Note : Les descriptions sont présentées dans la langue officielle dans laquelle elles ont été soumises.
-- 1 --
PERPENDICULAR MAGNETIC RECORDING MEDIUM,
METHOD FOR PRODUCING THE SAME,
AND SPUTTERING DEVICE
This a~plication is a divisional of co-pending Canadian
Application Serial No. 391,981, filed December 10, 1981~
The present invention relates to a perpen~icular magnetic
recording medium of a cobalt alloy which comprises mainly
cobalt and additionally chromium and a method for producing
the same. ~ore particularly, the present invention relates
to a perpendicular magnetic recording medium having a novel
pattern as seen through an electron microscope and to a
method for producing the same. In addition, the present
invention also relates to an improved sputtering device.
The present magnetic recording system fundamentally
uses the longitudinal ¦in-plane) magnetization mode, that
; is, a magnetization being parallel to the base, to which the
cobalt alloy layer is applied.
Iwasaki has proposed in IEEE Transactions on Magnetics,
Vol. MAG-16, ~o. 1, January 1980, pp71-76 a perpendicular
magnetic recording system which theoretically makes it
possible to produce a higher density recording than in the
case of the longitudinal magnetization mode~ In the per-
pendicular magnetic recording system, the magnetization
p~rpendicular to the surface o~ the magnetic recording layer
is used for the recording. Research, for example as shown
in Japanese Laid Open Patent Application No. 52-134706 and
Technical Reports MR80-43 and MR81-5 of the Institute of
Electronics and Communication Engineers of Japan, has been
energetically carried out in an attempt to commercially
apply the perpendicular magnetic recording system and to
elucidate the properties of a magnetic medium r~quired for
the magnetic recording devices.
The results elucidated by previous research regarding
the propertiæs of a magnetic layer necessary for perpendicular
magnetic recording are now explained. The magnetic layer
adapted to the perpendicular magnetization system should be
an alloy layer mainly consisting o~ cobalt and additionally
'~
a ~
chromium and should have a magnetic anisotropy perpendicular
to the layer surface. This magnetic anisotropy, i.e. per-
pendicular magnetic anisotropy, should usually have a
relationship of Hk > 4 Ms, wherein Hk and 4~Ms are the
anisotropy field and the maximu~ demagnetizing field of a
magnetic layer, respectively. This relationship designates
that the magnetic layer possesses a satisfactorily high
perpendicular anisotropy.
The perpendicular anisotropy may not have a relation-
ship of Hk > 4~Ms at any point on the magnetic layer if a
particularly high density magnetic recording is to be
achieved. Instead, a high saturation magnetization (Ms~ is
desired and, therefore, chromium is incorporated into
cobalt in such an amount that a saturation magnetization
(Ms) ranging from 200 to 800 emu/cc is ensured. The cobalt,
which is the major component of the magnetic film, has an
hcp (hexagonal closed packing) structure and a uniaxial
magnetic anisotropy which makes possible a high anisotropy
field. Such an anisotropy field is one of the properties
necessary for perpendicular magnetic recording. A cobalt
alloy layer, whlch has an hcp structure and a high perpen-
dicular orientation to the layer surface (C-axis of the alloy
is perpendicular to the layçr surface), exhibits a satis-
factorily high anisotropy field Hk. The perpendicular
orlentation mentioned above is evaluated by subjecting a
magnetic film to X ray diffraction, obtaining the rocking
curve of the diffraction peak from the (002) plane of the
hcp structure, and measuring the half value width or
dispersion angle ~50 of the rocking curve. A half value
width ~50 of 15 or ~ess is alleged to be sufficient for
excellent perpendicular anisotropy. The coercive force H v
in the perpendicular direction, which is more than 100 Oe
(Oersted), is allegedly sufficient for an excellent per-
pendicular orientation.
