Note: Claims are shown in the official language in which they were submitted.
41
I claim:
1. Apparatus for forging a body comprising an
enclosure having a mold, forging material provided in the
mold, and a forged product formed from the forging material
in the mold at a predetermined temperature.
2. The apparatus of claim 1, wherein the enclosure is
a heated enclosure having a chamber for housing the mold, a
chamber heater, a ram heater and an anvil heater in the
enclosure, a multiport coupled to the chamber for supplying
material to the chamber, and a line coupled to the chamber
for removing exhaust gases.
3. The apparatus of claim 2, wherein the multiport is
an inlet/outlet multiport.
4. The apparatus of claim 2, wherein the line is a
vacuum/vent line.
5. The apparatus of claim 2, wherein the forged
product is a monocrystal, polycrystal or amorphous body.
6. The apparatus of claim 1, wherein the predetermined
temperature ranges between about 400°C and about a melting
point of the body.
7. The apparatus of claim 1, wherein the predetermined
temperature is not greater than about 400°C.
8. The apparatus of claim 1, wherein the predetermined
temperature is not greater than a melting point of a lowest
melting phase in the body.
9. The apparatus of claim 5, wherein the body is
forged at a temperature of about 400°C.
10. The apparatus of claim 5, wherein the body is
forged at a temperature of about 600°C.
11. The apparatus of claim 5, wherein the body is
forged at a temperature of about 800°C.
12. The apparatus of claim 5, wherein the body is of
polycrystalline material.
13. The apparatus of claim 1, wherein the body is of
amorphous material.
42
14. The apparatus of claim 5, wherein the body
comprises single crystalline, polycrystalline and amorphous
portions.
15. The apparatus of claim 2, wherein the product is
formed in an atmosphere having a predetermined pressure in
the chamber.
16. The apparatus of claim 15, wherein the atmosphere
is selected from a group consisting of vacuum, reduced
pressure, inert atmosphere, reactive atmosphere, and
combinations thereof.
17. The apparatus of claim 15, wherein the atmosphere
is reactive atmosphere
18. The apparatus of claim 17, wherein the reactive
atmosphere is selected from a group consisting of plasma,
reactive gases, solids, and combinations thereof.
19. The apparatus of claim 15, wherein the body is
formed by purification of the forging material.
20. The apparatus of claim 1, wherein the forging
material is a powder.
21. The apparatus of claim 20, wherein the powder
comprises constituents selected from a group consisting of
silicon, silicon compound comprising at least one atom of
silicon, silicon and germanium, Si x Ge1-x solid solution,
silicon and silicon carbide Si x(SiC)1-x, silicon and silicon
dioxide Si x(SiO2)1-x, silicon and ceramic, silicon and any
oxide Si x(Oxide)1-x, silicon and any metal Si x M1-x, silicon and
any alloy Si x A1-x, and combinations thereof.
22. The apparatus of claim 21, wherein the anvil has a
temperature during forging between at least about room
temperature and lower than a melting point of at least one of
the constituents forming the crystal R T <= T <= T M.
23. The apparatus of claim 22, wherein the temperature
is about 400°C <= T <= 800°C.
24. The apparatus of claim 22, wherein the temperature
is about 200°C <= T <= 1000°C.
43
25. The apparatus of claim 22, wherein the temperature
is about 200°C <= T <= 1200°C.
26. The apparatus of claim 22, wherein the temperature
is not greater than about 200°C.
27. The apparatus of claim 26, wherein the temperature
is not lesser than about 1200°C.
28. The apparatus of any of the preceding claims,
wherein the body is forged in vacuum, reduced pressure or
inert atmosphere having desired pressure.
29. The apparatus of any of the preceding claims,
wherein the body is forged in vacuum, reduced pressure or
reactive atmosphere having desired pressure.
30. The apparatus of claim 29, wherein the reactive
atmosphere is selected from a group consisting of plasma,
reactive gases, solids and combinations thereof and wherein a
process of purification is administered.
31. The apparatus of any of the preceding claims,
wherein the powder forged is silicon powder or shot having
various grain sizes from sub-micron to large shot sizes of
several millimeters or larger or the powder forged is silicon
compound comprising at least one atom of silicon.
32. The apparatus of claim 31, wherein the powder
forged is silicon powder and germanium powder or shot having
various grain sizes from sub-micron to rather large shot
sizes of several millimeters or larger.
33. The apparatus of claim 31, wherein the powder
forged is silicon powder and Si x Ge1-x (0 <= x <=1) powder or
shot having various grain sizes from sub-micron to rather
large shot sizes of several millimeters or larger.
34. The apparatus of claim 31, wherein the powder
forged is silicon powder and silicon carbide, Si x(SiC)1-x (0 <=
x <=1) powder or shot having various grain sizes from sub-
micron to rather large shot sizes of several millimeters or
larger.
35. The apparatus of claim 31, wherein the powder
44
forged is silicon powder and silicon dioxide, Si x(SiO2)1-x (0 <=
x <=1) powder or shot having various grain sizes from sub-
micron to rather large shot sizes of several millimeters or
larger.
36. The apparatus of claim 31, wherein the powder
forged is silicon powder and metal, Si x M1-x (0 <= x <=1) powder
or shot having various grain sizes from sub-micron to rather
large shot sizes of several millimeters or larger.
37. The apparatus of claim 31, wherein the powder
forged is silicon powder and Si x(Alloy)1-x (0 <= x <=1) powder
or shot having various grain sizes from sub-micron to rather
large shot sizes of several millimeters or larger.
38. The apparatus of claim 31, wherein the powder
forged is silicon powder and/or metal and/or ceramic and/or
alloy and/or oxide and/or any suitable additive powder or
shot having various grain sizes from sub-micron to rather
large shot sizes of several millimeters or larger.
39. The apparatus of claim 2, wherein the forging
apparatus comprises an anvil, a ram and a mold for forging
the crystal.
40. The apparatus of claim 39, wherein each part in the
enclosure is independently heated.
41. The apparatus of claim 39, wherein the enclosure is
heated from all sides.
42. The apparatus of claim 39, wherein the enclosure is
enclosed fully or partially in a vacuum, reduced pressure or
desired pressure chamber, and wherein the chamber is filled
with inert gas, reactive gas or plasma gas.
43. An extrusion apparatus for extruding a body,
wherein the body has a temperature between 400°C and near
melting point.
44. The apparatus of claim 43, wherein the temperature
is less than 400°C or from 400°C to a melting point of a
lowest melting phase in the body being extruded.
45. The apparats of claim 43, further comprising an
45
extrusion chamber for holding powder and forming an extruded
body, further comprising a refill hopper for delivering
material to be extruded from a material delivery assembly.
46. The apparatus of claim 45, further comprising a
piston and a tube shaper for forcing the extruded body
through the tube shaper.
47. The apparatus of claim 46, further comprising a
surrounding chamber having a cooled wall and an internal
heater, the chamber being coupled to a gas inlet/outlet
multiport and a vacuum/vent line.
48. The apparatus of any of the preceding claims 43 to
47, wherein the body is extruded at a temperature of about
400°C.
49. The apparatus of any of the preceding claims 43 to
48, wherein the body is extruded at a temperature of about
600°C.
50. The apparatus of any of the preceding claims 43 to
49, wherein the body is extruded at a temperature of about
800°C.
51. The apparatus of any of the preceding claims 43 to
50, wherein the extruded body is monocrystal or
polycrystalline material having at least one atom of silicon.
52. The apparatus of any of the preceding claims 43 to
51, wherein the extruded body is amorphous material having at
least one atom of silicon.
53. The apparatus of any of the preceding claims 43 to
52, wherein the extruded body comprises single crystalline
portion and polycrystalline portion and amorphous portion.
54. The apparatus of any of the preceding claims 43 to
53, wherein the extruding is in vacuum, reduced pressure or
inert atmosphere having desired pressure.
55. The apparatus of any of the preceding claims 43 to
54, wherein the extruding is in vacuum, reduced pressure or
reactive atmosphere having desired pressure.
56. The apparatus of any of the preceding claims 43 to
46
55, wherein the reactive atmosphere is plasma, reactive gases
or solid and a process of purification is administered.
57. The apparatus of any of the preceding claims 43 to
56, wherein the extruding powder is selected from a group
consisting of silicon, silicon compound comprising at least
one atom of silicon, silicon and germanium, Si x Ge1-x solid
solution, silicon and silicon carbide Si x(SiC)1-x, silicon and
silicon dioxide Si x(SiO2)1-x, silicon and any ceramic, silicon
and any oxide Si x(Oxide)1-x, silicon and any metal Si x M1-x,
silicon and any alloy Si x A1-x, any combination between
themselves at temperature equal or greater than room
temperature and lower than the melting point of one or more
constituents of the pressed body R T <= T <= T M.
58. The apparatus of any of the preceding claims 43 to
57, wherein the temperature is about 400°C <= T <=
800°C.
59. The apparatus of any of the preceding claims 43 to
58, wherein the temperature is about 200°C <= T <=
1000°C.
60. The apparatus of any of the preceding claims 43 to
59, wherein the temperature is about 200°C <= T <=
1200°C.
61. The apparatus of any of the preceding claims 43 to
60, wherein the temperature is smaller than 200°C or greater
than 1200°C.
62. The apparatus of any of the preceding claims 43 to
61, wherein the extruding is in vacuum, reduced pressure or
inert atmosphere having desired pressure.
63. The apparatus of any of the preceding claims 43 to
62, wherein the extruding is in vacuum, reduced pressure or
reactive atmosphere having desired pressure.
64. The apparatus of any of the preceding claims 43 to
63, wherein the reactive atmosphere is plasma, reactive gases
or solid and a process of purification is administered.
65. The apparatus of any of the preceding claims 43 to
64, wherein the powder is silicon powder or shot having
various grain sizes from sub-micron to rather large shot
sizes of several millimeters or larger or silicon compound
47
comprising at least one atom of silicon.
