterl 212. The exemplary voltage level
estimator 204 further
comprises a level decrement circuit 220c0mpri5ing a logic element AND1 221, a
rising edge
detector Rising Edge 2 222 and a free running counter Counter2 223. The
exemplary voltage
level estimator 204 further comprises a level increment circuit 230 having a
logic element AND2
231, a rising edge detector Rising Edge 3 232 and a free running counter
Counter3 233. The
exemplary voltage level estimator 204 further comprises an enable and reset
circuit 240 for
Counterl 212, which comprises of a logic element X0R1 241, a rising edge
detector Rising Edge
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1 242 and a logic element OR1 243. The exemplary voltage level estimator 204
further
comprises a summation block Suml 250.
[0045] The block Counterl 212 is enabled when the clock signal goes through
the upper input
channel of Switchl 211(in case of a True signal on its middle input channel),
and starts counting
a number of clock cycles generated by the Clock 210 in any of the following
cases: If the output
of Compl 213 is True, i.e. the signal AV is lower than the low boundary
hysteresis threshold LB
(AV < LB). This case is illustrated in FIGS. 4A-4D, where at the point C2 the
signal AV becomes
lower than LB and the Counterl 212 starts incrementing a count until AV
returns to the hysteresis
boundaries at the point D2 and the output signal of Compl 213 becomes False;
If the output of
Comp2 214 is True, i.e. the signal A V is higher than the high boundary
hysteresis threshold HB
(A V> HB). This case is illustrated in FIGS. 4A-4D, where at the point B1 the
signal AV becomes
higher than HB and the Counterl 212 starts incrementing a count until AV
returns to the
hysteresis boundaries at the point Cl and the output signal of Comp2 214
becomes False.
[0046] The block Counter2 223 increments its output counting signal, which is
applied to the
negative input of summation block Suml 250, decrementing a number of Levels at
the output of
voltage level estimator 204, if both of the following cases are true at the
same time: If the output
of Compl 213 is True, i.e. the signal AV is lower than the low boundary
hysteresis threshold LB
(AV < LB); If the value of the output counting signal of Counterl 212 is
higher than a preset
value of Time Constant (in cycles).
[0047] If both of the above mentioned conditions are satisfied, then the
output of AND1 221
becomes True and this fact is detected by the block Rising Edge 2 222, which
generates a pulse
of one clock cycle duration, and the block Counter2 223 increments and holds
its output count
decrementing a value at the output of Suml 250 (the signal Levels at the
output of voltage level
estimator 204).
[0048] The block Counter3 233 increments its output counting signal, which is
applied to the
positive input of summation block Suml 250, incrementing a number of Levels at
the output of
voltage level estimator 204, if both of the following cases are true at the
same time: If the output of
Comp2 214 is True, i.e. the signal AV is higher than the high boundary
hysteresis threshold HB
(AV > HB); If the value of the output counting signal of Counterl 212 is
higher than a preset value
of Time Constant (in cycles).
[0049] If both of the above mentioned conditions are satisfied, then the
output of AND2 231
becomes True and this fact is detected by the block Rising Edge 3 232, which
generates a pulse of
one clock cycle duration, and the block Counter3 233 increments and holds its
output count
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incrementing a value at the output of Suml 250 (signal Levels at the output of
voltage level
estimator 204).
[0050] This case of incrementing of levels signal (increment of Counter3 233)
is illustrated in
FIGS. 4A-4D, where the point A2 satisfies the first of two presented above
conditions and the point
B2 corresponds to the second condition, when the output counting signal of
Counterl 212 is higher
than a value of Time Constant preset at 500 clock cycles.
[0051] There are three conditions to be true to reset the Counterl 212 as can
be seen from FIG. 3.
If one of the output signals of the blocks Rising Edge 1 242, Rising Edge 2
222 and Rising Edge 3
232 is True, then the output of block OR1 243 is also True what actually
resets the Counterl.
[0052] FIG. 5 illustrates an exemplary switching pattern generator 205
according to
embodiments of the present disclosure. The exemplary switching pattern
generator enables a
unique method of rotation of an operation duty of the power cells 103A-103N of