It is reported in the Japanese Journal of Applied
Physics Vol. 20, No 7 and in the Technical Repor-t of the
Institute of Electronics and Communication Engineers of
f~
~ 3 --
Japan ~IR81-S that the above properties necessary for the
perpendicular magnetic recording mode can be produced by a
cobalt alloy layer in which from 15 to 25 atomic % of
chromium is incorporated and that columnar stripe patterns,
which can be detected at the fracture or cross section of
the cobalt alloy layer and which elongate perpendicularly to
the film surface, favourably exert an influence on shape
anisotropy and play an important role in the perpendicular
anisotropy of the cobalt alloy layer. According to the
results of research carried out by the present inventors,
however~ the columnar stripe patterns are disadvantageous in
the light of high internal stress and strain of the cobalt
alloy layer. A disadvantageously large curl of the con-
ventional perpendicular magnetic recording mediums could be
attributed to the columnar stripe patterns, thus resulting
in high internal stress and strain of such layersO
Conventional perpendicular magnetic recording mediums
have been produced by an RF sputtering method (USP
No. 4,210,346). Mamely, cobalt alloy layer containing from
5 to 25 weight ~ of chromium is deposited on the base to a
thickness of 1 micron by means of the RF sputtering method.
~owever, the RF sputtering method, in which the target
electrode and the base are disposed opposite to one another,
cannot be applied in the case of large-scale production of
or high-speed growth of perpendlcular magnetic recording
layers. The highest growth rate of cobalt alloy layer
achieved at present by means of the RF sputte.ring method is
about 500 A per minute (The fourth meeting o~ the Japan
Society for Applied Magnetism 1980, 60A 4). It is therefore
desired that the growth rate be enhanced to such a degree as
to make possible commercial production of perpendicular
magnetic recording mediums. Furthermore, in the conventional
method, the base is heated to provide the cobalt alloy
layer, which grows on the base, with the columnar stripe
patterns mentioned above. ~hen the film is used as a base
for a magnetic recording medium, such as .in the. case of a
magnetic tape or a floppy disc, the mate.rial of which the
disc is made is re.stricted to a heat-resistant macromolecular
material. Such restriction hinders commercial application
of the pe.rpe.ndicular magnetic recording medium.
It is an object of the pxesent invention to provide a
perpendicular magnetic re.cording medium which does not have
the columnar stripe pattern but has a novel pattern and a
homogenity drastically reducing the curl of a perpendicular
magnetic recording medium and enhancing the flexibility o
such medium.
It is another object of the present invention to provide
a method for producing a perpendicular magnetic recording
medium at such an enhanced rate of production as to make
this method commercially applicable. The method provided
should make it possible to use less expensive and a lower
heat-resistant film, such as a polyethylene terephtalate
film and a polyethylene-2.6 naphtalate film, as the base for
the perpendicular magnetic recording medium.
It is yet another object of the present invention to
provide a sputterning device which allows uniform and high-
-speed formation of a magnetic layer, particularly a
perpendicular magnetic recording layer.
; In accordance with the objects of the present inven-
: tion, there is provided a perpendicular magnetic recording
medium formed on a base and comprising an hcp cobalt alloy
layer which comprises mainly cobalt and additionally chromium
and which has a direction of easy magnetization in a direction
normal to the base, characterize.d in that the cobalt alloy
layer has particle pattern, as. seen in a cross section of
the. layer observed with an electronmicroscope.
In accordance with the objects of the present invention
there is also provided a method for producing a perper.dicular
magnetic recording medium, wherein an hcp cobalt alloy layer
which consists mainly of cobalt and additionally chromium
and which has a direction of easy magnetization in a direction
normal to the base is deposited on the base by means of a
sputtering method, characterized in that a ~agnetic field is
generated in a direction perpendicular to the sur~aces of a
- s -
pair of cathode targets arranged opposite to one another
within a sputtering device, and the cobalt alloy is deposite.d
on the base which is located beside a space betwe,en said
pair of cathode targets and which faces said space,.
In accordance with the objects of the invention, there
is also provided a sputtering device, comprising:
a vacuum vesse.l;
a pair of oppositely arranged cathode targets in
the vacuum vessel;
a holder for a base, on which a film lS diposited
by the sputtering, said holder being located beside a space
between the pair of the cathode targets and facing said
space;
a means for generating a magnetic field perpen-
dicularly to the cathode targets; and,
a power source for applying a ne.gative bias voltage
to the holder.