66. The apparatus of any of the preceding claims 43 to
65, wherein the powder is silicon powder and germanium powder
or shot having various grain sizes from sub-micron to rather
large shot sizes of several millimeters or larger.
67. The apparatus of any of the preceding claims 43 to
66, wherein the powder is silicon powder and Si x Ge1-x (0 <= x
<=1) powder or shot having various grain sizes from sub-micron
to rather large shot sizes of several millimeters or larger.
68. The apparatus of any of the preceding claims 43 to
67, wherein the powder is silicon powder and silicon carbide,
Si x (SiC)1-x (0 <= x <= 1) powder or shot having various grain
sizes from sub-micron to rather large shot sizes of several
millimeters or larger.
69. The apparatus of any of the preceding claims 43 to
68, wherein the powder is silicon powder and silicon dioxide,
Si x (SiO2)1-x (0 <= x <= 1) powder or shot having various grain
sizes from sub-micron to rather large shot sizes of several
millimeters or larger.
70. The apparatus of any of the preceding claims 43 to
69, wherein the powder is silicon powder and metal, Si x M1-x (0
<= x <= 1) powder or shot having various grain sizes from sub-
micron to rather large shot sizes of several millimeters or
larger.
71. The apparatus of any of the preceding claims 43 to
70, wherein the powder is silicon powder and Si x (Alloy)1-x (0
<= x <= 1) powder or shot having various grain sizes from sub-
micron to rather large shot sizes of several millimeters or
larger.
72. The apparatus of any of the preceding claims 43 to
71, wherein the powder is silicon powder and/or metal and/or
ceramic and/or alloy and or oxide and/or any suitable
additive powder or shot having various grain sizes from sub-
micron to rather large shot sizes of several millimeters or
larger.
48
73. The apparatus of any of the preceding claims 43 to
72, wherein the powder forged is silicon powder and/or metal
and/or ceramic and/or alloy and/or oxide and/or any suitable
additive powder or shot having various grain sizes from sub-
micron to rather large shot sizes of several millimeters or
larger.
74. The apparatus of any of the preceding claims 43 to
73, wherein the forging apparatus comprises an anvil, a ram
and a mold for forging the crystal.
75. The apparatus of any of the preceding claims 43 to
74, wherein each part in the enclosure is independently
heated.
76. The apparatus of any of the preceding claims 43 to
75, wherein the enclosure is heated from all sides.
77. The apparatus of any of the preceding claims 43 to
76, wherein the enclosure is enclosed fully or partially in a
vacuum, reduced pressure or desired pressure chamber, and
wherein the chamber is filled with inert gas, reactive gas or
plasma gas.
78. Apparatus for plasma deposition comprising at least
one substrate, material for deposition on the substrate,
plasma generators or sources for the material, and a gas and
a powder input system, wherein the substrate is a hollow tube
or a solid body.
79. The apparatus of claim 78, wherein the substrate is
one or a plurality of substrates and wherein plasma heated
softened particles strike and stick to the substrate and form
layers as the one or the plurality of substrates are rotated
and/or translated.
80. The apparatus of claim 79, further comprising a
chamber surrounding the deposition, wherein the substrate
and/or the chamber are heated.
81. The apparatus of any of preceding claims 78 to 80,
further comprising gas inlet/outlet multiport and vacuum/vent
line coupled to the chamber.
49
82. The apparatus of any of preceding claims 78 to 81,
further comprising one or more plasma generators or plasma
sources, gas input system, powder input system, vacuum
chamber, with or without one or more chamber heating
elements, and the substrate with or without heating elements.
83. The apparatus of any of preceding claims 78 to 82,
further comprising one or more deposition ports in the
chamber.
84. The apparatus of any of preceding claims 78 to 83,
wherein substrate has rotation and/or translation mechanisms.
85. The apparatus of any of preceding claims 78 to 84,
wherein the chamber has rotation and/or translation
mechanisms.
86. The apparatus of any of preceding claims 78 to 85,
wherein the plasma assisted deposition of powder comprises
powder selected from a group consisting of silicon, silicon
compound comprising at least one atom of silicon, silicon and
germanium, Si x Ge1-x solid solution, silicon and Silicon
Carbide Si x(SiC)1-x, Silicon and silicon dioxide Si x(SiO2)1-x,
silicon and any ceramic, silicon and any oxide Si x(Oxide)1-x,
silicon and any metal Si x M1-x, Silicon and any alloy Si x A1-x,
any combination between themselves at temperature equal or
greater than room temperature and lower than the melting
point of one or more constituents of the deposited body R T <=
T <= T M.
87. The apparatus of any of preceding claims 78 to 86,
wherein~ the powder is deposited under vacuum, reduced
pressure, reactive atmosphere, inert gas, plasma, and any
combinations thereof.
88. The apparatus of any of preceding claims 78 to 87,
wherein the deposition is in inert atmosphere having desired
pressure.
89. The apparatus of any of preceding claims 78 to 88,
wherein the reactive atmosphere is plasma, reactive gases or
solid and a process of purification is administered.
50
90. The apparatus of any of preceding claims 78 to 89,
wherein a temperature in the chamber is between temperature
equal to or greater than room temperature and lower than the
melting point of one or more constituents of the deposited
body R T <= T <= T M.
91. The apparatus of any of preceding claims 78 to 90,
wherein the temperature in the chamber is about 400°C <= T
<=
800°C.
92. The apparatus of any of preceding claims 78 to 90,
wherein the temperature in the chamber is about 200°C <= T
<=
1000°C.
93. The apparatus of any of preceding claims 78 to 90,
wherein the temperature in the chamber is about 200°C <= T
<=
1200°C.
94. The apparatus of any of preceding claims 78 to 90,
wherein the temperature is smaller than 200°C or greater than
1200°C.
95. The apparatus of any of preceding claims 78 to 90,
wherein the temperature of the substrate is between
temperature equal to or greater than room temperature and
lower than the melting point of one or more constituents of
the deposited body R T <= T <= T M.
96. The apparatus of any of preceding claims 78 to 95,
wherein the temperature of the substrate is about 400°C <= T
<=
800°C.
97. The apparatus of any of preceding claims 78 to 95,
wherein the temperature of the substrate is about 200°C <= T
<=
1000°C.
98. The apparatus of any of preceding claims 78 to 95,
wherein the temperature of the substrate is about 200°C <= T
<=
1200°C.
99. The apparatus of any of preceding claims 78 to 95,
wherein the temperature is smaller than 200°C or greater than
1200°C.
100. Deposition apparatus for spraying of powder, powder
51
and organic and/or inorganic base material, powder and
gaseous material comprising a substrate, plurality of
sprayers positioned to spray at least one portion of one
side, and heating elements for heating the substrate at least
from one side.
101. The apparatus of claim 100, wherein the substrate
is rotated, and the substrate or slurry delivery tubes
translate the sprayer, and wherein spray heated powder is
heated and softened by heaters.
102. The apparatus of claim 101, wherein the powder is
selected from a group consisting of silicon, silicon compound
comprising at least one atom of silicon, silicon and
germanium, Si x Ge1-x solid solution, silicon and Silicon
Carbide Si x(SiC)1-x, silicon and silicon dioxide Si x(SiO2)1-x.
silicon and any ceramic, silicon and any oxide Si x(Oxide)1-x,
silicon and any metal Si x M1-x, silicon and any alloy Si x A1-x,
any combination between themselves at temperature equal to or
greater than room temperature and lower than the melting
point of one or more constituents of the deposited body R T <=
T <= T M.
103. The apparatus of any of preceding claims 100 to
102, wherein the substrate is tubular having any cross-
section, planar, flat, curved or have any desired shape or
form suitable for a particular application.
104. The apparatus of any of preceding claims 100 to
103, wherein the substrate comprises at least one element and
wherein the substrate is rotated and translated.
105. The apparatus of any of preceding claims 100 to
104, wherein the substrate is heated from inside and/or
outside, and wherein each substrate is independently heated.
106. The apparatus of any of preceding claims 100 to
105, wherein the sprayers are one or more sprayers and they
are oscillated, rotated and translated in relation to
themselves and to the substrate on which the deposition takes
place, and wherein each sprayer delivers same or different
52
compounds for spraying of a premixed compound or provides for
compound formation on a surface of the substrate.
107. The apparatus of any of preceding claims 100 to
106, wherein the apparatus is enclosed in vacuum, reduced
pressure or any process suitable chamber that has vacuum and
vent valves and gas delivery system.
108. The apparatus of any of preceding claims 100 to
107, wherein the deposition process is under vacuum, reduced
pressure, reactive gas, inert gas, plasma, and any
combinations thereof.
109. The apparatus of any of preceding claims 100 to
108, wherein the process is in inert atmosphere having
desired pressure.
110. The apparatus of any of preceding claims 100 to
109, wherein the reactive atmosphere is plasma, reactive
gases or solid, and wherein a process of purification is
administered.
111. The apparatus of any of preceding claims 100 to
110, wherein a temperature in the chamber and a substrate
temperature are between temperature equal to or greater than
room temperature and lower than the melting point of one or
more constituents of the deposited body R T <= T <= T M.
112. The apparatus of any of preceding claims 100 to
111, wherein the temperature in the chamber is about 400°C <=
T <= 800°C.
113. The apparatus of any of preceding claims 100 to
111, wherein temperature in the chamber is about 200°C <= T
<=
1000°C.
114. The apparatus of any of preceding claims 100 to
111, wherein temperature in the chamber is about 200°C <= T
<=
1200°C.
115. The apparatus of any of preceding claims 100 to
111, wherein temperature in the chamber is smaller than 200°C
or greater than 1200°C.
116. The apparatus of any of preceding claims 100 to
53
111, wherein temperature of the substrate is between
temperature equal to or greater than room temperature and
lower than the melting point of one or more constituents of
the deposited body R T <= T <= T M.
