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Patent 2498608 Summary

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(12) Patent Application: (11) CA 2498608
(54) English Title: SYSTEM FOR CONTROLLING MODE CHANGES IN A VOLTAGE DOWN-CONVERTER
(54) French Title: SYSTEME DE COMMANDE DES CHANGEMENTS DE MODE DANS UN CONVERTISSEUR ABAISSEUR DE TENSION
Status: Dead
Bibliographic Data
(51) International Patent Classification (IPC):
  • G11C 7/00 (2006.01)
  • G05F 1/10 (2006.01)
  • G05F 3/02 (2006.01)
  • G05F 3/16 (2006.01)
  • G05F 3/20 (2006.01)
  • G11C 5/14 (2006.01)
(72) Inventors :
  • RIVA REGGIORI, RICCARDO (Italy)
  • TASSAN CASER, FABIO (Italy)
  • SIVERO, STEFANO (Italy)
(73) Owners :
  • ATMEL CORPORATION (United States of America)
(71) Applicants :
  • ATMEL CORPORATION (United States of America)
(74) Agent: SMART & BIGGAR
(74) Associate agent:
(45) Issued:
(86) PCT Filing Date: 2003-09-10
(87) Open to Public Inspection: 2004-03-25
Availability of licence: N/A
(25) Language of filing: English

Patent Cooperation Treaty (PCT): Yes
(86) PCT Filing Number: PCT/US2003/028441
(87) International Publication Number: WO2004/025657
(85) National Entry: 2005-03-10

(30) Application Priority Data:
Application No. Country/Territory Date
TO2002A000794 Italy 2002-09-12
10/407,646 United States of America 2003-04-03

Abstracts

English Abstract




A voltage down-converter system, with a stand-by mode and an active mode, for
a memory device with the following components. A charge node (68) is
configured to receive a charge. A first transistor (54) has a first gate and
the first transistor is configured to supply a load current to the memory
device. A first switch (58) is coupled to the charge node and the first gate,
the first switch being configured to apply the charge in the charge node to
the first gate during transition from stand-by to active modes. A second
transistor (66) is coupled to the first gate and configured to bias the first
transistor to an inactive state during stand-by mode. A second switch (64) is
coupled to the first gate and the second transistor, the second switch being
configured to apply a voltage difference at the second transistor to the first
gate during the stand-by mode.


French Abstract

L'invention concerne un convertisseur abaisseur de tension, comprenant un mode de réserve et un mode actif, pour une mémoire comprenant les composants suivants : un noeud de charge (68) conçu pour recevoir une charge ; un premier transistor (54) comprenant une première grille, ce premier transistor étant conçu pour fournir un courant de charge à la mémoire ; un premier commutateur (58) couplé au noeud de charge et à la première grille, ce premier commutateur étant conçu pour appliquer la charge du noeud de charge à la première grille pendant la transition entre le mode de réserve et le mode actif ; un second transistor (66) couplé à la première grille, ce second transistor étant conçu pour polariser le premier transistor à un état inactif pendant le mode de réserve ; un second commutateur (64) couplé au premier transistor et au second transistor, ce second commutateur étant conçu pour appliquer, au niveau du second transistor, une différence de tension à la première grille pendant le mode de réserve.

Claims

Note: Claims are shown in the official language in which they were submitted.



What is claimed is:

1. A voltage down-converter system, having a stand-by mode and an active
mode, for a memory device comprising:
a charge node configured to receive a charge;
a first transistor having a first gate, the first transistor coupled to the
memory
device and configured to supply a load current to the memory device;
a first switch coupled to the charge node and the first gate, the first switch
configured to apply the charge in the charge node to the first gate during a
transition from
stand-by to active modes;
a second transistor coupled to the first gate and configured to bias the first
transistor to an inactive state during stand-by mode; and
a second switch coupled to the first gate and the second transistor, the
second
switch configured to apply a voltage difference to the first gate during the
stand-by mode.

2. The system of claim 1 further comprising:
a third transistor coupled to the charge node and configured to be biased by
the second transistor and to charge the charge node during stand-by mode.

3. The system of claim 2 further comprising:
a third switch coupled to the first transistor and to the memory device and
configured to prevent load current flow through the first transistor to the
memory device
during stand-by mode and allow load current flow through the first transistor
to the memory
device during active mode.

4. The system of claim 3 wherein:
the first transistor and the second transistor are each coupled to an external
power supply.