The embodiments of the present invention are hereinafter
explained with reference to the drawings, wherein:
F:ig. 1 is a partial cross-sectional view of a
sputtering device used to implement the method of the present
invention;
Fig. 2 is a drawing illustrating the curl of the
perpendicular magnetic xecording medium;
Fig. 3 is a drawing similar to Fig: 1 and sche-
matically illustrates a sputtering device with magnets
mounted behind the cathode targets;
Fig. 4 is a cross-sectional view of the, cathode
targets;
Fig. 5 is a cross-sectional view along line V-V'
of Fig. 4;
Fig. 6 is a drawing similar to Fig. 3;
Figs. 7 and 8 are electronmicroscopic photograph
of the surface and cross section of the perpendicular mag-
netic recording film which does not have the pattern of the
present invention;
Figs. 9 and 10 are photographs similar to Figs. 7
-- 6 --
and 8, respectively, but illustrate the film of the present
invention;
Fig. 11 shows an example of the columnar pattern;
Figs. 12 and 13 show examples of the particle
pattern of the present invention;
Fig. 14 is a graph indicating the relationship
between saturation magnetization and alloying contents;
Fig. 15 shows two hysteresis curves of the per-
pendicular magnetic recording medium; and,
Figs. 16 and 17 are graphs illustrating the rela-
tionship between the magnetic properties and the growth
rate.
Referxing to Fig 1, a sputtering device with a pair of
opposing cathode targets is illustrated. As described
hereinabove, the conventional perpendicular magnetic recording
mediums were produced by means of RF sputtering. The sput-
tering device with a pair of opposing cathode targets, used
to prepare films made of ferromagnetic non-perpendicular-
-oriented materials such as iron and nickel, was recently
reported by Naoe et al in the Journal of Crystal Growth,
Vol~ 45, pp361-36~, 1978.
The sputtering device with a pair of opposing targets,
hereinafter simply referred to as the opposing target sput-
tering device, comprises a vacuum vessel 10 and a pair of
cathode target5 Tl , T2 which are closely attached or secured
to the target holders 11, 12. The cathode targets Tl , T2 '
hereinafter referred to as the targets Tl , T2 ~ are arranged
opposlte to one another so that their surfaces, which are
subjected to sputtering, i.e. the sputtering surfaces TlS ,
T2S , face one another via the space between the targets Tl
and T2 and are parallel to one another. Th~ distance between
the targets Tl and T2 is preferably from 50 to 400 mm. The
targets Tl , T2 ~ which are subjected to sputtering, are
cooled by water, symbolized by the arrows A and B, which is
admitted into the target holders 11, 1~. The target holders
11 12 are secured to the side plates 15, 16 of the vacuum
vessel via the insulating members 13, 14. The target
g'~
holders 11, 12 and the insulating members 13, 14 are protected
by shields 17, 18 from plasma particles formed during
sputterlng so that abnormal electric discharge does not
occur at the target holders and the insulating me~bers.
The base 20, on which the perpendicular magnetic re-
cording layer is to be formed by means of the sputtering
method~ is located on the base holder 21 disposed beside the
targets Tl , T2 50 that the base 20 is located beside the
space between the targets Tl , T2 and faces this space. The
distance between the base holder 21 and the end~ of the
targets Tl , T~ is preferably 100 mm or less. The base 20
is usually positioned vertically.