117. The apparatus of any of preceding claims 100 to
116, wherein temperature of the substrate is about 400°C <= T
<= 800°C.
118. The apparatus of any of preceding claims 100 to
116, wherein temperature of the substrate is about 200°C <= T
<= 1000°C.
119. The apparatus of any of preceding claims 100 to
116, wherein temperature of the substrate is about 200°C <= T
<= 1200°C.
120. The apparatus of any of preceding claims 100 to
116, wherein temperature of the substrate is smaller than
200°C or greater than 1200°C.
121. Apparatus for making tubular members having any
cross section, any length and any desired shape or form
comprising a body within or without a mold, a heater covering
part of the mold and a chamber fully or partially surrounding
at least one member and heating elements.
122. The apparatus of claim 121, wherein the chamber has
a gas inlet/outlet multiport and a vacuum/vent line.
123. The apparatus of claim 122, further comprising a
silicon or a silicon containing compound preform placed in
the heated chamber.
124. The apparatus of claim 123, wherein the preform is
rotated and a heated ring is translated along the preform for
sintering or melting the material and forming a solid
product.
125. The apparatus of any of preceding claims 121 to
124, wherein the chamber is a vacuum, low pressure or
pressure chamber.
126. The apparatus of any of preceding claims 121 to
125, wherein the chamber surrounding the member and the
54
heating elements is absent.
127. The apparatus of any of preceding claims 121 to
126, wherein the member is rotated and/or translated.
128. The apparatus of any of preceding claims 121 to
127, wherein the member is heated from inside and/or outside.
129. The apparatus of any of preceding claims 121 to
128, wherein the member is heated from outside by chamber
heaters and a gone heater for directional or non-directional
processing.
130. The apparatus of any of preceding claims 121 to
129, wherein the chamber has vacuum and/or vent valves.
131. The apparatus of any of preceding claims 121 to
130, wherein the chamber has a gas inlet/outlet multiport.
132. The apparatus of any of preceding claims 121 to
131, wherein the chamber has one or more plasma source
attached.
133. The apparatus of any of preceding claims 121 to
132, wherein the material processed is solid material,
powder, powder and organic or inorganic base material, powder
and gaseous material.
134. The apparatus of any of preceding claims 121 to
133, wherein the powder is selected from a group consisting
of silicon, silicon compound comprising at least one atom of
silicon, silicon and germanium, Si x Ge1-x solid solution,
silicon and Silicon Carbide Si x(SiC)1-x, Silicon and silicon
dioxide Si x(SiO2)1-x, silicon and any ceramic, silicon and any
oxide Si x(Oxide)1-x, silicon and any metal Si x M1-x, Silicon and
any alloy Si x A1-x, any combination between themselves at
temperature equal or greater than room temperature and lower
than the melting point of one or more constituents of the
deposited body R T <= T <= T M.
135. The apparatus of any of preceding claims 121 to
134, further comprising at least one substrate, plurality of
sprayers positioned to spray at least one portion of one
side, and heating elements for heating the substrate at least
55
from one side.
136. The apparatus of any of preceding claims 121 to
135, wherein the substrate is tubular having any cross-
section, planar or have any desired shape or form suitable
for a particular application.
137. The apparatus of any of preceding claims 121 to
136, wherein processing of the material is under vacuum,
reduced pressure, reactive gas, inert gas, plasma, and any
combinations thereof.
138. The apparatus of any of preceding claims 121 to
137, wherein processing of the material is in inert
atmosphere having desired pressure.
139. The apparatus of any of preceding claims 121 to
138, wherein the reactive atmosphere is plasma, reactive
gases or solid, and wherein a process of purification is
administered.
140. The apparatus of any of preceding claims 121 to
139, wherein the process temperature is between temperature
equal to or greater than room temperature and lower than a
melting point of one or more constituents of the deposited
body RT <= T <= TM .
141. The apparatus of any of preceding claims 121 to
140, wherein the process temperature is about 400°C <= T <=
800°C.
142. The apparatus of any of preceding claims 121 to
140, wherein the process temperature is about 200°C ltoreq. T ltoreq.
1000°C.
143. The apparatus of any of preceding claims 121 to
140, wherein the process temperature is about 200°C <= T <=
1200°C. The temperature is smaller than 200°C or greater than
1200°C.
144. The apparatus of any of preceding claims 121 to
143, wherein the temperature of the substrate is between
temperature equal or greater than room temperature and lower
than the melting point of one or more constituents of the
56
deposited body RT <= T <= TM.
145. The apparatus of any of preceding claims 121 to
144, wherein the temperature of the substrate is about 400°C
<= T <= 800°C.
146. The apparatus of any of preceding claims 121 to
144, wherein the temperature of the substrate is about 200°C
<= T <= 1000°C.
147. The apparatus of any of preceding claims 121 to
144, wherein the temperature of the substrate is about 200°C
<= T <= 1200°C.
148. The apparatus of any of preceding claims 121 to
144, wherein the temperature is smaller than 200°C or greater
than 1200°C.
149. The apparatus of any of preceding claims 121 to
148, wherein the member is tubular and has any cross section
such as round, elliptical, rectangular, polygonal or any
other shape.
150. The apparatus of any of preceding claims 121 to
149, wherein the member has uneven thickness pattern over its
entire surface.
151. The apparatus of any of preceding claims 121 to
150, wherein the member has different composition and density
over the entire body.
152. The apparatus of any of preceding claims 121 to
151, wherein the member has different composition and density
over its thickness.
153. The apparatus of any of preceding claims 121 to
152, wherein the composition and material properties is
layered over any dimension of the member such as length,
thickness, width, radius, etc.
154. A preform comprising a horizontal or vertical wafer
processing boat preform comprising a plurality of protrusions
for fabrication of slots for wafers and openings for gas flow
between the wafers to enable deposition of even thickness.
155. The preform of claim 154, wherein the wafer boat
57
preform is made of material selected from a group consisting
of silicon, silicon compound comprising at least one atom of
silicon, silicon and germanium, SixGe1-x solid solution,
silicon and silicon carbide Six(SiC)1-x Silicon and silicon
dioxide Six(SiO2)1-x, silicon and any ceramic, silicon and any
oxide Six(Oxide)1-x, silicon and any metal SixM1-x, Silicon and
any alloy SixA1-x, any combination between themselves, or made
from composite material, wherein 0 <= x <=1.
156. The preform of claim 154, wherein the wafer boat
preform is made by layering one or more of the following
materials: Si, silicon compound comprising at least one
silicon atom, SixGe1-x, SiC, Six (SiC)1-x, Six (SiO2)1-x.
Six (Oxide)1-x, SixM1-x, composite material, and any combination
or order between themselves, wherein 0 <= x <=1.
157. The preform of any of preceding claims 154 to 156,
wherein the wafer boat preform has closed ends at a base and
a top that are half or full discs and end discs having outer
diameters equal or greater than an outer diameter of the
wafer boat.
158. The preform of any of preceding claims 154 to 157,
wherein the end discs are solid discs.
159. The preform of any of preceding claims 154 to 158,
wherein the end discs have certain portions removed.
160. The preform of any of preceding claims 154 to 159,
wherein the wafer boat preform is fabricated from material
selected from a group consisting of silicon, silicon compound
comprising at least one silicon atom, silicon and germanium,
SixGe1-x solid solution, silicon and Silicon Carbide Six (SiC) 1-
x, Silicon and silicon dioxide Six (SiO2)1-x, . silicon and any
ceramic, silicon and any oxide Six(Oxide)1-x, silicon and any
metal SiXM1-x, Silicon and any alloy SixA1-x, any combination
between themselves, or made from composite material, wherein
0 <= x <=1.
161. The preform of any of preceding claims 154 to 160,
wherein the wafer boat preform is fabricated by heating and
58
melting or sintering a boat fabrication material using a mold
or prefabricated using a mold having desired shape and form,
or transferring it to the mold, solidifying it, cooling it
down at a desired cool-down regime, machining it to a desired
tolerance, and sintering it using process defined parameters.
162. The preform of any of preceding claims 154 to 161,
wherein the boat fabrication material is powder mixed with
organic and/or inorganic compounds for shaping purposes.
163. The preform of any of preceding claims 154 to 161,
wherein the boat fabrication material is solid material.
164. The preform of any of preceding claims 154 to 163,
wherein the melting or sintering is done in a vacuum chamber.
165. The preform of any of preceding claims 154 to 164,
wherein the melting or sintering is done under reduced or
high pressure of inert or reactive gas.
166. The preform of any of preceding claims 154 to 165,
wherein the reactive gas is mixture between atomic or charged
molecular state gas such as plasma gas and a neutral inert or
reactive gas.
167. The preform of any of preceding claims 154 to 167,
wherein the melting or sintering is preceded by one or more
steps of purging and purification.
168. Wafer boat preform comprising boat fabrication
material selected from a group consisting of silicon, silicon
compound comprising at least one silicon atom, silicon and
germanium, SixGe1-x solid solution, silicon and Silicon
Carbide Six (SiC) 1-X, Silicon and silicon dioxide SiX (SiO.,) 1-x.
silicon and any ceramic, silicon and any oxide Six(Oxide)1-x,
silicon and any metal SixM1-x, Silicon and any alloy SixA1-x,
any combination between themselves, or made from composite
material, wherein 0 <= x <=1.
169. The wafer boat preform of claim 168, wherein the
boat is made by pressing the boat fabrication material within
a die having desired shape and form, sintering, cooling it
down at a desired cool-down regime, and machining it to a
59
desired tolerance.
170. The wafer boat preform of claim 169, wherein the
boat fabrication material is powder mixed with organic and/or
inorganic compounds for shaping purposes.
171. The wafer boat preform of claim 169, wherein the
boat fabrication material is solid material.
172. The wafer boat preform of any of preceding claims
168 to 171, wherein the pressing is done in a vacuum chamber.
173. The wafer boat preform of any of preceding claims
168 to 171, wherein the pressing is done under reduced or
high pressure of inert or reactive gas.