5. The system of claim 4 wherein:
the first transistor is coupled to an internal voltage source.

6. The system of claim 4 wherein:
the charge node is a capacitor.

7. A voltage down-converter system, having a stand-by mode and an active
mode, for a memory device comprising:

6


a first charge node configured to receive a first charge;
a first comparator coupled to the first charge node and configured to receive
a
signal and while receiving the signal to compare the first charge to ground
and discharge the
first charge node towards ground;
a second charge node configured to receive a second charge; and
a second comparator coupled to the second charge node and configured to
receive the signal and while receiving the signal to compare the second charge
to a reference
voltage and charge the second charge towards the reference voltage.

8. The system of claim 7 further comprising:
a first transistor having a gate, the first transistor coupled to the first
charge
node and coupled to the memory device and configured to supply a load current
to the
memory device.

9. The system of claim 8 further comprising:
a first switch coupled to the gate and the first node.

10. The system of claim 9 wherein:
the first switch is configured to turn off at the end of the transition from
active mode to stand-by mode and electrically couple the gate and the first
node.

11. The system of claim 10 further comprising:
a second switch coupled to the first transistor and the memory device and
configured to turn on at the end of the transition from active mode to stand-
by mode.

12. The system of claim 11 wherein:
the first charge node is coupled to a second transistor.

13. The system of claim 12 wherein:
the second charge node is coupled to a capacitor.

14. The system of claim 13 wherein:
the signal is transmitted to the system during the transition from active mode
to stand-by mode.

15. The system of claim 14 wherein:
the signal lasts for approximately 300 ms.

16. A method of transitioning from an active mode to a stand-by mode in a
voltage down-converter system for a memory device comprising:
receiving a to-stand-by signal during the transition from active to stand-by
modes; and

7



comparing a drive transistor gate voltage to a first predetermined node
voltage and discharge the gate toward ground as long as the gate voltage is
greater than the
predetermined node voltage.

17. The method of claim 16 further comprising:
comparing the voltage at a second predetermined node to a predetermined
voltage and charge the second predetermined node towards the predetermined
voltage.

18. The method of claim 17 further comprising:
decoupling a driver transistor from a load circuit.

19. The method of claim 18 further comprising:
switching off a driver transistor.

8


Description

Note: Descriptions are shown in the official language in which they were submitted.




CA 02498608 2005-03-10
WO 2004/025657 PCT/US2003/028441
SYSTEM FOR CONTROLLING MODE CHANGES IN A VOLTAGE DOWN-CONVERTER
BACKGROUND OF THE INVENTION
1. Field of the Invention
The invention relates to voltage converters. More particularly, the invention
relates
to the management and control of an on-chip voltage down-converter that steps
down an
external power supply to a lower, internal power supply for memory devices.
2. The State of the Art
Semiconductor systems involve circuitry requiring a broad range of power.
Microprocessors typically operate at higher voltage levels than memories, for
example. In
order to make an external power source compatible with both a microprocessor
and its
memory, for example, the voltage from the external power supply must be down-
converted.
FIG. 1 illustrates one example of a prior art voltage down-converter.
Amplifier 2
drives the gate of p-channel metal-oxide semiconductor (MOS) transistor 4. The
source of
transistor 4 connects to external power source 6 and the drain of transistor 4
connects to load
circuit 8. The voltage across load circuit 8 drops as current consumption in
circuit 8
increases, and when the voltage drops below that of reference generator
circuit 10 then
amplifier 2 lowers the voltage across the gate of transistor 4. Transistor 4
increases in
conductivity as its gate voltage decreases and consequently supplies load
circuit 8 with
current.
FIG. 2 illustrates another example of a prior art voltage down-converter. N-
channel
MOS transistor 20 has a low threshold voltage and is configured as a source
follower. In
one example driver transistor 20 is a natural MOS built on a substrate without
a special
implant and with a very large aspect ratio (W/L). Replica transistor 22 is
coupled to driver
transistor 20 and has a smaller aspect ratio than transistor 20. Amplifier 24
and resistors 26
complete a control loop with transistor 22. Amplifier 24 controls the gate of
transistor 22
and keeps the voltage at node 28 in a desired range. Consequently transistor
20 provides
current through node 30 when voltage at node 28 drops below a predetermined
level.
1