The field coil 31 is a means for generat~ng the mag-
netic field perpendicular to the sputtering surfaces TlS ,
T2S and surrounds the outer periphery of the vacuum vessel
10. A direct current from a power source (not shown) is
applied to the field coil 31. A sputtering power source is
denoted by 40 and is a direct current source to which the
targets Tl , T2 and the shields 17, 18 are connected as a
cathode and an anode, respectively. The vacuum vessel 10 is
provided with gas exhausting port 51 which communicates with
a gas exhausting system (not shown) and a gas introducing
port 61 which communicates with a gas source ~not shown) and
its associated gas-introduction devices. The arrows C and D
symbolize the flowing direction of the gas. ~
When operating the opposing target sputtering device
described above, the gas exhausting device is preliminarily
operated so as to satisfactorily withdraw the gas in the
vacuum vessel 10 ~hrough the gas exhausting port 51 and,
subsequently, a sputtering gas, such as an argon gas, is
admitted into the vacuum vessel 10 so that the pressure in
the vacuum vessel 10 is increased to a predetermined level,
for example from 10 1 to 10 4 Torr. Then the field coil 31
is energized to generate the predetermined magnetic field ~,
and the sputtering power source 40 is energized to apply a
predetermined power between the cathode and anode.
In the opposing target sputtering device shown in
Fig. 1, the electric field and the magnetic field H are
perpendicular to the sputtering surfaces TlS , T2S. Due
to the layout and configuration of the targets Tl ~ ~2
the electrons can be confined in the space between the
targets Tl , T2 while the metals sputtered from ei-ther of
the targets Tl , T2 repeatedly collide with the opposite
target and the energy of the metals is reduced during the
repeated collisions. The metals, whose energy is reduced as
just stated, do not seem to deposit on the base 20 solely
due to the energy thereof; rather, the formation of per-
pendicular magnetic recording layer seems to result mainly
due to diffusion of the metals from the space between the `
targets Tl , T2 toward the base 20. In other words, a high
density plasma is formed in the space between the targets
Tl , T2 so that diffusion of the metals, which metals are
possibly metal ions, can be realized. It is believed that
high-speed growth OL the perpendicular magnetic recording
layer can be achieved by confinement of the electrons or the
high density plasma. Since the base 20 is offset from the
targets Tl , T2 ~ heat generation due to the impinging
effects of the electrons on the base 20 is not appreciable
and therefore perpendicular magnetic recording film can be
formed at a low temperature.
~eferring to Fig. 2, the method for determining the
curl of the perpendicular magnetic recording medium is
schematically illustrated. The degree of curl (Kp) is
expressed by:
hl ~ h2
Kp- ____ x 100(~),
2Qo
wherein the symbol Ro indicates the length of a specimen
without ~url and the symbols hl , h2 indicate the deviation
of a specimen with curl from both ends of the specimen
without curl. According to their definition in this specifi-
cation, the positive polarity of curl is a curl in which the
perpendicular magnetic recording layer (F) and the base are
bent outwardly and inwardly, respectively, while the negative
polarity of a curl is a curl in which the perpendicular
magnetic recording layer and the ~ase are bent inwardly and
outward, respectively. According to the present invention,
the absolute degree of curl (Kp) can be not more than 15~,
preferably not more than 10~.
The length of specimen is approximately 10 mm, and the
thickness of base 20 is usual value for magnetic recording,
i.e. 100 microns or less.
The opposing target sputtering device shown in Figs. 3
is more advantageous than the device shown in Fig. 1 in
regard to the fact that the magnetic field H is not formed
entirely within the vacuum vessel 10, as it is in the device
shown in Fig. 1, but is locally formed. In other words, in
the device shown in Fig. 1, the electron density is locally
high around the central axis across the targets Tl , T2~
Contrary to this, the electron densi-ty is uniform in the
space between the targets Tl , T2 in the device shown in
Fig. 3. In Fig. 3, the same reference numerals as in Fig. 1
denote the same members. Reference 22 denotes an insulating
member which electrically insulates the base 20 from the
vacuum vessel 10, and the base a bias power source 41
(Fig. 4). A shutter (not shown) disposed within the vacuum
vessel 10 advances in~o the gap between the base 20 and the
targets Tl , T2 and protects the base 20 from the pre-
-sputtering gases. The shutter retracts from the gap upon
completion of pre-sputtering.
