Note: Descriptions are shown in the official language in which they were submitted.
kCV BY = l O- 15-99 : ~ U : U~'_1~1 : ~ 51-9251 101 SA9ART X~ B I GGAK : # 2
c~. H'? ~ 1.~~5 p I=iLE, P~l-fP~ THiS AMENDED
.wT; ~J ga; o~, ~~~3 TRANSLATION
Ri~''E~I~:Eb ~$EE'a
Descrip~ior~.
La;ef device
'='a invrent,~,or~ relates t~~ a laser dev,~c~e :~aT~~nc at _east one
li=iear array cf !.aser diodes .
Laser diode z.r_rays are, for exøir;ple, K~owri f=om R.. ra;~l,
~Jpto~le~Yrp~u,:. Ser'u~~onduct~~_- Com.po:.ien4s. '~eubn.ez_
~tla~~~x SiCr'2'~tE=:'.,, ~-,.~ t?O.r~..~.0~1., G. a. Te'a~I:2~ Stll''t;~ar~
:l~~~i,
paged 2 ~: , ',? C ~; . S-~ch laser- d.ode az rGyS ac:~lieve h-~ fh radio.
ticn
pc.~we~s, :xigi-: r:wd~.a=ica dews~fiies and ef=ir~ienc,~es.
~'_>_ xnary applic.at_ons, fcr exarvple fox ,w~ateriai:3 prc~ces.sing or
for prir.ver apa:.a.ca~ions, powers of 10 'n7-1G k~r a4 pv~ae,r
dta:r.si.ties be~'h~een 0. 1 and 10 T~zw/c~.2 are needed o the artiole
t~o b~ °~poe~.~. ~n order to ~.ee~ these reqW cements, sGlid-
stat~ lasers ;e.g. hd:'1AG, efv, ) aze cu_wer.tiy preferably
~,-:sedG 5'acn twcv-stare SysLe~S, ~,ahiGh reed =o ~e optically
p1'~h'.p~u '~5w.rg ~l~S~ ~32T.~:;~ :.~r semicord~cwo= laSe~B, drE
teGi:~j~_c~A~cg_cal_y el aborate and achp_eve corversior efficiencies
~~F cz~ly c =c, 15~. Further, lamp-ptA~p~ed sy5~er~as require a great
dea-~ ;~f mai~te~arce.
h=tn,~ugh diode lasers achieve the z-eu.uzsir_e pcGVer aensiti.es,
t:re rttaximum p~,wer ixl a sr~atiC.l'.~y ccherent mode As never:.heless
Orllyl'J.2 irJ Or, .ir. ~p_...L~)_r~a;,.lrJTi W-i~}'1 sEmiCOridL:~~:W
axCl~il'_flers
r
d.b t? t y. trl7 .
-1-
CA 02286774 1999-10-15
RC4' L3Y _, _ _ _ _ _ _ _ _ _ . __ _ 1 (i_ 15-99 : 1 Q : 0~~All1 ~ __. .. ._.
. ._ ~~'4~= i l -~ (1.1~ W1_flfv'(' & y3I GEAR : ~ :3
Kxlow 1 user devices zaith a re5~~x~.a~or are aesc;~'Abed ir: ~5-A-
4~5?~.?gl and EP-;: .c3 323.
T~:~e ~k~~ect of the pr.eseT.t i:we~zticn is t~~erefore to dei>elcp a
lace device vaitil ~n~hich. an increaseci rraxi~r4aa power ca:~. be
aczi ved v; r: a spa~iaily cc~~erent ~ncd.e.
Th~.s~ object is a::r_e ed by a ~,aser device accordinG ~.~, ,._
a i ~,
1.
Ir_ t~zs laser device, decoupled laser d=~od?s Gnrefexacl,~
sir:y e-mcde laser diodes , ~n:ic~~ are ver~J stable, are
I
ad.va~tag'evusiy used.
Furt~e~,, it -s particularly adva:atageous if t.ha pa°si°ue p-
~a:~ax
wacra~r~:ide stru;:Yure cap: '~e ,~rociucea mcnolithical-~ y on a single
rlcula~ing surface (rrahich car. be cccled during ope_rat=cn) , b~~
r:~eaz:~ :~i wrier: ~:oth hi.':~ aW gnmer:t accuracy and alsJ - in
part~c~a?ar because of the uniform temperaure d'_sfi,-~bution aT~
___
the ~empezature s~ab;~lity - high stability of the wa~reguides
c.ai~ ;~e achie~red.