voltage
modulator 100, which ensures an automatic power sharing among the power cells
103A-103N, as
well as an adjustment of duty cycle and phase shift of commutation of each
power cell 103A-
103N.
[0053] In embodiments, the exemplary switching pattern generator 205 comprises
a resettable
Counter4 260 with a reset signal forming a circuit based on the comparator
block Comp4 262.
The exemplary switching pattern generator 205 further comprises a multiplexer
Switch 1 263
with N input signals of constant values from 1 to N, where N is a number of
power cells of
voltage modulator 100. The exemplary switching pattern generator 205 further
comprises a
multiplexer Switch 1 263 with N+1 input signals, where each input signal is
represented as an
array of switching states and N-1 of them (1VDC Rotation, 2VDC Rotation ... (N-
1)VDC
Rotation) are dynamic arrays and only two arrays OVDC and NVDC are static and
have the
constant values. The exemplary switching pattern generator 205 receives the
signal Levels from
voltage level estimator 204 and the signal State form the hysteresis block
Hystl 203. The output
signals of the switching pattern generator 205 are N switching commands to all
N switching
elements (said IGBTs) of voltage modulator 100.
[0054] FIGS. 7A-7D illustrate exemplary operation of the exemplary switching
pattern generator
205 according to embodiments of the present disclosure. The exemplary
switching pattern
generator for which operation is depicted in FIGS. 7A-7D is implemented in a
seven-level
voltage modulator consisting of seven power cells.
[0055] The Counter4 260 increments its output value at every rising edge of
the signal State (see
FIGS. 7A-7D) up to value N, which sets the output of Comp4 261 to True and
resets the
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Counter4 260. This output signal of Counter4 260 chooses a constant value at
the corresponding
input of the multiplexer Switch 1 262 at every count and redirects it to the
output of the
multiplexer Switch 1 262 forming the signal Cell rot, which is presented in
FIGS. 7A-7D. Thus,
the signal Cell rot is changed repetitively from N to 1 with a decrement of 1
at every rise edge of
the signal State.
[0056] The signal Levels coming from the voltage level estimator 204 passes
through the
summation block 5um2 263, where it is incremented by 1, and goes to the
control input of the
multiplexer block Switch 2 264. This multiplexer commutates N+1 arrays of
switching states
corresponding to the output voltage levels from OVDC, when all switching
signals are False (zero
volts at the output of voltage modulator 100) to NVDC level, corresponding to
the maximum
output voltage of voltage modulator 100, when all switching signals are True.
These two voltage
levels, the minimum and the maximum output voltage levels, are created by the
static arrays
(OVDC and NVDC, see FIG. 5) of switching states (signals) of the voltage
modulator 100 and no
rotation of power cells is required.
[0057] The functional diagrams of N-1 blocks of dynamic arrays from 1VDC
Rotation to (N-1)DC
rotation are presented in FIGS. 6A-6E.
[0058] FIG. 6A illustrates an exemplary 1VDC rotation block 265Aaccording to
embodiments of
the present disclosure. FIG. 6B illustrates an exemplary 2VDC rotation block
265B according to
embodiments of the present disclosure. FIG. 6C illustrates an exemplary 3VDC
rotation block
265C according to embodiments of the present disclosure. FIG. 6D illustrates
an exemplary
4VDC rotation block 265D according to embodiments of the present disclosure.
FIG. 6E
illustrates an exemplary (N-1)VDC rotation block 265E according to embodiments
of the present
disclosure.
[0059] Each of the blocks 265A-265E depicted in FIGS. 6A-6E comprises a
multiplexer with a
control input, which receives a signal Cell rot from the block Switch 2 264,
and having N
commutated inputs. Each of the blocks 265A-265E depicted in FIGS. 6A-6E
further comprises N
static arrays containing the specific switching states for correct rotation of
the power cells 103A-
103N of voltage modulator 100.
[0060] If the signal Levels takes the values 0 and 1 only, performing a
regulation of the output
voltage of the voltage modulator 100 between OVDC and 1VDC levels, then the
1VDC rotation
block 265A is involved in operation together with a static array OVDC. As can
be seen from FIG.
6A, each of N static arrays from 1VDC1 to 1VDCN of the block 1VDC rotation has
only one high
(True) switching state, which position in array depends on a value of signal
Cell rot. For example