In the opposing target sputtering device shown in
Fig. 3 the perpendicular magnetic field is generated only
between the targets Tl , T2. The generation of such per-
pendicular magnetic field is made possible by locating
permanent magnets 32, 33 behind the targets Tl , T2. The
permanent magnets 32, 33 (Figs. 4 and 5) are located in such
a manner that the N pole of the permanent magnet 32 situated
behind the target Tl is opposite to the S pole of the perma-
nent magnet 33 situated behind the target T2. The magnetic
field between the N and S poles mentioned above is, therefore,
-- 10 --
perpendicular to the targ~ts Tl , T2 and is also confined
between the targets Tl , T2. The targets Tl , T2 and the
permanent magnets 32, 33 are cooled by a cooling me.dium,
such as water, admitted into the inn~,r space of the, target
holders 11, 12 via the cooling medium conduits 151, 152.
The magnetic field formed solely between the targets Tl , T2
results in the uniform distribution of electrons in the space
between the targets Tl , T2. Since the density of plasma
particles in such space is uniformly high, sputtering of the
targets Tl , T2 is accelerated and the, diffusion of metals
from such space is enhanced, with the result that the depo
sition rate of the metals on the base 20 is further increased
as compared with the opposing target sputtering de.vice shown
in Fig. 1. The arrangement of the permanent magnets 32, 33
behind the targets Tl , T2 is advantageous from an industrial
point of view because the structure of the opposing target
sputtering device is very simplified. In addition, the
arrangement of the permanent magnets 32, 33 solely along the
periphery of the targets Tl , T~ results in a local dis-
tribution of the. magnetic field along such periphery. Theresults of the experiments of the present inventors revealed
that the entire surface of the targets Tl , T2 can be
virtually uniformly sub~ected to sputtering due to this
local distribution of the magnetic field. This is very
advantageous because sputtering efficiency can be enhanced
or high-speed sputtering can be achieved without causing a
local elevation of temperature in the targets Tl , T2.
Furthermore, the permanent magnets can be located entirely
behind the targets Tl , T2.
As can be understood from the permanent magnets 32, 33
shown in Figs. 4 and 5, said magnets are hollow and have a
rectangular cross sectionO It can be understood from Figs. 4
and 5 that the magnetic field between the targets Tl , T2
completely surrounds the outer periphery of the space between
the targets Tl , T2.
In the opposing target sputtering de.vices shown in
Figs. 3 and 4, a bias potential is applied to the base 20
from the bias power source 41, which is an alternating
current source in Fig. 4 but may be a direct current source.
The bias potentlal of the base 20, which is lower than the
ground potential, generates an electric field which is
virtually perpendicular to the base 20. The fre~uency of
alternating current should be RF frequency. It is supposed
that the rate of deposition of metals on the base 20 and the
crystallographic properties of the cobalt alloy can be
improved by the bias potential.
In the opposing target sputtering device shown in
Fig. 6, the base 20 is in the form of a film and the base
holders 21 are in the form of a roll. In Fig. 6, the same
reference numerals as in Fig. 1 denote the same mem~ers.
The reference numerals 44 and 45 denote an evacuating system
and a gas-introducing system, respectively. The unwiding
roll 21a, the supporting roll 21b and the winding roll 21c
are rotatably mounted on each bracket (not shown) and are
aligned so that their axes are parallel to each other~ The
surface of the base 20 to be subjected to the deposition of
metals thereon is successively conveyed to face the space
between the targets Tl , T2 by the unwinding and winding
rolls 21a and 21c, respectively, while the supporting roll
21b supports said surface virtually perpendicularly to the
surface of the targets Tl , T2.
When using opposing target sputtering devices such as
those shown in Figs. 1, 3, and 6, a less expensive and lower
heat-resistant macromolecular material than that used in the
conventional method can be used for the base 20. Such
macromolecular material includes polyester, such as poly-
ethylene terephthalate and polyethylene-2,6 naphthalate, and
other organic macromolecular materials having heat resistance
at approximately 100C at the hiyhest. These materials are
usually used as a flexible base in the film form. The
polyethylene terephthalate and polyethylene-2,6 naphthalate
mentioned above include not only homopolymers but also
copolymers, in which 85% or more of the repeating units are
polyethylene terephthalate or polyethylene naphthala-te.