174. The wafer boat preform of any of preceding claims
168 to 173, wherein the reactive gas is mixture between
atomic or charged molecular state gas such as plasma gas and
a neutral inert or reactive gas.
175. The wafer boat preform of any of preceding claims
168 to 174, wherein the melting or sintering is preceded by
one or more steps of purging and purification.
176. A process for fabrication of wafer boat preforms
consisting of providing a boat fabrication material selected
from a group consisting of silicon, silicon compound
comprising at least one silicon atom, silicon and germanium,
SixGe1-x solid solution, silicon and silicon carbide Six(SiC)1-
x, Silicon and silicon dioxide Six(SiO2)1x, silicon and any
ceramic, silicon and any oxide Six(Oxide)1-x, silicon and any
metal SixM1-x, Silicon and any alloy SixA1-x, any combination
between themselves, or made from composite material, wherein
0 <= x <=1.
177. The process of claim 176, further comprising
extruding the fabrication material within a die having
desired shape and form, sintering, cooling it down at a
desired cool-down regime, and machining it to a desired
tolerance.
178. The process of claim 177, wherein the boat
fabrication material is powder.
60
179. The process of claim 178, wherein the boat
fabrication material is powder mixed with organic or
inorganic materials.
180. The process of claim 178, wherein the boat
fabrication material is solid material.
181. The process of any of preceding claims 176 to 180,
wherein the pressing is done in a vacuum chamber.
182. The process of any of preceding claims 176 to 181,
wherein the pressing is done under reduced or high pressure
of inert or reactive gas.
183. The process of any of preceding claims 176 to 182,
wherein the reactive gas is a mixture between atomic or
charged molecular state gas such as plasma gas and a neutral
inert or reactive gas.
184. The process of any of preceding claims 176 to 183,
wherein the melting or sintering is preceded by one or more
steps of purging and purification.
185. Process for fabrication of a member having shape of
tube, plate, rod or any other shape or form consisting of
providing a material selected from a group consisting of
silicon, silicon compound comprising at least one silicon
atom, silicon and germanium, SixGe1-x solid solution, silicon
and silicon carbide Six(SiC)1-x, silicon and silicon dioxide
Six(SiO2)1-x, silicon and any ceramic, silicon and any oxide
SiX (oxide)1-x, silicon and any metal SixM1-x, Silicon and any
alloy SixA1-x, any combination between themselves, or made
from composite material, wherein 0 <= x <=1.
186. The process of claim 185, further comprising
heating and melting or sintering the material made with a
mold having desired shape and form, or transferring the
material to the mold, solidifying it, cooling it down at a
desired cool-down regime, removing the mold, machining it to
the desired tolerance, and sintering again.
187. The process of claim 186, wherein the material is
powder mixed with organic or inorganic materials.
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188. The process of claim 186, wherein the material is
solid material.
189. The process of any of preceding claims 185 to 188,
wherein the melting is done in a vacuum chamber.
190. The process of any of preceding claims 185 to 188,
wherein the melting or sintering is done under reduced or
high pressure of inert or reactive gas.
191. The process of any of preceding claims 185 to 190,
wherein the reactive gas is a mixture between atomic or
charged molecular state gas such as plasma gas and a neutral
inert or reactive gas.
192. The process of any of preceding claims 185 to 191,
wherein the melting or sintering is preceded by one or more
steps of purging and purification.
193. The process of any of preceding claims 185 to 192,
further comprising fabricating wafer boat members having
shape of tube, plate, rod or any other shape.
194. The process of any of preceding claims 185 to 193,
further comprising cutting the member or solidified boat in
two along medial lines, forming openings in cylindrical
walls, coating and fusing depositing material on top of base
material.
195. The process of any of preceding claims 185 to 194,
further comprising forming two boats by melting or molding or
casting or hot pressing and sintering the powder material.
196. The process of any of preceding claims 185 to 195,
further comprising forming slots in inward and/or outward
ribs or extensions, forming ends of the boats having
complementary steps to connect the boats end-to-end in an
axial stack or row.
197. Fabrication process comprising the steps of
providing with a powder or solid, heating the powder or the
solid to a plastic slate and forming a tube, plate or rod.
198. The process of claim 197, further comprising
forming a chamber liner and applying to a process chamber,
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forming a chemical vapor deposition (CVD) station, halving
formed tubes lengthwise, cutting windows, inward ribs or
extensions in the tubes, or the inner walls are slotted,
forming a vertical boat, and in parallel steps cutting
windows, plotting the boat and forming a horizontal boat.
199. The process of claim 198, wherein the powder is
mixed with organic or inorganic material.
200. The process of claim 198, wherein the powder is
selected from a group consisting of silicon, silicon compound
containing at least one atom of silicon, silicon and
germanium, SixGe1-x solid solution, silicon and Silicon
Carbide Six(SiC)1-x, Silicon and silicon dioxide Six(SiO2)1-x,
silicon and any ceramic, silicon and any oxide Six(Oxide)1-x,
silicon and any metal SixM1-x, Silicon and any alloy SixA1-x,
any combination between themselves, or made from composite
material, wherein 0 <= x <=1.
201. Wafer processing apparatus comprising a processing
chamber, wafer handling tools, wafer boat handling tools
consisting of one or more processing chambers, shields and
enclosures employing one or more members, and at least one
member made of material containing at least one atom of
silicon.
202. The apparatus of claim 201, wherein the at least
one member is of material selected from a group consisting of
silicon, silicon compound comprising at least one silicon
atom, silicon and germanium, SixGe1-x solid solution, silicon
and silicon carbide Six(SiC)1-x, silicon and silicon dioxide
Six(SiO2)1-x, silicon and any ceramic, silicon and any oxide
SiX (Oxide)1-x, silicon and any metal SixM1-x, Silicon and any
alloy SixA1-x, any combination between themselves, or made
from composite material, wherein 0 <= x <=1.
203. the apparatus of claim 202, wherein each chamber
comprises separate or a common gas delivery and venting
system, vacuum system, internal or external heating elements,
and cooled or not cooled vacuum shell.
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204. The apparatus of claim 203, wherein the vacuum
shell is partially or fully lined with material selected from
a group consisting of silicon, silicon compound comprising at
least one silicon atom, silicon and germanium, SixGe1-x solid
solution, silicon and Silicon Carbide Six(SiC)1-x, Silicon and
silicon dioxide Six(SiO2)1-x, silicon and any ceramic, silicon
and any oxide Six (Oxide)1-x, silicon and any metal SixM1-x,
Silicon and any alloy SixA1-x, any combination between
themselves, or made from composite material, wherein 0 <= x
<=1.
205. Wafer processing apparatus comprising plural
processing chambers, wherein at least one of the processing
chambers is a chemical vapor deposition (CVD) chamber
comprising one or more members consisting of material
selected from a group consisting of silicon, silicon compound
comprising at least one silicon atom, silicon and germanium,
SixGe1-x solid solution, silicon and Silicon Carbide Six(SiC)1-
x, Silicon and silicon dioxide. Six(SiO2)1-x, silicon and any
ceramic, silicon and any oxide Six(Oxide)1-x, silicon and any
metal SixM1-x, Silicon and any alloy SixA1-x, any combination
between themselves, or made from composite material, wherein
0 <= x <=1.
206. The apparatus of claim 205, wherein each CVD
chamber comprises separate or common gas delivery and venting
system, vacuum system, internal or external heating elements,
and cooled or not cooled vacuum shell.
207. The apparatus of claim 206, wherein the vacuum
shell is partially or fully lined with material selected from
a group consisting of silicon, silicon compound comprising at
least one silicon atom, silicon and germanium, SixGe1-x solid
solution, silicon and silicon carbide Six(SiC)1-x, silicon and
silicon dioxide Six(SiO2)1-x. silicon and any ceramic, silicon
and any oxide Six (Oxide)1-x, silicon and any metal SixM1-x,
Silicon and any alloy SixA1-x, any combination between
themselves, or made from composite material, wherein 0 <= x
64
<=1.
208. Wafer processing apparatus comprising plural
processing chambers, wherein at least one of the processing
chambers is an epitaxial chamber comprising one or more
members consisting of silicon, silicon compound comprising at
least one silicon atom, silicon and germanium, SixGe1-x solid
solution, silicon and Silicon Carbide Six(SiC)1-x, Silicon and
silicon dioxide Six(S1O2)1-x, silicon and any ceramic, silicon
and any oxide Six (Oxide) 1-x, silicon and any metal SixM1-x,
Silicon and any alloy SixA1-x, any combination between
themselves, or made from composite material, wherein 0 <= x
<=1.
209. The apparatus of claim 208, wherein each epitaxial
chamber comprises separate or common gas delivery and venting
system, vacuum system, internal or external heating elements,
and cooled or not cooled vacuum shell.
210. The apparatus of claim 209, wherein the vacuum
shell is partially or fully lined with material selected from
a group consisting of silicon, silicon compound comprising at
least one silicon atom, silicon and germanium, SixGe1-x solid
solution, silicon and Silicon Carbide Six(SiC)1-x, Silicon and
silicon dioxide Six(S1O2)1-x, silicon and any ceramic, silicon
and any oxide Six (Oxide) 1-x, silicon and any metal SixM1-x,
Silicon and any alloy SixA1-x, any combination between
themselves, or made from composite material, wherein 0 <= x
<=1.
211. Wafer processing apparatus comprising plural
processing chambers, wherein at least one of the processing
chambers is a thin film deposition chamber comprising one or
more members made of material selected from a group
consisting of silicon, silicon compound comprising at least
one silicon atom, silicon and germanium, SixGe1-x solid
solution, silicon and Silicon Carbide Six(SiC)1-x, Silicon and
silicon dioxide Six(S1O2)1-x, silicon and any ceramic, silicon
and any oxide Six(Oxide)1-x silicon and any metal SixM1-x,
65
Silicon and any alloy Si x A1-x, any combination between
themselves, or made from composite material, wherein 0 <= x
<=1.