CA 02498608 2005-03-10
WO 2004/025657 PCT/US2003/028441
FIG. 3 illustrates a more detailed version of the voltage converter in FIG. 2.
Replica
circuit 40 has a similar function to that of transistor 22 in FIG. 2. Stand-by
circuit 42 and
active circuit 44 perform the function of driver transistor 20 in FIG. 2. The
prior art voltage
converter in FIG. 3 has two operation modes: stand-by and active. In stand-by
mode,
current leakage to the load is very low. In active mode the transistors are on
and provide up
to the maximum level of current.
One problem with the aforementioned designs is the need for perfect matching
among the driver and reference parts. Another problem is that temperature and
process
variations must be compensated by the replica circuit. Also, a reference
circuit is always on
since the follower needs a bias to operate. Finally, problems arise in the
prior voltage down-
converters while switching between active and stand-by mode. The prior voltage
down-
converters may fail to achieve a good response to the current step. The prior
voltage down-
converters may also have dangerous voltage spikes while switching modes.
BRIEF DESCRIPTION OF THE INVENTION
The invention provides a system to manage the switching between active to
stand-by
transition and stand-by to active transition. The system to manage switching
between active
and stand-by and stand-by to active modes has two transitions. The first
transition is the
stand-by to active transition. In one embodiment, the load current for the
internal, stepped-
down power is initially furnished by a load capacitor, acting as a charge
tank, on the internal
power node. Prior to entering active mode, a replica transistor for the active
mode is biased
to charge a capacitor. When the voltage at the internal power supply node
drops to a
determined level, a switch biases the driver transistor to the node with the
capacitor that was
charged by the replica transistor, thus activating the driver transistor and
increasing the
current to the load circuit.
The second transition of the system is the active to stand-by transition. The
transition is indicated by the fall of an enable signal. In one embodiment, a
delay signal is
interjected between the fall of the enable signal and the time at which stand-
by mode is
entered. The delay signal provides time for a driver transistor gate to be
discharged and a
node to be charged towards stand-by values. Comparators charge and discharge
the gate and
node as long as the delay signal is high. A switch disconnects the driver
transistor from the
power supply node when the enable signal falls so that current stops flowing
from the driver
2



CA 02498608 2005-03-10
WO 2004/025657 PCT/US2003/028441
transistor while the comparator discharges the gate of the driver transistor.
The system
enters stand-by mode at the end of the delay signal.
BRIEF DESCRIPTION OF THE FIGURES
FIG. 1 is a schematic diagram of a prior art voltage down-converter.
FIG. 2 is a schematic diagram of a prior art voltage down-converter.
FIG. 3 is a more detailed schematic diagram of the prior art voltage down-
converter
in FIG. 2
FIG. 4 is a schematic diagram of one part of a voltage down-converter system
for
transition from stand-by to active modes.
FIG. 5 is a diagram of timing signals used for transition from active to stand-
by
modes.
FIG. 6 is a detailed schematic diagram of the system in FIG. 4 including
circuitry for
transition from active to stand-by modes.
FIG. 7 is a flow diagram illustrating a method of transitioning from active to
stand-
by modes according to one embodiment of the invention.
DETAILED DESCRIPTION OF THE INVENTION
Persons of ordinary 'skill in the art will realize that the following
description of the
present invention is only illustrative and not in any way limiting. Other
embodiments of this
invention will be readily apparent to those skilled in the art having benefit
of this disclosure.
FIG. 4 is a schematic diagram illustrating one embodiment of the invention.
Circuit
50 replaces active circuit 44 of FIG. 3 and is provided to illustrate the
transition from stand-
by to active mode. Transistor 52 serves as a replica transistor while
transistor 54 serves as a
driver. External power supply 56 couples to both transistors 52 and 54. In
stand-by mode,
switches 58, 60 and 62 are off, while switch 64 is on. One of ordinary skill
in the art will
appreciate that a switch conducts electricity when on and does not conduct
electricity when
off.. Transistor 52 is biased by current fiom transistor 66 and charges node
68, which in one
embodiment includes capacitor 70, to approximately 2V. In one embodiment
capacitor 70 is
400pF. Node 72 is kept one threshold lower, or approximately 800 mV. The gate
of
transistor 54 is therefore 800mV lower than its source, which is coupled to
internal voltage
source VCC 74, and therefore off. Additionally, switch 62 prevents current
from flowing
3