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if Cell rot=1, then only first power cell 103A is operated providing a voltage
of its storage element
to the output of voltage modulator 100 via opened switching element Si 109A
(e.g., an IGBT)
while all other power cells 103B-103N are bypassed. A rotation of the power
cells involved in
providing 1VDC level of output voltage is ensured by the signal Cell rot,
which is changed
repetitively from N to 1 with a decrement of 1 at every rise edge of the
signal State.
[0061] If the signal Levels takes the values 1 and 2 only, performing a
regulation of the output
voltage of the voltage modulator 100 between 1VDC and 2VDC levels, then the
1VDC rotation
block 265A and the 2VDC rotation block 265B are involved in operation
together. As can be seen
from FIG. 6B, each of N static arrays from 2VDC1 to 2VDCN of the 2VDC rotation
block 265B
has two high (True) switching states, which positions in array depend on a
value of signal Cell rot.
For example if Levels = 2 and Cell rot=1, then the first and the second power
cells 103A and 103B
are operated providing a sum of the voltages of their storage elements to the
output of voltage of
the voltage modulator 100 via opened switching elements Si and S2 (109A and
109B) while all
other power cells 103C-103N are bypassed. When the signal Levels changes to 1
at every rising
edge of the signal State, then only one power cell remains connected to the
output and its number
will be decremented by 1, because the signal Cell rot is changed also with a
rising edge of the
signal State. In this case a rotation of the power cells involved in providing
1VDC and 2VDC levels
of output voltage is ensured not only by the signal Cell rot, which is changed
repetitively from N
to 1 with a decrement of 1 at every rise edge of the signal State, but by the
distribution of the high
(said True) switching states in the dynamic arrays of both the 1VDC and 2VDC
rotation blocks
265A and 265B.
[0062] FIG. 8 illustrates exemplary switching signals for an exemplary seven
(7) level voltage
modulator according to embodiments of the present disclosure. FIG. 8 provides
an example of
the operation of the switching pattern generator 205 for a case of a seven-
level voltage modulator
comprising seven power cells connected in series. As can be seen from FIG. 8,
the Levels signal
is changed first from 5 to 6 when the voltage modulator 100 provides an output
voltage between
5VDC and 6VDC levels, and then the Levels signals is switched between 6 and 7,
when the
voltage modulator 100 regulates its output voltage between 6VDC and 7VDC
levels. In both
cases the switching signals Si - S7 (109A-109G) are shifted from each other
ensuring a rotation of
the power cells with an equal distribution of consumed power and providing an
output frequency
of the output voltage to be seven times higher than the switching frequency of
each individual
power cell.
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[0063] FIGS. 9A-9C illustrates simulation results of operation of the
exemplary seven (7) level
voltage modulator according to embodiments of the present disclosure. FIG. 10
illustrates
simulation results (zoomed traces) of operation of the exemplary seven (7)
level voltage
modulator according to embodiments of the present disclosure. The seven-level
voltage
modulator comprises seven power cells connected in series. The reference
output voltage VREF is
a sinusoidal waveform of 100Hz with amplitude of 3kV and DC-offset of 3.5kV,
thus a
maximum output voltage is 6.5kV and the minimum value is 0.5kV (FIGS. 9A-9C).
The
proposed multi-level hysteresis voltage controller operates in such a way to
maintain a regulation
error AV in boundaries of preset values of HB and LB (30V and -30V
respectively, see FIGS.
9A-9C and FIGS. 10A-10C). An overshoot of AV in the level transition regions
depends on the
Time Constant value and can be reduced further to the certain level by
adjusting a value of Time
Constant. The signal Levels presented in FIGS. 9A-9C and FIGS. 10A-10C is
increasing and
decreasing following the reference voltage dynamic. The real output voltage
VREAL is maintained
around VREF with a regulation error AV.
[0064] FIGS. 11A-11C and FIGS. 12A-12C show the experimental results of a
single-phase seven
(7) level modulator comprising seven (7) cells connected in series with
capacitive storage element
on DC-link side as depicted in FIG. 1. The seven (7) level modulator is
operated with active
electrodes installed in the diverters of the colliding beam FRC based reactor.
The active electrodes
are in touch with the plasma and the PSU provides the current of up to 5kA to
the plasma with an
output voltage of up to 5kV. The plasma parameters during a plasma discharge
significantly and
rapidly change and thus the required bias voltage has to be regulated and
stabilized at the desired
reference value.
[0065] The reference voltage VREF and real output voltage of the PSU VouT are
shown as functions
of time in FIG. 11B. As can be seen, VOUT is regulated and stabilized around
VREF with a voltage
control error signal presented in FIG. 11A while not exceeding a preset value
of +/-100A. The
required number of levels of the output voltage calculated by the Voltage