212. The apparatus of claim 211, wherein the thin film
deposition chamber comprises separate or common gas delivery
and venting system, vacuum. system, internal or external
heating elements, cooled or not cooled vacuum shell.
213. The apparatus of claim 212, wherein the vacuum
shell is partially or fully lined with material selected from
a group consisting of silicon, silicon compound comprising at
least one silicon atom, silicon and germanium, Si x Ge1-x solid
solution, silicon and Silicon Carbide Si x (SiC)1-x, Silicon and
silicon dioxide Si x (SiO2)1-x, silicon and any ceramic, silicon
and any oxide Si x (Oxide)1-x, silicon and any metal Si x M1-x,
Silicon and any alloy Si x A1-x, any combination between
themselves, or made from composite material, wherein all
cases 0 <= x <=1.
214. Wafer processing apparatus comprising plural
processing chambers, wherein at least one of the processing
chambers is thin film removal chamber comprising one or more
members consisting of silicon, silicon compound comprising at
least one silicon atom, silicon and germanium, Si x Ge1-x solid
solution, silicon and Silicon Carbide Si x (SiC)1-x, Silicon
and silicon dioxide Si x (SiO2)1-x, silicon and any ceramic,
silicon and any oxide Si x (Oxide)1-x, silicon and any metal
Si x M1-x, Silicon and any alloy Si x A1-x, any combination between
themselves, or made from composite material, wherein all
cases 0 <= x <=1.
215. The apparatus of claim 214, wherein the thin film
removal chamber comprises separate or common gas delivery and
venting system, vacuum system, internal or external heating
elements, cooled or not cooled vacuum shell partially or
fully lined with silicon, silicon compound comprising at
least one silicon atom, silicon and germanium, Si x Ge1-x solid
solution, silicon and Silicon Carbide Si x (SiC)1-x, Silicon and
66
silicon dioxide Si x (SiO2)1-x, silicon and any ceramic, silicon
and any oxide Si x (Oxide)1-X, silicon and any metal Si x M1-x,
Silicon and any alloy Si x A1-x, any combination between
themselves, or made from composite material, wherein 0 <= x
<=1.
216. The apparatus of any of the preceding claims 201 to
215, wherein one of the chambers is a main chamber connected
with other chambers directly or via one or more gate valves.
217. The apparatus of any of the preceding claims 201 to
216, wherein one or more chambers is vacuum, low pressure or
desired pressure chamber.
218. The apparatus of any of the preceding claims 201 to
217, wherein one or more chambers has at least one internal
or external heater.
219. The apparatus of any of the preceding claims 201 to
218, wherein one or more chambers has at least one partial or
complete heat shield.
220. A chemical vapor deposition (CVD) system comprising
a vacuum vessel with cooled or not cooled chamber with single
or double wall, a robot handling arm having elements for
wafer or wafer boat delivery/removal that forms a vacuum
tight seal when the chamber is loaded, a wafer tray/boat
containing one or more wafers resting on the wafer boat
delivery/removal arm, a shield surrounding the wafer
tray/boat and an inside portion of the wafer handling arm,
process gas delivery system with all respective valves
attached to the chamber and having a delivery tube extending
into a wafer area, inert gas delivery system with all
respective valves attached to the chamber and having a
delivery tube with or without diffuser extending into the
wafer area, vacuum pumping system connected to the chamber,
and an inside or outside heater directing heat into the
process area.
221. The system of claim 220, wherein the process area
comprises one or more members of material selected from a
67
group consisting of silicon, silicon compound comprising at
least one silicon atom, silicon and germanium, Si x Ge1-x solid
solution, silicon and Silicon Carbide Si x (SiC)1-x, Silicon and
silicon dioxide Si x (SiO2)1-x, silicon and any ceramic, silicon
and any oxide Si x (Oxide)1-x, silicon and any metal Si x M1-x,
Silicon and any alloy Si x A1-x, any combination between
themselves, or made from composite material, wherein 0 <= x
<=1.
222. The system of claim 221, wherein the CVD system is
vertical, horizontal or of any suitable position from -90° to
+90°.
223. The system of any of the preceding claims 220 to
222, wherein the wafer boat is of solid connected members
made from material selected from a group consisting of
silicon, silicon compound comprising at least one silicon
atom, silicon and germanium, Si x Ge1-x solid solution, silicon
and Silicon Carbide Si x (SiC)1-x, Silicon and silicon dioxide
Si x (SiO2)1-x, silicon and any ceramic, silicon and any oxide
Si x (Oxide)1-x, silicon and any metal Si x M1-x, silicon and any
alloy Si x A1-x, any combination between themselves, or made
from composite material, wherein 0 <= x <=1.
224. The system of any of the preceding claims 220 to
222, wherein the wafer boat is of modular elements made from
material selected from a group consisting of silicon, silicon
compound comprising at least one silicon atom, silicon and
germanium, Si x Ge1-x solid solution, silicon and silicon
carbide Si x (SiC)1-x, Silicon and silicon dioxide Si x (SiO2)1-x,
silicon and any ceramic, silicon and any oxide Si x (Oxide)1-x,
silicon and any metal Si x M1-x, Silicon and any alloy Si x A1-x,
any combination between themselves, or made from composite
material, wherein 0 <= x <=1.
225. The system of any of the preceding claims 220 to
224, wherein the wafer boat comprises one or more slots for
supporting wafers spaced at appropriate distances.
226. The system of any of the preceding claims 220 to
68
225, wherein the wafers in the boat are positioned so there
is no other material between the wafers other than vacuum or
any gas present in a processing part of the chamber.
227. The system of any of the preceding claims 220 to
226, wherein the wafer boats comprise slots for wafer support
and susceptors between the wafers for improved temperature
distribution over wafer surfaces resulting in more uniform
deposited layer thickness and composition.
228. The system of any of the preceding claims 220 to
227, wherein the susceptor in the boat is part of the wafer
boat.
229. The system of any of the preceding claims 220 to
227, wherein the susceptor in the boat is inserted after or
prior to the boat being made, or together with the wafer
loading.
230. The system of any of the preceding claims 220 to
229, wherein the boat is modular.
231. The system of any of the preceding claims 220 to
230, wherein each module of the boat comprises support for
one or more wafers.
232. The system of any of the preceding claims 220 to
231, wherein each module comprises support for one or more
wafers separated by inserted or built in susceptors.
233. The system of any of the preceding claims 220 to
232, wherein the susceptors are full body or have cuts to
allow wafer only insertion/removal handling.
234. The system of any of the preceding claims 220 to
233, wherein the boat is made from modular parts connected
via chemical or mechanical bonding.
235. The system of any of the preceding claims 220 to
234, wherein the boat has round, elliptical, polygonal or any
other cross section.
236. The system of any of the preceding claims 220 to
235, wherein the boat has one or more elements at each end
for mechanical strength during handling.
69
237. The system of any of the preceding claims 220 to
236, wherein end parts of the boat are modules.
238. The system of any of the preceding claims 220 to
237, wherein all parts of the boat are made from same or
different materials.
239. A single wafer processing system for chemical vapor
deposition (CVD), epitaxial deposition, thin film
deposition/removal or any other wafer processing for chips
comprising a vacuum vessel with cooled or not cooled chamber
wall and with single or double wall, connected directly or
through at least one gate valve to a chamber with multistage
wafer handling mechanism for wafer delivery/removal, a shield
surrounding the wafer processing area, process and inert gas
delivery system with all respective valves attached to the
chamber, a delivery tube extending into a wafer area, vacuum
pumping system connected to the chamber, inside and/or
outside heater directing heat into the process area.
240. The system of claim 239, wherein the process area
comprises one or more members consisting of silicon, silicon
compound comprising at least one silicon atom, silicon and
germanium, Si x Ge1-x solid solution, silicon and silicon
carbide Si x (SiC)1-x, silicon and silicon dioxide Si x (SiO2)1-x,
silicon and any ceramic, silicon and any oxide Si x (Oxide)1-x,
silicon and any metal Si x M1-x, silicon and any alloy Si x A1-x,
any combination between themselves, or made from composite
material, wherein 0 <= x <= 1.
241. The system of claim 240, further comprising vacuum
pumping systems and gas delivery systems for both chambers.
242. The system of claim 241, further comprising heating
elements located around or in the chambers.
243. The system of claim 242, further comprising chamber
connection ports connecting a chamber to additional chambers
for transferring or removing the wafers.
244. The system of any of the preceding claims 239 to
243, wherein the process chamber is a CVD chamber.
70
245. The system of any of the preceding claims 239 to
243, wherein the process chamber is an epitaxial deposition
chamber.
246. The system of any of the preceding claims 239 to
243, wherein the process chamber is a thin film
deposition/removal chamber.
247. The system of any of the preceding claims 239 to
243, wherein the process chamber is a wafer process chamber.
248. The system of any of the preceding claims 239 to
247, wherein the process chamber has any cross section and
height.
249. The system of any of the preceding claims 239 to
248, wherein the system is vertical, horizontal or has any
suitable position from -90° to +90°.
250. The system of any of the preceding claims 239 to
249, wherein the members are made from material selected from
a group consisting of silicon, silicon compound comprising at
least one silicon atom, silicon and germanium, Si x Ge1-x solid
solution, silicon and silicon carbide Si x (SiC)1-x, silicon and
silicon dioxide Si x (SiO2)1-x, silicon and any ceramic, silicon
and any oxide Si x (Oxide)1-x, silicon and any metal Si x M1-x,
silicon and any alloy Si x A1-x, any combination between
themselves, or made from composite material, wherein 0 <= x
<=1.
251. The system of any of the preceding claims 239 to
250, wherein the members are solidly connected by chemical or
mechanical bonding.