Tn~e ~avegu_de structure -_s prefQrably produced in a planar
uyi~r d waveguide tech:~clogy te. y . SiC~ en ~i, diffused, icn~
exc.h need, prec~_p~ tatea .;lass; .
For urther cpt_r,~ization, p'_ar:a.r ,wer.ses a::d greting structures
:nay .e a~7plied tc the maur_ti::g surface in straichtforc~ls,r~a
_°aS,"~ on in aGidJ.t=C~. t0 the wa~rea~~iCie 5t-r'uG~;~~re.
Ad'ra~~g~O~.IS ~e'~lrien,ert5 4f tk'~e ~3.52'y de~.rice ~onStZt;~ue the
sub c~ matter of the subclair.~s.
CA 02286774 1999-10-15
RCS Bf:, , ___ __ __.___ 1()-15-~:3 :1l):Ua3.q41 ~ __...._..
_~'~':>4.3'2p1'107-> S;49RRT &,131GG~1R:~ 4
In a~ part-~ct~.l~,rly p'~eferred mxbodimer,t cf yhe laser d.ev~.,~e,
the aser dzode ax'ray has sv~n~l~~-;node ia.ser :~i~des and an
:~pti ~al de~T:.ce with brancred wa;regvides vs prPtr'~.ued. _aaer
_ad~_~tion of th.e ir_di~ridual laser diod~acan ne coup~.ed into
t~.e utter. Tre opt'-Ca''A arrangement co~~bines laser- radiation.
;:f tye ir:~di~Tidual ,_aser diodes, arary4d next to ozle ar_ot.r.er,
i~zto a runner s:~al ler char, t~~e nu~i:~eL of laser diodes, ~ r.
part~cv'_ar,~y into a single cutyat ,~~avegv.~:.de.
r__ mother p..artiYu~~a.rJ..w~ pie=erred e:abodimen-, t~~.e laser diode
arra~ ,gas mulYimr~~de -_a.ser di;,de3, in pa.rticuJ_ar ~~aide-stride
'_ase d~odes, and 1 ikewise an apt-ca'w cie~r'~ce with k;ranched
wave~,uides, x:vto ~n~h =c': laser radiarior. ef ~h.e individual laser
d.iod~s can be t~ou~led arid va~:icn~ cernb=ries this :.aser =ad_at~.on.
==-:to i a s~',aliei n'smber than ~'~.e _~_ur.,bex~ of laser dzc~des,
part :.~ular int~ a single cutp;~t w;~ve~uide. The single-zncde
nra ve aides have, a- the ends facing tYie laser diode array,
~a~.~e~ str~:ctures whw«h. transfer t:~e laser_ radio~icn cf the
wndi~~i;~t~a'~ la4er d~_ades as adiabata.ca__l~r a'~ possible i nto .'i.e
resp Ictively al lccate~.: s:~ngle-:~~ode v:aveHuide. Arra;~s of
mu~.t ~nede wide-stripe '_asers adUar;ta~~'eous_y aJ.J_ow very hint
s~.mf.~.ce newer de:~sw ties .
Ire b~tl: of t=.e cases fi.entioned aocve,- the cptica.l device i:as a
pref~ra,;o'~y binary tree-like branch structure. It i;, txowever,
also ncssible to -ase an~~ ether sT:.l b~~a:~oh strut~tuxe.
Tr_ a ~furtY~~er preferred refinement ~,f ire lasar cie;~Ace, the
outp~t ~~aveg~,zide o= ~Na~reg~,z.J_des eras cr ~.ave in addition a DFB
('-~~Sl~rl.b~:teC'~ F22d'lJaCk) gratiJl~x struCT~'..:rE? fOY'
iOnCf=thdll''AC'~~! ?TlOde
ae~.eq Lion.