Level Estimator block
(204, see FIG. 2) is shown in FIG. 11B. As the capacitor banks in the DC-links
of power cells are
discharging it requires more levels of output voltage to be set up to maintain
a constant output
voltage of 3.5kV and the proposed methodology calculates it accordingly. At
the end of the pulse
all capacitor banks are discharged to the voltage, at which a setting of all 8
levels is not enough
regulate VouT, which causes an increase of output voltage error signal.
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[0066] FIG. 12 shows the experimental results of operation of the same Active
Electrode PSU with
a triangle reference voltage VREF, demonstrating a high dynamic capability of
proposed voltage
hysteresis controller to regulate and stabilize a voltage with a fast changing
dV/dt value.
[0067] Embodiments of the present disclosure are directed to a multi-level
cascaded voltage
modulator connectable to a load. In embodiments, the multi-level cascaded
voltage modulator
comprises a plurality of power cells connected in series, wherein each cell of
the plurality of cells
comprises a of bidirectional switch and a storage element, and a control
system coupled to the
plurality of cells and having a multi-level hysteresis voltage controller. In
embodiments, the control
system is configured to cause the plurality of cells to output N levels of
voltage on the load, wherein
N is a positive integer corresponding to the number of power cells of the
plurality of power cells.
[0068] In embodiments, each cell of the plurality of cells includes a
secondary winding isolation
transformer, a three-phase diode bridge coupled to the transformer and the
storage element, and a
diode.
[0069] In embodiments, the bidirectional switch is one of an IGBT or a MOSFET.
[0070] In embodiments, each cell of the plurality of cells further comprises
an LCR filter at its
output.
[0071] In embodiments, the modulator further comprises a CR filter at the
output of the plurality
of cells.
[0072] In embodiments, the control system is further configured to cause the
transfer of electrical
power from the energy storage elements of the power cells to the load.
[0073] In embodiments, the control system is further configured to balance
voltages on the storage
elements.
[0074] In embodiments, the storage element is a capacitor.
[0075] In embodiments, the control system including one or more processors
coupled to a non-
transitory memory comprising a plurality of instructions that when executed
causes the one or more
processors to control a level of voltage on the load.
[0076] In embodiments, the plurality of instructions when executed causes the
one or more
processors to control an output voltage level of the modulator as a function
of the level of voltage
on the load, a reference voltage and a voltage error equal to the difference
between the level of
voltage on the load and the reference voltage.
[0077] In embodiments, the plurality of instructions when executed causes the
one or more
processors to subtract from a reference voltage signal VREF a real feedback
voltage signal VREAL
received from a voltage sensor, produce, by a voltage level estimator, an
estimated voltage level
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signal, Levels, using a high boundary (HB) threshold of a hysteresis block, a
low boundary (LB)
threshold of the hysteresis block, and the voltage difference signal AV, and
generate, by a switching
pattern generator, a plurality of switching signals based on the estimated
voltage level, Levels, and
a state of the hysteresis block.
[0078] In embodiments, to subtract from a reference voltage signal VREF a real
feedback voltage
signal VREAL, the plurality of instructions when executed causes the one or
more processors to feed
the real feedback voltage signal VREAL to a low-pass filter input, feed a low-
pass filter output signal
to a negative input of a first summation block, feed the reference voltage
signal VREF to a positive
input of the first summation block, and produce a voltage difference signal AV
at an output of the
first summation block.
[0079] In embodiments, when AV reaches the high boundary (HB) threshold of the
hysteresis
block, the plurality of instructions when executed causes the one or more
processors to set the state
of the hysteresis block to "1."
[0080] In embodiments, when AV reaches the low boundary (LB) threshold of the
hysteresis
block, the plurality of instructions when executed causes the one or more
processors to set the state
of the hysteresis block to "0."
[0081] In embodiments, to produce the estimated voltage level Levels, the
plurality of
instructions when executed causes the one or more processors to apply a clock
signal to a clock
generator, count, by a resettable counter, a number of clock signals generated
by the clock generator
when one or more of the following conditions is true: AV is lower than the low
boundary (LB)
threshold of the hysteresis block; or AV is higher than the high boundary (HB)
threshold of the
hysteresis block.
[0082] In embodiments, the plurality of instructions when executed causes the
one or more
processors further to, increment, by a free running counter, a free running
counter output signal,
apply the free running counter output signal to a second summation block, and