252. The system of any of the preceding claims 239 to
251, wherein the members are made of material selected from a
group consisting of silicon, silicon compound comprising at
least one silicon atom, silicon and germanium, Si x Ge1-x solid
solution, silicon and silicon carbide Si x (SiC)1-x, silicon and
silicon dioxide Si x (SiO2)1-x, silicon and any ceramic, silicon
and any oxide Si x (Oxide)1-x, silicon and any metal Si x M1-x,
silicon and any alloy Si x A1-x, any combination between
71
themselves, or made from composite material, wherein 0 <= x
<=1, and wherein the members are modular.
253. The system of any of the preceding claims 239 to
251, wherein the members are made of material selected from a
group consisting of silicon, silicon compound comprising at
a least one silicon atom, silicon and germanium, Si x Ge1-x solid
solution, silicon and Silicon Carbide Si x (SiC)1-x, Silicon and
silicon dioxide Si x (SiO2)1-x, silicon and any ceramic, silicon
and any oxide Si x (Oxide)1-x, .silicon and any metal Si x M1-x,
Silicon and any alloy Si x A1-x, any combination between
themselves, or made from composite material, wherein 0 <= x
<=1, and comprise one or more slots for wafers' support to
optimize the process.
254. The system of any of the preceding claims 239 to
253, wherein the wafer processing chamber has a susceptor
next to the wafer for improved temperature distribution over
the wafer surface that results in more uniform deposited
layer thickness and composition.
255. The system of any of the preceding claims 239 to
254, wherein the susceptor in the process chamber is part of
the chamber.
256. The system of any of the preceding claims 239 to
255, further comprising a wafer delivery arm, wherein the
wafer delivery arm is made in full or partially from material
selected from a group consisting of silicon, silicon compound
comprising at least one silicon atom, silicon and germanium,
Si x Ge1-x solid solution, silicon and silicon carbide Si x (SiC)1-
x, silicon and silicon dioxide Si x (SiO2)1-x, silicon and any
ceramic, silicon and any oxide Si x (Oxide)1-x, silicon and any
metal Si x M1-x, Silicon and any alloy Si x A1-x, any combination
between themselves, or made from composite material, wherein
0 <= x <=1.
257. The system of any of the preceding claims 239 to
256, wherein the susceptor is a full body or has certain cuts
to allow wafer only insertion/removal handling.
72
258. The system of any of the preceding claims 239 to
257, wherein all chamber parts are made in full or partially
from material selected from a group consisting of silicon,
silicon compound comprising at least one silicon atom,
silicon and germanium, Si x Ge1-x solid solution, silicon and
silicon carbide Si x (SiC)1-x, silicon and silicon dioxide
Si x (SiO2)1-x, silicon and any ceramic, silicon and any oxide
Si x (Oxide)1-x, silicon and any metal Si x M1-x, silicon and any
alloy Si x A1-x, any combination between themselves, or made
from composite material, wherein 0 <= x <=1, and are from
modular parts connected via chemical or mechanical bonding or
by assembling without bonding.
259. The system of any of the preceding claims 239 to
258, wherein the chamber has round, elliptical, polygonal or
any other applicable cross section.
260. The system of any of the preceding claims 239 to
259, further comprising end parts of the wafer processing
chamber, wherein the end parts are modules.
261. The system of any of the preceding claims 239 to
260, wherein all parts of the boat are made from the same or
different materials.
262. Epitaxial/CVD chamber body comprising epitaxial/CVD
chambers made in full or partially from material selected
from a group consisting of silicon, silicon compound
comprising at least one silicon atom, silicon and germanium,
Six Ge1-x solid solution, silicon and silicon carbide Si x (SiC)1-
x, silicon and silicon dioxide Si x (SiO2)1-x, silicon and any
ceramic, silicon and any oxide Si x (Oxide)1-x, silicon and any
metal Si x M1-x, silicon and any alloy Si x A1-x, any combination
between themselves, or made from composite material, wherein
0 <= x <= 1.
263. The chamber body of claim 262, further comprising
bodies, an optical window for wafer radiation and at least
one opening for wafer and gas delivery/removal.
264. The chamber body of claim 263, wherein the bodies
73
are bonded together along side edges forming the chamber, a
wafer heater accesses wafers in the chamber through the
window, and a wafer lifting and rotating mechanism port and
assembly supports wafers through an opposite window.
265. The chamber body of any of the preceding claims 262
to 264, wherein the chambers have suitable wall thicknesses
and at least one infrared window at each side, hollow
interior and at least one gate opening for connection to a
wafer supply and process gas supply chamber and a gas
exhaust.
266. The chamber body of any of the preceding claims 262
to 265, wherein the chamber is made from materials selected
from a group consisting of silicon, silicon compound
comprising at least one silicon atom, silicon and germanium,
Si x Ge1-x solid solution, silicon and silicon carbide Si x (SiC)1-
x, silicon and silicon dioxide Si x (SiO2)1-x, silicon and any
ceramic, silicon and any oxide Si x (Oxide)1-x, silicon and any
metal Si x M1-x, Silicon and any alloy Si x A1-x, any combination
between themselves, or made from composite material, wherein
0 <= x <=1.
267. The chamber body of any of the preceding claims 262
to 266, wherein the epitaxial chamber body comprises a single
body made by pressing of material, machining it from inside
and out in its green state, purifying the said body at a
certain temperature by immersing it in a chemically reactive
gas, plasma or liquid for certain period of time, sintering
the said body at appropriate temperature determined by its
composition, final machining of the said body, if needed, to
meet the specifications of the epitaxial deposition process.
268. The chamber body of claim 267, wherein the finished
body is subjected to thin film deposition such as chemical
vapor deposition, plasma enhanced deposition, or other
suitable deposition method for better finish on the inside
and outside.
269. The chamber body of any of the preceding claims 262
74
to 266, wherein the epitaxial chamber body comprises a single
body made by casting of the material, machining it from
inside and out in its green state, purifying said body at a
certain temperature by immersing it in a chemically reactive
gas, plasma or liquid for certain period of time, sintering
the said body at appropriate temperature determined by its
composition, final machining of the said body, if needed, to
meet the specifications of the epitaxial deposition process.
270. The chamber body of claim 269, wherein the finished
body is subjected to thin film deposition such as chemical
vapor deposition, plasma enhanced deposition, or other
suitable deposition method for better finish on the inside
and outside.
271. The chamber body of any of the preceding claims 262
to 266, wherein the epitaxial chamber comprises upper and
lower parts made by casting to shape the material, machining
the parts, purifying the said body at a certain temperature
by immersing it in a chemically reactive gas, plasma or
liquid for certain period of time, sintering the said body at
appropriate temperature determined by its composition,
joining the parts by chemical and/or mechanical means, final
machining of the said body, if needed, to meet the
specifications of the epitaxial deposition process.
272. The chamber body of claim 271, wherein the finished
body is subjected to thin film deposition such as chemical
vapor deposition, plasma enhanced deposition, or other
suitable deposition method for better finish on the inside
and outside.
273. The chamber body of any of the preceding claims 262
to 266, wherein the epitaxial chamber comprises single part
or upper and lower parts made by casting or cold or hot
pressing to shape to shape the material, machining the parts,
purifying the said body at a certain temperature by immersing
it in a chemically reactive gas, plasma or liquid for
certain period of time, sintering the said body at
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appropriate temperature determined by its composition,
joining the parts by chemical and/or mechanical means, final
machining of the said body, if needed, to meet the
specifications of the epitaxial deposition process.
274. The chamber body of claim 273, wherein the finished
body is subjected to thin film deposition such as chemical
vapor deposition, plasma enhanced deposition, or other
suitable deposition method for better finish on the inside
and outside.
275. The chamber body of any of the preceding claims 262
to 266, wherein the epitaxial chamber comprises one part or
upper and lower parts made by cold or hot pressing of a block
of the material, machining the chamber, purifying the said
body at a certain temperature by immersing it in a chemically
reactive gas, plasma or liquid for certain period of time,
sintering the said body at appropriate temperature determined
by its composition, joining the parts by chemical and/or
mechanical means, final machining of the said body, if
needed, to meet the specifications of the epitaxial
deposition process.
276. The chamber body of claim 275, wherein the finished
body is subjected to thin film deposition such as chemical
vapor deposition, plasma enhanced deposition, or other
suitable deposition method for better finish on the inside
and outside.
277. The chamber body of any of the preceding claims 262
to 266, wherein the epitaxial chamber comprises one part or
upper and lower parts made by cold or hot extrusion of a
block or a desired shape of the material, machining the
chamber, purifying the said body at a certain temperature by
immersing it in a chemically reactive gas, plasma or liquid
for certain period of time, sintering the said body at
appropriate temperature determined by its composition,
joining the parts by chemical and/or mechanical means, final
machining of the said body, if needed, to meet the
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specifications of the epitaxial deposition process.
278. The chamber body of claims 277, wherein the
finished body is subjected to thin film deposition such as
chemical vapor deposition, plasma enhanced deposition, or
other suitable deposition method for better finish on the
inside and outside.
279. The chamber body of any of the preceding claims 262
to 266, wherein the epitaxial chamber comprises one part or
upper and lower parts made by plasma spraying of the
material, and forming a chamber to a desired shape, machining
the chamber, purifying the said body at a certain temperature
by immersing it in a chemically reactive gas, plasma or
liquid for certain period of time, sintering the said body at
appropriate temperature determined by its composition,
joining the parts by chemical and/or mechanical means, final
machining of the said body, if needed, to meet the
specifications of the epitaxial deposition process.
280. The chamber body of claim 279, wherein the finished
body is subjected to thin film deposition such as chemical
vapor deposition, plasma enhanced deposition, or other
suitable deposition method for better finish on the inside
and outside.
281. The chamber body of any of the preceding claims 262
to 266, wherein the epitaxial chamber comprises one part or
upper and lower parts made by spraying of organic or
inorganic based slurry of the material and forming a chamber
to a desired shape, machining the chamber, purifying the said
body at a certain temperature by immersing it in a chemically
reactive gas, plasma or liquid for certain period of time,
sintering the said body at appropriate temperature determined
by its composition, joining the parts by chemical and/or
mechanical means, final machining of the said body, if
needed, to meet the specifications of the epitaxial
deposition process.