'ire ~nve=aion describe: a~u~.~e .allows production va2~.i~~h is
~ornp c~ and, in parti.cr:=ar, favc;rable in terms of c.~ae,~ing
._ .j _
CA 02286774 1999-10-15
RCV 13Y_ _ , ___ __ __ .___1() ~25-'~a :1(>:0:3A~1 : 9,4!3'?01107.-> SwIAhT t~
B1GGAR:# p
_ _ _ _ . _ _ __. .. ._. . _ _. .__. .__. . _. . . __ _ _
tec'~yo'~c~gy, ct power =aser d~_odes wi ~h spatially ar.d
te:np~xal~.yi ccherer_t outp',;~t and therefore ma.:imai power
.-?er_s~r.=.Fs, for Fxaznple for materials pr:~cessir.g, pr=~ter
to ch ~ logy and. medical ap~:_~ icatiors . The planar or~twcal
.peso a.tar couples ~:~e am=scion, c~f the :.n~.wvidual emitters
tlas r d-'~c~..es) coheren.t~!y into a sinnle-mode ~;aveguide at th_a
cuCp't of rye resonator.
A''1 a~~vantageous e~~bodimerit Uf the =nvet~tion is represented in
~igule 7. Refirermr_ts c~f the laser device will ~~e e~;plained in
more~deta.:~a ;nri~h refex'°n~:e to Fi ores ~ t.n ~ i.~
'~ ~- . n ~w:a~ch:
Fir-a~e i si:ows a schematic =epresentati~~r_ :.f a laser diode
I
axray ~n an a}ite-nal reson~.~or,
..'_g~;ie ~ shows a sche:rati,~ representation of a lace= d~_ode
i
a=rah in a:~ exterz:al resonator wa.tka a mode-~i~~.-eying devi~r.e,
F'igu~e 3 shows a schemar~.c: representatzor. of a laser dEVice,
~ig~zzte 4 shows a sc~~~er.!atic representation: of a laser d.ev~co,
Flc~u~e 5 st'!O'~,'.~ ~ ~Ch~Ii~.at~C ~'2p~2SBI1=3TiGT ~;f a laser d2viGe,
c~.gu~e 6 shows a schematic .~epxesentatior. of a 'user de;Tice,
pir~~~e ? shows a sc'~~ez;,~.at;_c =epreseratatien ~f a laser de-ice
a~co~ding to ar: i1_.ustrat_ve errbodimer~t of I=.-re in~.,entior_.
I~: t_ a fi.~,ares, parts Nyic~ ara ~_ze sa:r~e cr havE t~~e sarr,e
e'fte~t are alT~aays give:, the carve refezences.
Iz~_ ~re arrargezren t of figure 1, a laser diode arra~l l, for
s ~itl~ '.rJi.
exarn ale & power ~ ; ~dl:c~~__ '_35er ~iicde arra_7, c~W~~G:-: ,~5
CA 02286774 1999-10-15
RCL 1'sY _. _ _. _ _ _ _ _ . _ _ _ _ . _ _ _ 1 ~o-_L 'w'i'g : 1 O : y;AM : __.
.. ._. . _ '1~~ Eo? 1 1.01- Sh1AR'r & , B t GGAR : # 6
r:rov~~'ed On ~n~.y cT:.e _resor_atC~x side with a resonator _nirrc~
-a~'el~, is arranged ir_ a: external optical reso.aatar. T~r~e
ex-e~nal opti~~a'- reson at..~.Y rc.ay be produced it free-radz,atior_
tec.h~aioav or in p~axar wavegua.de tech nology, and may
.~pti~r~aliy ce pr,~~.rided wi th a prAase plate for correcting the
x,ras~ fronts. '
In t~e arrazger::er_t of Fig-are 2, t:r~.e external op~ical rescz~zatar
is p~ovi3ed, for mote selectio.°i, with a m.~de diaphragm (for
ex~;,r" ~e a .sing' e-znccie fiber', which ~r.a~~ be proG'.~ced either in
t:~e peso: ator or in connection w,_th a resonator ~r,irrcr.