- 12 -
The theory of forming the perpendicular magnetic
recording medium by means of the opposing target sputtering
device (Figs. l, 3, and 6) is no~ explained although the
scope of the present invention is not limited to such
theory.
The sputtering gas, usually argon gas ionized as Ar
ions, which is accelerated due to the cathode drop in front
of the targets Tl , T2 ~ impinges the sputtering surfaces
TlS , T2S , with the result that gamma electrons are expelled
from the sputtering surfaces TlS , T2s. The magnetic field
is generated between the targets Tl , T2 perpendicular to
the sputtering surfaces TlS , T2S , and the electric field
at the cathode drop space in front of the targets is directed
parallel to the magnetic field. The direction of the electric
field is the same as and opposite to the magnetic field.
The gamma electrons expelled from either of the targets Tl ,
T2 are moved toward the opposite target while the gamma
electrons are confined in the space between the targets Tl ,
T2. The gamma electrons are then reflected from the opposi~e
target while simultaneously being confined in said space.
During the reciprocal movement of the gamma electrons, the
gamma electrons collide with the neutral gases so that thesa
gases are ionized and electrons are simultaneously expelled
from the gases. The so-ionized gases promote the emission
of gamma electrons from the targe.ts Tl , T2 and, in turn,
ionization and electron formation occur. A high density
plasma is, therefore, formed in the space between the
targets Tl , T~ , resulting in an increase in sputtering of
the cobalt alloy material from the targets Tl , T2 and an
increase in the deposition rate. As is described in refer-
ence to the illustration of Fig. 1, the opposing target
sputtering device has been used to form ferromagnetic
material films for magnetic heads. However, these films do
not have perpendicular anisotropy. The present inventors
discovered ~hat a perpendicular magnetic medium can be
produced by means of opposing target sputtering de.vices.
And the production rate is conslderably higher than that by
- 13 -
means of conventional sputtering devices. The fact that the
magnetic layer has perpendicular anisotropy appears to be
due to the confinement of the gamma electrons and the position
of the base, that is, the base is positioned next to the
space between the targets Tl , T2 where the influence of the
argon ions, the gamma electrons and the secondary electrons
is not very appreciable. In other words~ the base 20 is not
exposed to the plasma gas between the targe~s Tl , T2
~owever, the metals of the cobalt alloy, which are sputterd
from the targets Tl , T2 can be deposited on the base 20 at
a high rate. This appears to be realized by the fact that
sputtering is promoted as stated above. The diffusion of
metals from the space between the targets Tl , T2 toward the
base 20 takes place, and the metals are cooled during dif-
lS fusion so that the metal particles formed during the coolingprocess are very liable to form an hcp structure and a
homogeneous layer on the base 20. Since ~he kinetic energy
of the diffused metals is considerably less than that of the
metals directly after sputtering, the kinetic energy of
metals deposited on the base is very low, which seems to
result in perpendicular anisotropy and low degree of curl
~Kp)o
In the method of the present invention, the base is
advantageously subjected to bombardment in a glow discharge
before sputtering.
In the opposing target sputtering device shown in
Fig. l, an electromagnetic force (f) is generated between
the magnetic field (H) and the current ~i) which is generated
by motion of the secondary electrons, gamma electrons, argon
ions and the ionized metal particles. The electromagnetic
foxce (f) is expressed by:
f ~i
The argon ions are subjected to the electromagnetic force
(f~ when they diffuse from the space between the targets
Tl , T2 toward the base 20. However, the electromagnetic
force (f) is decreased as the argon ions are diffused. The
direction of the electromagnetic force (f) is determined by
3 ~
- 14 -
Fleming's left hand rule, and it is inclined relative to the
surface of the base 20. The argon ions therefore impinge on
the base ~0 frcm the inclined direction, which seems to be
undesirable for the uniform formation of perpendicular
magnetic recording layer. Contrary to this, in the opposing
target sputtering devices shown in Figs. 3 and 4 and provided
with a bias power source 41, the bias potential is applied to
the base 20 and its surface is kept electrically neutral
during the sputtering so that the ionized metal particles can
impinge on the base 20 in a direction which is virtually
perpendicular to the base 20. The impinging kinetic energy
is proportional to the bias potential, which generates the
electrlc field pe.rpendicular to the base 20. Perpendicular
impinging o~ the ionized metal particles under an appropriate
kinetic eIIergy~ especially at the beginning of sputtering,
is advantageous for perpendicular anisotropy of cobalt alloy
and also for a small degree of curl. Such kinetic energy
can be ensured by a bias potential of from to -100 V.