282. The chamber body of claim 281, wherein the finished
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body is subjected to thin film deposition such as chemical
vapor deposition, plasma enhanced deposition, or other
suitable deposition method for better finish on the inside
and outside.
283. The chamber body of any of the preceding claims 262
to 282, wherein the chamber comprises two separate halves
joined at one plane followed by final machining.
284. The chamber body of any of the preceding claims 262
to 282, wherein the chamber comprises a single body machined
from a solid block material.
285. The chamber body of any of the preceding claims 262
to 282, wherein the chamber comprises a single body made by
method of plasma spraying followed by final machining.
286. The chamber body of any of the preceding claims 262
to 282, wherein the chamber comprises a single body made by
method of slurry spraying.
287. The chamber body of any of the preceding claims 262
to 282, wherein the chamber comprises a single body machined
by method of casting, forging or extrusion followed by
sintering and final machining.
288. The chamber body of any of the preceding claims 262
to 287, wherein the chamber has a vacuum, reduced pressure or
desired pressure chamber.
289. The chamber body of any of the preceding claims 262
to 288, wherein the chamber has a liner for a vacuum, reduced
pressure or desired pressure chamber for wafer processing
applications.
290. The chamber body of any of the preceding claims 262
to 289, wherein the chamber is made of modular pieces stacked
on top of each other or bonded by mechanical or chemical
means.
291. The chamber body of any of the preceding claims 262
to 290, further comprising an optical window, wherein the
optical window is from same or suitable material stacked on
the chamber or bonded by mechanical or chemical means.
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292. The chamber body of any of the preceding claims 262
to 291, wherein the chamber has one or more optical windows
depending on the process requirements.
293. The chamber body of any of the preceding claims 262
to 292, further comprising a gas delivery system for
delivering process and inert gases into the chamber attached
to the chamber or to the chamber wall.
294. The chamber body of any of the preceding claims 262
to 293, further comprising gas delivery members exposed to
the process atmosphere made from the chamber material or
chamber lining material.
295. The chamber body of any of the preceding claims 262
to 294, further comprising a wafer delivering/removing arm
to/from the chamber made from the chamber material or chamber
lining material.
296. The chamber body of any of the preceding claims 262
to 295, further comprising a susceptor and a member that
either holds the wafer or surrounds the wafer from the sides,
the top or the bottom, as required by the process made from
the chamber material or chamber lining material.
297. The chamber body of any of the preceding claims 262
to 296, further comprising a reduced pressure chamber
surrounding the epitaxial /CVD chamber made in full or
partially from material selected from a group consisting of
silicon, silicon compound comprising at least one silicon
atom, silicon and germanium, Si x Ge1-x solid solution, silicon
and silicon carbide Si x(SiC)1-x, silicon and silicon dioxide
Si X(SiO2)1-x, silicon and any ceramic, silicon and any oxide
Si x(Oxide)1-x, silicon and any metal Si X M1-x, silicon and any
alloy Si x A1-x, any combination between themselves, or made
from composite material, wherein 0 <= × <=1.
298. The chamber body of any of the preceding claims 262
to 297, further comprising a body, an optical window for
wafer radiation and at least one opening for wafer and gas
delivery/removal.
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299. The chamber body of any of the preceding claims 262
to 298, further comprising an outer chamber of vacuum,
reduced pressure or desired pressure as required by the
process.
300. The chamber body of any of the preceding claims 262
to 299, wherein the chamber comprises one or more optical
windows depending on the process requirements.
301. The chamber body of any of the preceding claims 262
to 300, wherein the chamber has gas delivery system for
delivering process and inert gases into the chamber attached
to the chamber or to the chamber wall.
302. A single wafer processing system for CVD, epitaxial
deposition, thin film deposition/removal or any other wafer
processing for a chip comprising a vacuum vessel with cooled
or not cooled chamber wall with single or double wall,
connected directly or through at least one gate valve to a
chamber with multistage wafer handling mechanism for wafer
delivery/removal, a shield surrounding the wafer processing
area, process and inert gas delivery system with all
respective valves attached to the chamber and having a
delivery tube extending into a wafer area, vacuum pumping
system connected to the chamber, inside and/or outside heater
directing heat into the process area employing one or more
members made from material selected from a group consisting
of silicon, silicon compound comprising at least one silicon
atom, silicon and germanium, Si x Ge1-x solid solution, silicon
and silicon carbide Si x(SiC)1-x, silicon and silicon dioxide
Si X(SiO2)1-x, silicon and any ceramic, silicon and any oxide
Si X(Oxide)1-x, silicon and any metal Si x M1-x, Silicon and any
alloy Si X A1-x, any combination between themselves, or made
from composite material, wherein 0 <= × <=1, employing at
least
one epitaxial chamber.
303. Process for fabrication of silicon/silicon
alloy/composite/silicon compound having at least one silicon
atom members comprising processing high purity quartz or
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fused silica material and forming different structures for
processing wafers.
304. The process of claim 303, wherein the forming
further comprises making silicon boats having desired
mechanical properties.
305. The process of claim 304, wherein the processing
comprises forging, extrusion, plasma and hot substrate powder
deposition, slurry spray and slurry casting, silicon/silicon
alloy/composite/silicon compound having at least one silicon
atom casting and directional solidification for the
fabrication of the members.
306. The process of any of the preceding claims 303 to
305, wherein the processing comprises silicon/silicon
alloy/composite/silicon compound having at least one silicon
atom powder pressing and/or forging and extrusion.
307. The process of any of the preceding claims 303 to
306, wherein the forming comprises fabrication of epitaxial
reactors, chemical vapor deposition (CVD) chambers, CVD
chamber liners, tubing, and combinations thereof.
308. The process of any of the preceding claims 303 to
306, wherein the forming comprises fabrication of
silicon/silicon alloy/composite/silicon compound having at
least one silicon atom members selected from a group
consisting of wafer boats for horizontal and vertical wafer
processing furnaces and deposition chambers, epitaxial
reactors, lining for CVD chambers, epitaxial reactors and
other wafer processing tools, tubing having any form or cross
section shape, and combinations thereof.
309. The process of any of preceding claims 303 to 308,
wherein the processing comprises pressing silicon/silicon
alloy/composite/silicon compound having at least one silicon
atom material at room temperature or at an elevated
temperature in vacuum or in a controlled atmosphere,
outgassing, removing oxygen, nitrogen, water vapor and other
undesired gases before/during/after pressing of the material.
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310. The process of any of the preceding claims 303 to
309, wherein the pressing comprises pressing to a near shape
of a part being fabricated.
311. The process of any of the preceding claims 303 to
309, wherein the pressing comprises pressing into a raw
material for further processing into desired members.
312. The process of any of the preceding claims 303 to
311, wherein the material comprises a powder selected from a
group consisting of silicon, silicon compound having at least
one silicon atom, silicon and germanium, silicon and metal,
silicon and silicon carbide, silicon and ceramic, silicon and
a suitable element or compound and combinations thereof.
313. The process of any of the preceding claims 303 to
312, wherein processing the material comprises providing
silicon powder, silicon compounds having at least one atom of
silicon, silicon based alloys or composites having a desired
grain size in a pressing chamber.
314. The process of any of the preceding claims 303 to
313, wherein the processing further comprises treating with
gas treatment and/or vacuuming the residual gas and then
pressing the material.
315. The process of any of the preceding claims 303 to
314, wherein the processing comprises pressing at a
temperature as low as room temperature or as high as a
softening point of the lowest melting point constituent.
316. The process of any of the preceding claims 303 to
315, wherein the processing further comprises sintering the
pressed part in vacuum or in appropriate gaseous atmosphere
and fabricating very dense materials with predetermined
hardness.
317. The process of claim 316, further comprising
tailoring various parts for various applications by adjusting
a grain size of the material, wherein smaller grain sizes are
used for making parts with higher fracture strength and vice-
versa.
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318. The process of any of the preceding claims 303 to
317, further comprising machining the parts made before the
sintering, sintering, and after the sintering allowing the
parts to yield near shape for using as sintered parts or for
subjecting sintered parts to a further final machining.
319. The process of any of the preceding claims 303 to
318, wherein the processing comprises processing at pressures
of up to 800,000 psi or higher.
320. The process of any of the preceding claims 303 to
319, wherein the processing comprises processing at
temperatures of suitable for the material during pressing and
sintering and varying the temperatures corresponding to a
composition of the material.
321. The process of any of the preceding claims 303 to
320, wherein the processing comprises processing at
temperatures between 300°C and 1350°C.
322. The process of any of the preceding claims 303 to
320, wherein the processing comprises processing at
temperatures up to about 300°C and greater than about 1350°C
corresponding to the material being processed and desired
properties of the members.
323. The process of any of the preceding claims 303 to
322, wherein the forming comprises press-shaping solid
silicon of single crystal or polycrystalline material into
various parts, heating the silicon to a desired temperature
and obtaining appropriate plastic properties.
324. The process of claim 323, wherein the press-shaping
comprises shaping by forging or extrusion of the
silicon/silicon alloy/composite/silicon compound having at
least one silicon atom material.
325. The process of claims 303 and 324, wherein the
pressing and shaping of the material is done before, during
or after sintering of the material.
326. The process of any of the preceding claims 303 to
325, further comprising selecting a desired material
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corresponding to a plasticity of the material for determining
grain size and fracture strength.
327. The process of any of the preceding claims 303 to
326, wherein the pressing comprises several steps of hot
pressing the material.
328. The process of any of the preceding claims 303 to
327, wherein the processing comprises extrusion followed by
forging and/or high pressure annealing.
329. The process of any of the preceding claims 303 to
305, wherein the shaping of the material further comprises
imbedding stronger material in the part being made for
reinforcement purposes.