decrement a number
of Levels at an output of the voltage level estimator when both of the
following cases are true at
the same time: the signal AV is lower than the low boundary hysteresis
threshold LB; and the value
of an output counting signal of the resettable counter is higher than a preset
value of a time constant.
[0083] In embodiments, when both the signal AV is lower than the low boundary
hysteresis
threshold LB and the value of the output counting signal of the resettable
counter is higher than the
preset value of a time constant, the plurality of instructions when executed
causes the one or
more processors to set the output of a logic element of a level decrement
circuit to True, detect the
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output of the logic element with a rising edge detector, and increment the
free running counter, and
thereby decrement an output level at a summation block.
[0084] In embodiments, the multi-level hysteresis voltage controller comprises
a low pass filter
having a low-pass filter input and a low-pass filter output, a first summation
block having a positive
input and a negative input, a hysteresis block having a high boundary (HB)
threshold and a low
boundary (LB) threshold, a voltage level estimator having a plurality of
voltage level estimator
inputs and a voltage level output signal Levels, and a switching pattern
generator having a plurality
of switching pattern generator inputs and a plurality of switching pattern
generator outputs.
[0085] In embodiments, the switching pattern generator comprises a comparator
block, a resettable
counter, a first multiplexer having a first plurality of input signals, and a
second multiplexer having
a second plurality of input signals.
[0086] In embodiments, each input signal of the second plurality of input
signals represents an
array of switching states each corresponding to a one of plurality of output
levels for a voltage
modulator.
[0087] In embodiments, the plurality of output levels ranges from OVDC when
all switching
signals are false to a maximum output voltage when all switching signals are
true.
[0088] In embodiments, the voltage level estimator comprises, a clock counting
circuit, a level
decrement circuit, an enable and reset circuit for the resettable counter, and
a second summation
block.
[0089] In embodiments, the clock counting circuit comprises a clock generator,
a logic switch, and
a resettable counter.
[0090] In embodiments, the level decrement circuit comprises a first logic
element, a rising edge
detector, and a free running counter.
[0091] In embodiments, the enable and reset circuit comprises a second logic
element, a rising
edge detector and a third logic element.
[0092] In embodiments, the first logic element is an AND gate, the second
logic element is an
XOR gate, and the third logic element is an OR gate.
[0093] In embodiments, when AV reaches the high boundary (HB) threshold of the
hysteresis
block, the state of the hysteresis block is set to "1."
[0094] In embodiments, when AV reaches the low boundary (LB) threshold of the
hysteresis
block, the state of the hysteresis block is set to "0."
[0095] In embodiments, the load is in a power electronic circuit in one or
more of an electrode
biasing power supply for a Tokamak plasma reactor, an electrode biasing power
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plasma reactor, a power supply for a neutral beam injector, a magnetron
modulator, a klystron
modulator, an E-gun modulator, a high power X-ray power supply, a mediumwave
transmitter, a
longwave transmitter, and a shortwave solid-state transmitter.
[0096] Embodiments of the present disclosure are directed to a multi-level
hysteresis voltage
controller connectable to a load. In embodiments, the multi-level hysteresis
voltage controller
(MHVC) comprises a low pass filter having a low-pass filter input and a low-
pass filter output, a
first summation block having a positive input and a negative input, a
hysteresis block having a high
boundary (FIB) threshold and a low boundary (LB) threshold, a voltage level
estimator having a
plurality of voltage level estimator inputs and a voltage level output signal
Levels; and a switching
pattern generator having a plurality of switching pattern generator inputs and
a plurality of
switching pattern generator outputs.
[0097] In embodiments, the switching pattern generator comprises a comparator
block, a resettable
counter, a first multiplexer having a first plurality of input signals, and a
second multiplexer having
a second plurality of input signals.
[0098] In embodiments, each input signal of the second plurality of input
signals represents an
array of switching states each corresponding to a one of plurality of output
levels for a voltage
modulator.
[0099] In embodiments, the plurality of output levels ranges from OVDC when
all switching
signals are false to a maximum output voltage when all switching signals are
true.
[00100] In embodiments, the voltage level estimator comprises a clock counting
circuit, a level
decrement circuit comprising, an enable and reset circuit for the resettable
counter, and a second
summation block.
[00101] In embodiments, the clock counting circuit comprises a clock