CA 02498608 2005-03-10
WO 2004/025657 PCT/US2003/028441
through transistor 54 to the load circuit (not shown). In one embodiment,
transistors in the
invention are p-channel MOS transistors.
Switches 58, 60 and 62 are turned on and switch 64 turns off in order to
transition to
active mode. Transistor 54 is decoupled from node 72 and is coupled to node
68, which is at
approximately 2V. Transistor 54 activates and may conduct current through the
now
coupled transistor 76 to the load circuit (not shown). With switches 58, 60
and 62 on, and
switch 64 off, circuit 50 is in active mode.
FIG. 5 illustrates a timing diagram with enable, delay and enable-delayed
signals.
Enable signal 78 is low during stand-by mode 80. Enable signal 78 rises to
communicate the
transition from stand-by mode 80 to active mode 82. In the prior art, a
falling enable signal
would communicate the transition from active to stand-by mode. The invention
provides a
delay before transitioning from active to stand-by modes. In one embodiment,
the delay is
approximately 300ns. Delay signal 84 is high during to-stand-by mode 86 and
off in stand-
by mode 88. Enable-delayed signal 90 rises at the beginning of active mode 82
and remains
high until the end of to-stand-by mode 86.
FIG. 6 is a schematic diagram illustrating one embodiment of the invention.
FIG. 6 is
a more detailed illustration of the circuit illustrated in FIG. 4. Circuit 100
replaces active
circuit 44 of FIG. 3 and is provided to illustrate the transition from active
to stand-by mode.
Transistor 102 serves as a replica transistor while transistor 104 serves as a
driver. External
power 106 couples to both transistors 102 and 104. In' active mode, switches
108, 110 and
112 are on, while switch 114 is off. When the circuitry (not shown) associated
with system
100 receives a low input from enable signal 78 (shown in FIG. 5), switches
108, 110, and
112 turn off. Switch 114 is off during active mode 82 and remains off until
the fall of
enable-delayed signal 90 (i.e., switch 114 remains off until stand-by mode
88), at which time
switch 114 turns on. Current from transistor 116 biases transistor 102. Node
118 is
disconnected from the gate of transistor 104.
Comparators 120 and 122 are activated during to-stand-by mode 86 (shown in
FIG.
5) with delay signal 84. With switches 110 and 114 off during to-stand-by mode
86,
comparator 120 compares the voltage at node 124 with node 126 and discharges
node 124
toward ground as long as the potential at node 124 is greater than that at
node 126.
Comparator 122 charges node 118 toward a predetermined value, which in one
embodiment
is approximately 2V. When enable-delayed signal 90 falls at the end of to-
stand-by mode 86
4



CA 02498608 2005-03-10
WO 2004/025657 PCT/US2003/028441
(see FIG. 5), switch 114 turns on and couples the gate of transistor 104 to
node 126 and
shuts off transistor 104.
FIG. 7 is a flow diagram illustrating the method of transitioning from active
to stand-
by modes. In block 150, receiving a to-stand-by signal during the transition
from active to
stand-by modes. In block 155, decoupling a driver transistor from a load
circuit. In block
160, comparing a drive transistor gate voltage to a first predetermined node
voltage and
discharging the gate toward ground as long as the gate voltage is greater than
the
predetermined node voltage. In block 165, comparing the voltage at a second
predetermined
node to a predetermined voltage and charging the second predetermined node
towards the
predetermined voltage. In block 170, switching off the driver transistor.
While embodiments and applications of this invention have been shown and
described, it would be apparent to those skilled in the art that many more
modifications than
mentioned above are possible without departing from the inventive concepts
herein. The
invention, therefore, is not to be restricted except in the spirit of the
appended claims:
5

Representative Drawing
A single figure which represents the drawing illustrating the invention.
Administrative Status

For a clearer understanding of the status of the application/patent presented on this page, the site Disclaimer , as well as the definitions for Patent , Administrative Status , Maintenance Fee  and Payment History  should be consulted.

Administrative Status

Title Date
Forecasted Issue Date Unavailable
(86) PCT Filing Date 2003-09-10
(87) PCT Publication Date 2004-03-25
(85) National Entry 2005-03-10
Dead Application 2006-09-11

Abandonment History

Abandonment Date Reason Reinstatement Date
2005-09-12 FAILURE TO PAY APPLICATION MAINTENANCE FEE

Payment History

Fee Type Anniversary Year Due Date Amount Paid Paid Date
Application Fee $400.00 2005-03-10
Registration of a document - section 124 $100.00 2005-06-06
Owners on Record

Note: Records showing the ownership history in alphabetical order.

Current Owners on Record
ATMEL CORPORATION
Past Owners on Record
RIVA REGGIORI, RICCARDO
SIVERO, STEFANO
TASSAN CASER, FABIO
Past Owners that do not appear in the "Owners on Record" listing will appear in other documentation within the application.
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Document
Description 
Date
(yyyy-mm-dd) 
Number of pages   Size of Image (KB) 
Abstract 2005-03-10 1 63
Claims 2005-03-10 3 110
Drawings 2005-03-10 4 63
Description 2005-03-10 5 273
Representative Drawing 2005-03-10 1 7
Cover Page 2005-05-24 1 43
Assignment 2005-06-06 5 221
PCT 2005-03-10 2 87
Assignment 2005-03-10 4 106
Prosecution-Amendment 2005-03-10 10 340
Correspondence 2005-05-19 1 27