330. The process of claim 329, wherein the imbedding
comprises providing a strong layer within the part or forming
the stronger layer on an outer or inner surface of the part
and fabricating parts having desired strength pattern.
331. Member forming process comprising providing plasma
heated or not heated silicon powder material or non plasma
heated or non-heated silicon powder material, introducing the
material into a chamber, directing the material towards a
heated substrate and depositing on the substrate.
332. The process of claim 331, wherein the chamber is a
vacuum, low pressure, normal pressure or high-pressure
chamber.
333. The process of claim 332, wherein the powder
deposition comprises depositing silicon only, or silicon and
other material particles and reinforcing silicon structure
without changing chemical behavior or material particles that
change the properties of silicon and forming a silicon alloy
or solid solution.
334. The process of any of the preceding claims 331 to
333, wherein the material is selected from a group consisting
of Ge, Si x G1-x, SiC, silicon based materials, silicon compound
having at least one silicon atom, ceramics, suitable elements
or compounds and doping and/or reinforcing the material.
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335. The process of any of the preceding claims 331 to
334, wherein the depositing comprises depositing layers
corresponding to a temperature of the substrate, wherein the
deposited layers have different densities and thicknesses,
sintering the layers and forming very dense material having
desired fracture strengths.
336. The process of any of the preceding claims 331 to
335, further comprising injecting the non-plasma heated
powder or not heated powder material in the chamber and
directing towards a hot substrate within a heated or non-
heated controlled atmosphere or vacuum chamber.
337. The process of any of the preceding claims 331 to
336, further comprising heating the powder material to a
desired temperature on its way to and from the substrate,
adhering grains of the material to the substrate and/or other
previously deposited grains on the substrate and forming a
deposited body.
338. The process of any of the preceding claims 331 to
337, wherein a density of the deposited body is proportional
to grain size, grain temperature at impact and substrate
temperature.
339. The process of any of the preceding claims 331 to
338, wherein the member is a silicon/silicon
alloy/composite/silicon compound having at least one silicon
atom member having shapes selected from a group consisting of
rod, tube having any cross-section and shape, any chamber
looking type shape with one or more gates, and combinations
thereof.
340. The process of any of the preceding claims 331 to
339, wherein the substrate is heated up to a softening point
of silicon material.
341. The process of any of the preceding claims 331 to
340, wherein an optimal temperature is between about 800°C to
about 1350°C.
342. The process of any of the preceding claims 331 to
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341, wherein the temperatures are less than about 800°C and
more than about 1350°C.
343. The process of any of the preceding claims 331 to
342, wherein the sintering of the silicon/silicon
alloy/composite/silicon compound having at least one silicon
atom members is done in situ, or after machining, shaping or
joining of the members with other parts made by the same or
different process.
344. The process of any of the preceding claims 331 to
343, wherein the sintering temperature corresponds to
chemical composition of the parts and their applications.
345. Chemical vapor deposition (CVD) process comprising
deposition of silicon and/or silicon/composite and/or silicon
alloy and/or silicon compound having at least one silicon
atom materials on a substrate, reinforcing deposited layers
without changing the chemical behavior of a surface of
interest and forming members for various applications.
346. The process of claim 345, wherein the deposition of
the silicon/silicon alloy/composite/silicon compound having
at least one silicon atom material on the substrate comprises
providing a suitable substrate having a sticking coefficient
to deposited material.
347. The process of claim 46, wherein the material is
selected from a group consisting of silicon nitrides,
graphite, metal silicates, ceramics, silicon, silicon
compound having at least one silicon atom, and substances
suitable as substrate for particular applications, and
combinations thereof.
348. The process of any of the preceding claims 345 to
347, wherein the deposition comprises depositing the material
at variable temperatures of the substrate and variable
pressures during the deposition process.
349. The process of any of the preceding claims 345 to
348, wherein the deposited layers have initial thicknesses
that after sintering results in very dense material having
86
desired thickness for a particular application.
350. The process of any of the preceding claims 345 to
349, wherein the members are silicon/silicon
alloy/composite/silicon compound having at least one silicon
atom members having shapes selected from a group consisting
of rod, tube having desired cross-section, shape and size,
plate or any wafer processing chamber suitable type shape,
having one or more gates leading inside the chamber.
351. Fabrication process for forming members comprising
mixing a powder with a high purity liquid chemical compound
and forming a slurry, spraying or casting the slurry, and
forming a desired body.
352. The process of claim 351, wherein the spraying
comprises depositing the slurry on a substrate that rotates
and/or translates.
353. The process of claim 352, wherein the substrate
comprises any material that does not react with or
contaminate the slurry.
354. The process of claim 353, further comprising either
incorporating the material in the fabricated body or curing
and removing liquids and separating the material during or
after deposition of the slurry.
355. The process of any of the preceding claims 351 to
354, further comprising roughly machining the cured articles
before a bake-out process is implemented.
356. The process of any of the preceding claims 351 to
355, further comprising implementing a bake out process and
completely removing chemical substances such as binders and
sintering the silicon/silicon alloy/composite powder/silicon
compound having at least one silicon atom made member.
357. The process of any of the preceding claims 351 to
356, further comprising machining the members into desired
shapes following the bake-out process.
358. The process of any of the preceding claims 351 to
357, wherein the slurry deposition and/or casting is
87
conducted in vacuum or controlled gas atmosphere chamber
employing one or more heaters.
359. The process of any of the preceding claims 351 to
358, wherein the curing and sintering is conducted in the
same or in a different chamber.
360. The process of any of the preceding claims 351 to
359, wherein the silicon/silicon alloy/composite/silicon
compound having at least one silicon atom member have shapes
of rod, round tube, rectangular tube, plate or any wafer
processing chamber suitable type shape.
361. Fabrication process comprising casting to shape
silicon/silicon alloy/composite/silicon compound comprising
at least one silicon atom material or re-melting and casting
solid silicon and forming various made parts.
362. The process of claim 361, further comprising
providing a high purity mold made from easily removable
material that does not react with silicon/silicon
alloy/composite/silicon compound, filling the mold, with shot,
powder or small chunks of the material to be melted.
363. The process of claim 362, wherein the material for
casting is melted in a separate container and transferred
into the mold after melting.
364. The process of claim 363, further comprising
removing oxygen, nitrogen, water vapor, and other
contaminants before the melting process.
365. The process of claim 364, wherein the forming the
member comprises forming silicon/silicon
alloy/composite/silicon compound member having a shape
selected from a group consisting of rod, round tube, tube or
any other shape or form.
366. Fabrication process comprising gelcasting
silicon/silicon alloy/composite/silicon compound having at
least one silicon atom material and forming a body.
367. The process of claim 366, further comprising
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converting the material in powder having desired grain size.
368. The process of claim 367, further comprising
suspending the powder in a monomer solution which is
polymerized in a mold to form a rigid polymer/solvent gel.
369. The process of any of the preceding claims 366 to
368, further comprising adding organic or inorganic
substances to the powder/polymer binder, triggering a
polymerization process.
370. The process of any of preceding claims 366 to 369,
wherein the polymerization process is triggered at desired
process conditions.
371. The process of any of the preceding claims 366 to
370, wherein the process comprises up to 10-20 weight %
polymer.
372. The process of any of the preceding claims 366 to
371, wherein the percentage is as low as few weight percent
and over 20 weight percent.
373. The process of any of the preceding claims 366 to
372, further comprising drying and removing a solvent portion
after removing the fabricated part from the mold.
374. The process of any of the preceding claims 366 to
372, further comprising wherein the solution is aqueous or
non-aqueous.
375. The process of claim 374, wherein the non-aqueous
solution comprises 50-55 volume o of powder with balance
being a dispersion solution.
376. The process of any of preceding claims 366 to 375,
wherein the solution comprises about 10% dispersant such as
Rohm & Haas Triton X-100, or N-100 Dupont dibasic ester (DBE)
or ICI Americas Solsperse 2000 in dibutil phtalate (DBP) and
90 % gelcasting premix, wherein the premix includes 10-30
volume % of monomers such as trifunctional trimethilpropane
triacrylate (TMPTA) and difunctional 1,6 hexanediol
diacrilate (HDODA) from Hoechst Celanese, 0.5 to 10 volume
of dybenzoil peroxide initiator with the rest being either
89
DBA, DBP or other suitable solvent.
377. The process of any of preceding claims 366 to 376,
further comprising hardening of the material mass in the
mold, spraying onto a substrate having desired process
temperature, and fabricating the member,
378. The process of any of preceding claims 366 to 377,
wherein the spraying comprises spraying in vacuum or desired
gaseous atmosphere.
379. The process of any of the preceding claims 366 to
378, wherein the spraying comprises spraying the slurry or
spraying various components onto the substrate, mixing,
reacting and hardening into the desired shape.
380. The process of any of preceding claims 366 to 379,
wherein the fabrication comprises continuous feeding onto a
beltline type apparatus.
381. The process of any of preceding claims 366 to 380,
further comprising hardening, drying and sintering as part of
the continuous process.
382. The process of any of the preceding claims 366 to
381, wherein the feed comprises already made mixture of the
material.
383. The process of any of the preceding claims 366 to
382, wherein the feed comprises mixing material at a feeding
point.
384. Fabrication process for fabricating large size
silicon/silicon alloys/composites/silicon compound having at
least one silicon atom material into a member by directional
solidification in an open or closed mold/container containing
the material to be solidified.
385. The process of claim 384, wherein the member
fabricated is a plate, rod, tube or any other shape.
386. The process of claim 385, wherein the process is
conducted in a vacuum or controlled atmosphere chamber.
387. The process of any of the preceding claims 384 to
386, further comprising removing oxygen, nitrogen, water
90
vapor, and other possible contaminants are taken before
melting the material.
388. The process of any of the preceding claims 384 to
387, wherein the member made may has shapes selected from a
group consisting of plate, rod, tube or any other shape or
form.