generator, a logic switch,
and a resettable counter.
[00102] In embodiments, the level decrement circuit comprises a first logic
element, a rising edge
detector, and a free running counter.
[00103] In embodiments, the enable and reset circuit comprises a second logic
element, a rising
edge detector and a third logic element.
[00104] In embodiments, the first logic element is an AND gate, the logic
second element is an
XOR gate, and the third logic element is an OR gate.
[00105] In embodiments, when AV reaches the high boundary (HB) threshold of
the hysteresis
block, the state of the hysteresis block is set to "1."
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[00106] In embodiments, when AV reaches the low boundary (LB) threshold of the
hysteresis
block, the state of the hysteresis block is set to "0."
[00107] In embodiments, the load is in a power electronic circuit in one or
more of an electrode
biasing power supply for a Tokamak plasma reactor, an electrode biasing power
supply for a FRC
plasma reactor, a power supply for a neutral beam injector, a magnetron
modulator, a klystron
modulator, an E-gun modulator, a high power X-ray power supply, a mediumwave
transmitter, a
longwave transmitter, and a shortwave solid-state transmitter.
[00108] Embodiments of the present disclosure are directed to a method of
controlling a voltage
supplied to a load using a multi-level hysteresis voltage controller. In
embodiments, the method
comprises receiving a real feedback voltage signal VREAL from a voltage
sensor. In embodiments,
the method further comprises subtracting the real feedback voltage signal
VREAL from a reference
voltage signal VREF by: feeding the real feedback voltage signal VREAL to a
low-pass filter input,
feeding a low-pass filter output signal to a negative input of a first
summation block, feeding the
reference voltage signal VREF to a positive input of the summation block, and
producing a voltage
difference signal AV at an output of the first summation block.
[00109] In embodiments, the method further comprises producing, by a voltage
level estimator,
an estimated voltage level signal, Levels, using a high boundary (HB)
threshold of a hysteresis
block, a low boundary (LB) threshold of the hysteresis block, and the voltage
difference signal AV.
In embodiments, the method further comprises generating, by a switching
pattern generator, a
plurality of switching signals based on the estimated voltage level, Levels,
and a state of the
hysteresis block.
[00110] In embodiments, when AV reaches the high boundary (HB) threshold of
the hysteresis
block, the state of the hysteresis block is set to "1."
[00111] In embodiments, when AV reaches the low boundary (LB) threshold of the
hysteresis
block, the state of the hysteresis block is set to "0."
[00112] In embodiments, the voltage level estimator produces the estimated
voltage level Levels
by: applying a clock signal to a clock generator; counting, by a resettable
counter, a number of
clock signals generated by the clock generator when one or more of the
following conditions is
true: AV is lower than the low boundary (LB) threshold of the hysteresis
block, or AV is higher
than the high boundary (HB) threshold of the hysteresis block; incrementing,
by a free running
counter, a free running counter output signal; applying the free running
counter output signal to a
summation block; and decrementing a number of Levels at an output of the
voltage level estimator
when both of the following cases are true at the same time: the signal AV is
lower than the low
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boundary hysteresis threshold LB, and the value of an output counting signal
of the resettable
counter is higher than a preset value of a time constant.
[00113] In embodiments, when both the signal AV is lower than the low boundary
hysteresis
threshold LB and the value of the output counting signal of the resettable
counter is higher than the
preset value of a time constant, a first logic element output of a level
decrement circuit becomes
True; a rising edge detector detects the first logic element output; and the
free running counter is
incremented, thereby decrementing an output level at a summation block.
[00114] The processors of the control systems and controllers of the present
disclosure may be
configured to perform the computations and analyses described in the present
disclosure and may
include or be communicatively coupled to one or more memories including non-
transitory
computer readable medium. It may include a processor-based or microprocessor-
based system
including systems using microcontrollers, reduced instruction set computers
(RISC), application
specific integrated circuits (ASICs), logic circuits, and any other circuit or
processor capable of
executing the functions described herein. The above examples are exemplary
only, and are thus not
intended to limit in any way the definition and/or meaning of the term
"processor" or "computer."
[00115] Functions of the processor may be implemented using either software
routines, hardware
components, or combinations thereof The hardware components may be implemented
using a
variety of technologies, including, for example, integrated circuits or
discrete electronic