Acco~d,_ng .c :'figure 3, a sir_g1e-mace ~~aser dude array 1 is
ccup~ed -_n a pas,swve sirgie-mode ~t~a.veguide plate 2. the
sirg~e-uicde wwreguide plate :~.as a passive planar sit:gle-r.~ode
waz~e~uide branc'~ strucrure 6 in tre ~orm cf a binar~~ branch
Free ~of single-mode wavegW des ?, ;~hich, starting fron a
si nc a o-a~.yu'.: wat~eg~aide 4, spa its In ;'.he dire.~tir,z~ oz tte
-ase~ dlG~6' array 1 ir_to ,~ ~,~"~~e,r of single-mode wave guides 7
~~~~a.c~. correspomds to ~~_e _iurvber of indivi ".a'- laser diodes c.f
the ~aspr diode array 1. Here, the laser JJe~,Illu cf the
i.nai~~idual laser diodes, arranged = ext t~ owe a~xot~:er, of the
las~:~ diode array ~, are coherently ca'ap:~ed -oy means of a
pl-ar~'_i~.y of binary ~rancres 3 ~.nto a. single output watecuide
4. I
lr. F~gvare 4. a mvltin.ode laser diode array 1 is likewi se
cou~a~ed to a passi'.re single-mode w°°a~,regride prate 2 ~-
~aving a
z~as°~ve planar sir_gle-mode wa~reguide braucr~ structure 6 which,
_:~ p~inCiple, correspo:rds to that of Fi gura 3 . the sirxgle-~r.ode
I
,..~a~Je~'u.~_des each have, r_owever, at their ends faci:~g the laser
diced array ~a, a +~aper structure 5 wrio.h '~ransfers the ernitted
lase radiat:_on of tre respect'_ve-m°y associated individuaw
lace diode _:~tc the sz.rgle-mode waveguide % assi~~ried thereto.
-5-
CA 02286774 1999-10-15
RCV BY:, _ , _ __ _ __ __.__- lu-_15-9~) :1~):Oa3,W1 : 954:3.>5L101 % S~1ART
t~ >SIGG_AR:# 7
_ _. _ . _ _ _ __ . ._. ._ _. .__. .__. .... . . ._._ _
In ~ _e iwl'aStraCive errbod?merrt of F,~gt~xe 5r whic:r in principle
c~az;~ spond.s to the ~ili:.5r=ative em~cdin'.en. o~ Figure y a 7FB
Brat ~ng ,tructwre v_s add--tiox:ally arra~gec or: the outp~:r
ware ui,de 4, b~ rucaris o' wrt-~~~h single-mode c,perafi_ior~ :~s
a~i~.i~v ed .
Tr_. ~~G~lre H, the wa~~egui~.e5 additionally have phase sk'~Afters
~~ 0 a d the resora tox fur thermore coatair s at J, ease C~ne
i
abso~b ing medwam ~ 1 zcr !.ode sel?ctJ.._~.r_. These tw~:, CCmpon2zas,
p~zas I a~aifter '_~ and abscrbi:~r~ medi~~,r~ :~~~., may be used entirely
indeer_denT~~y cf cne another, so that it is seJ_e~~tivei
Y
p5ss~~n~.e t~ pr~dUCe onl ~Yr ~-
y .e o= bcth of _hese C-a~r>por_ents .
the ~J_J_ustrative em~~,:vdixne~~Y acccrdr_=g to the ir:~tention cf
Fig~;~e - .'ms, for mode sele~::tion, c~~v°ved sir_g-~e-mode
gave aides , which com.i~ine the laser ra,diatior: to a piura~ ,.tx°
cf o , as shYw;~ izz t:_a_ figure, to a s'iryie outp~it wa=aPgGi de 4.
i
I
ir: C~der tc reduce C.ovp_v_ng ;.osses an~:~ ba:: k-~_ef;i_eo-tians
~>etw~ar_ the lineaw away _~f iassr diodes 1 and the nassiae
-
plan~.r w~aveg'aide strv:.ctvre 5, Y~.e wa~ve.gui des 7 andi ur the
lase~ dioc.es r.'.ay be widened ~~y adia'~at,_ cc. ;-a:::ers and/or the
wide.~ec: :.cupling ~aoCation is arranged ooiiquely with ~_espec=
~O t~'~.° Cpt~C~l 3X_v 4 f ~~".~ l~Ser ,~~~,'1G~: eS .
it1 ~ ~~l:Wtiler re ~ " S r t. , C ~Oi'ldtG_ '.1_..
p ter_ed '.~a a deL°i, w tile pt,-;~a'~ re
I
a p~~.~sa riate or indis~idualiy aajustable planar-optica~~. phase
i
s_~y~' era Gn Che Single-:node wave~.~uiaes or the user diode.a fcx
ccrr~cti.rlg phase frC:-,ts.
CA 02286774 1999-10-15
