Note: Claims are shown in the official language in which they were submitted.
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Claims
1. A ceramic material in powder form comprising particles
having an average particle size of 0.1 to 30 µm and each formed of an
agglomerate of grains with each grain comprising a nanocrystal of a
ceramic material of the formula:
Si3-x Al x O y N z~(I')
wherein 0 < x < 3, 0 < y <= 6 and 0 < z <= 4, and wherein ceramic
materials
of formula (I) in which x = y and z - 4 - x are excluded.
2. A ceramic material in powder form according to claim 1,
wherein x is 0.2, y is 0.3 and z is 3.7.
3. A ceramic material in powder form according to claim 1,
wherein x is 1.5, y is 2.5 and z is 1.5.
4. A ceramic material in powder form according to claim 1,
further including at least one additive comprising at least one element
selected from the group consisting of B, C, Mg, Sc, Ti, V, Cr, Mn, Fe, Co,
Ni, Cu, Zn, Se, Rb, Sr, Y, Zr, No, Mo, Rh, Cd, Te, Ba, La, Ce, Pr, Nd, Sm,
Eu, Gd, Tb, Dy, Hb, Er, Tm, Yb, Lu, Hf, Ta, Os, Ir and Tl.
5. A ceramic material in powder form according to claim 4,
wherein said additive is boron or carbon.
6. A ceramic material in powder form according to claim 1,
wherein said average particle size ranges from 0.1 to 5 µm.
7. A process for producing a ceramic material in powder form
comprising particles having an average particle size of 0.1 to 30 µm and
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each formed of an agglomerate of grains with each grain comprising a
nanocrystal of a ceramic material of the formula
Si3-x Al x O y N z (I)
wherein 0 <= x <= 3, 0 <= y <= 6 and 0 < z <= 4,
with the proviso that when x is 0
or 3, y cannot be 0, the process comprising the steps of:
a) providing at least two reagents comprising as a whole at least
three elements selected from the group consisting of silicon, aluminum,
oxygen and nitrogen; and
b)subjecting said reagents to high-energy ball milling to cause
solid state reaction therebetween and formation of particles having an
average particle size of 0.1 to 30 µm, each particle being formed of an
agglomerate of grains with each grain comprising a nanocrystal of a
ceramic material of the formula (I).
8. A process according to claim 7, wherein said reagents are
selected from the group consisting of silicon, aluminum silicide and oxides,
nitrides and oxynitrides of silicon and aluminum.
9. A process according to claim 8, wherein said reagents are
selected from the group consisting of Si, SiO2, Si3N4, Al, Al2O3 and AlN.
10. A process according to claim 7, wherein step (b) is carried out
in a vibratory ball mill operated at a frequency of 8 to 25 Hz.
11. A process according to claim 10 wherein said vibratory ball
mill is operated at a frequency of about 17 Hz.
12. A process according to claim 7, wherein step (b) is carried out
in a rotary ball mill operated at a speed of 150 to 1500 r.p.m.
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13. A process according to claim 12, wherein said rotary ball mill
is operated at a speed of about 1000 r.p.m.
14. A process according to claim 7, wherein step (b) is carried out
under an inert gas atmosphere.
15. A process according to claim 14, wherein said inert gas
atmosphere comprises argon or helium.
16. A process according to claim 7, wherein step (b) is carried out
under a reactive gas atmosphere.
17. A process according to claim 16, wherein said reactive gas
atmosphere comprises hydrogen, nitrogen, ammonia, carbon, monoxide,
carbon dioxide, silicon tetrahydride, silicon tetrachloride or water vapor.
18. A process according to claim 17, wherein step (b) is carried out
in the presence of a liquid or a greasy substance.
19. A process according to claim 18, wherein said liquid is
selected from the group consisting of butane, acetone, methanol, ethanol,
isopropanol, toluene and water.
20. A process according to claim 18, wherein said greasy
substance is stearic acid.
21. A process according to claim 7, further including the step of
admixing during step (b) at least one additive comprising at least one
element selected from the group consisting of B, C, Mg, Sc, Ti, V, Cr, Mn,
Fe, Co, Ni, Cu, Zu, Se, Rb, Sr, Y Zr, Nb, Mo, Rh, Cd, Te, Ba, La, Ce, Pr,
Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, Os, Ir and Tl.
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22. A process according to claim 21, wherein said additive is
boron.
23. A process according to claim 21, wherein said additive is
carbon.