components. The processor unit typically includes a readable/writeable memory
storage device and
typically also includes the hardware and/or software to write to and/or read
the memory storage
device.
[00116] The processors may include a computing device, an input device, a
display unit and an
interface, for example, for accessing the Internet. The computer or processor
may include a
microprocessor. The microprocessor may be connected to a communication bus.
The computer
or processor may also include a memory. The memory may include Random Access
Memory
(RAM) and Read Only Memory (ROM). The computer or processor may also include a
storage
device, which may be a hard disk drive or a removable storage drive such as,
e.g., an optical disk
drive and the like. The storage device may also be other similar means for
loading computer
programs or other instructions into the computer or processor.
[00117] The processor executes a set of instructions that are stored in one or
more storage
elements, in order to process input data. The storage elements may also store
data or other
information as desired or needed. The storage element may be in the form of an
information source
or a physical memory element within a processing machine.
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[00118] The set of instructions may include various commands that instruct the
processors as a
processing machine to perform specific operations such as the methods and
processes of the various
embodiments of the subject matter described herein. The set of instructions
may be in the form of
a software program. The software may be in various forms such as system
software or application
software. Further, the software may be in the form of a collection of separate
programs or modules,
a program module within a larger program or a portion of a program module. The
software also
may include modular programming in the form of object-oriented programming.
The processing
of input data by the processing machine may be in response to user commands,
or in response to
results of previous processing, or in response to a request made by another
processing machine.
[00119] As used herein, the terms "software" and "firmware" may be
interchangeable, and
include any computer program stored in memory for execution by a computer,
including RAM
memory, ROM memory, EEPROM memory, and non-volatile RAM (NVRAM) memory. The
above memory types are exemplary only, and are thus not limiting as to the
types of memory usable
for storage of a computer program.
[00120] All features, elements, components, functions, and steps described
with respect to any
embodiment provided herein are intended to be freely combinable and
substitutable with those
from any other embodiment. If a certain feature, element, component, function,
or step is described
with respect to only one embodiment, then it should be understood that that
feature, element,
component, function, or step can be used with every other embodiment described
herein unless
explicitly stated otherwise. This paragraph therefore serves as antecedent
basis and written support
for the introduction of claims, at any time, that combine features, elements,
components, functions,
and steps from different embodiments, or that substitute features, elements,
components, functions,
and steps from one embodiment with those of another, even if the following
description does not
explicitly state, in a particular instance, that such combinations or
substitutions are possible.
Express recitation of every possible combination and substitution is overly
burdensome, especially
given that the permissibility of each and every such combination and
substitution will be readily
recognized by those of ordinary skill in the art upon reading this
description.
[00121] In many instances entities are described herein as being coupled to
other entities. It
should be understood that the terms "coupled" and "connected" or any of their
forms are used
interchangeably herein and, in both cases, are generic to the direct coupling
of two entities without
any non-negligible e.g., parasitic intervening entities and the indirect
coupling of two entities with
one or more non-negligible intervening entities. Where entities are shown as
being directly coupled
together, or described as coupled together without description of any
intervening entity, it should
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be understood that those entities can be indirectly coupled together as well
unless the context clearly
dictates otherwise.
[00122] While the embodiments are susceptible to various modifications and
alternative forms,
specific examples thereof have been shown in the drawings and are herein
described in detail. It
should be understood, however, that these embodiments are not to be limited to
the particular form
disclosed, but to the contrary, these embodiments are to cover all
modifications, equivalents, and
alternatives falling within the spirit of the disclosure. Furthermore, any
features, functions, steps,
or elements of the embodiments may be recited in or added to the claims, as
well as negative
limitations that define the inventive scope of the claims by features,
functions, steps, or elements
that are not within that scope.

Representative Drawing
A single figure which represents the drawing illustrating the invention.
Administrative Status

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Event History

Description Date
Correspondent Determined Compliant 2024-10-18
Deemed Abandoned - Failure to Respond to an Examiner's Requisition 2024-09-03
Inactive: Submission of Prior Art 2024-05-06
Amendment Received - Voluntary Amendment 2024-05-02
Inactive: Submission of Prior Art 2024-03-18
Amendment Received - Voluntary Amendment 2024-03-14
Examiner's Report 2024-03-07
Inactive: Report - No QC 2024-03-07
Inactive: Submission of Prior Art 2023-07-26
Amendment Received - Voluntary Amendment 2023-06-28
Inactive: Submission of Prior Art 2023-04-06
Amendment Received - Voluntary Amendment 2023-03-14
Letter Sent 2022-12-20
All Requirements for Examination Determined Compliant 2022-09-30
Request for Examination Received 2022-09-30
Request for Examination Requirements Determined Compliant 2022-09-30
Common Representative Appointed 2020-11-07
Inactive: Cover page published 2020-01-15
Letter sent 2020-01-09
Application Received - PCT 2020-01-06
Inactive: First IPC assigned 2020-01-06
Inactive: IPC assigned 2020-01-06
Inactive: IPC assigned 2020-01-06
Inactive: IPC assigned 2020-01-06
Request for Priority Received 2020-01-06
Priority Claim Requirements Determined Compliant 2020-01-06
National Entry Requirements Determined Compliant 2019-12-05
Application Published (Open to Public Inspection) 2018-12-20

Abandonment History

Abandonment Date Reason Reinstatement Date
2024-09-03

Maintenance Fee

The last payment was received on 2024-05-22

Note : If the full payment has not been received on or before the date indicated, a further fee may be required which may be one of the following

  • the reinstatement fee;
  • the late payment fee; or
  • additional fee to reverse deemed expiry.

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Fee History

Fee Type Anniversary Year Due Date Paid Date
Basic national fee - standard 2019-12-05 2019-12-05
MF (application, 2nd anniv.) - standard 02 2020-06-18 2020-05-25
MF (application, 3rd anniv.) - standard 03 2021-06-18 2021-05-25
MF (application, 4th anniv.) - standard 04 2022-06-20 2022-05-24
Request for examination - standard 2023-06-19 2022-09-30
MF (application, 5th anniv.) - standard 05 2023-06-19 2023-05-03
MF (application, 6th anniv.) - standard 06 2024-06-18 2024-05-22
Owners on Record

Note: Records showing the ownership history in alphabetical order.

Current Owners on Record
TAE TECHNOLOGIES, INC.
Past Owners on Record
MIKHAIL SLEPCHENKOV
Past Owners that do not appear in the "Owners on Record" listing will appear in other documentation within the application.
Documents

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Document
Description 
Date
(yyyy-mm-dd) 
Number of pages   Size of Image (KB) 
Drawings 2019-12-05 12 715
Claims 2019-12-05 8 303
Description 2019-12-05 20 1,139
Representative drawing 2019-12-05 1 47
Abstract 2019-12-05 2 85
Cover Page 2020-01-15 1 59
Amendment / response to report 2024-07-05 1 253
Maintenance fee payment 2024-05-22 69 2,912
Examiner requisition 2024-03-07 4 194
Amendment / response to report 2024-03-14 5 157
Amendment / response to report 2024-05-02 5 157
Courtesy - Letter Acknowledging PCT National Phase Entry 2020-01-09 1 593
Courtesy - Acknowledgement of Request for Examination 2022-12-20 1 431
Amendment / response to report 2023-06-28 5 183
Patent cooperation treaty (PCT) 2019-12-05 2 74
International search report 2019-12-05 4 153
National entry request 2019-12-05 3 93
Declaration 2019-12-05 1 13
Correspondence 2019-12-09 1 25
Request for examination 2022-09-30 5 131
Amendment / response to report 2023-03-14 5 133