The prese.nt inventors also studied the pattern of
perpendicular magnetic layers and its influence upon the
properties of the layers, particularly the curl and flexi-
bility of magnetic re.cording mediums.
The pattern of magnetic recording layers was investi-
gated by means of a diffraction electronmicroscope produced
by Japan Electron Co., Ltd (JSM-35C type). The crystal-
lographic structure of the magnetic recording mediums was
identified by means of a scaling X-ray diffractometer
produced by Rigakudenki Co., Ltd. The degree of perpen-
dicular orientation of the magnetic layers was determined by
subjecting these, layers to X-ray diffraction, obtaining the
rocking curve of the (0023 planes of the hcp structure, and
measuring the half value width ~50. The perpendicular
coercive force Hcv and anisotropy field Hk of the perpen-
dicular magnetic layers were measured by means of a vibration
sample magnetometer ~VSM~ produced by Toeikogyo K.R. The
method of measuring the anisotropy field Hk was based on the
method reported in IEE~ TRANSACTIONS ON MAGNETICS, VOL.
- 15 -
MAG-16, No. 5, SEPT. 1980, page 1,113. ~igure 15 shows the
method of illustrating the anisotropy field Hk. The solid
lines and the broken lines indicate the perpendicular
hysteresis and the in-plane hysteresis, respectively. An
effective anisotorpy field Hkeff is obtained by drawing the
maximum permeability line of the in-plane hysteresis and
then determining the intersecting line of the maximum
permeability line with the perpendicular hysteresis curve.
Referring to Figs. 7 and 8, the pattern of a perpen-
dicular magnetic recording layer produced by a conventional
sputtering device is shown. This layer was produced under
the following conditions:
A. The Sputtering Device
A DC magnetron sputtering device was equipped
with a base holder and target arranged oppositely to one
another in the vacuum vessel. A bias potential of -100V was
applied to the base holder.
B. Base:
A 75-micron thick polyimide film.
C. Thickness of the Magnetic Film:
0.8 micron
Referring to Figs. 9 and 10, which are electron micro-
scopic photographs similar to Figs. 7 and 8, respectively,
an example of the pattern of a perpendicular magnetic
recording layer according to the present invention is shownO
This layer was produced under the following conditions:
A. The Opposing Target Sputtering Device (Fig. 3)
(1) Material of the Targets Tl , T2:
cobalt alloy containing 17~ by
weight 518.5 atomic %) of chromium
~2) Distance Between the Targets Tl , T2:
100 mm
(3) Magnetic Field in the Neighborhood
of the Targets Tl , T2:
150 ~ 300 gauss
(4) Dimension of the Targets Tl , T2:
150 mm x 100 mm x 5 mm (-thickness)
- 16 -
(5) Distance of the Base 20 from the End of
~he Targets Tl , T2:
35 mm
B. Base
. a 75-micron thick polyimide film
C. ~hickness of the Magnetic Layer:
1.3 micxons
The perpendicular magnetic recording layer was produced
by the following procedure.
lOThe base 20 was first fixed on the base holder 21 and
then the gas in the vacuum vessel was evacuated until an
ultimate degree of vacuum of l x lO 6 Torr or less could be
achieved. Subsequently, the argon gas was admitted into the
vacuum vessel lO until the pressure was increased to 4 mm
Torr. After pre-sputtering amounting to 3 to 5 minutes, the
shutter (not shown in Fig. 3) was retracte.d and the formation
- of a perpendicular maynetic recording layer on the base was
initiated.
Several properties of the magnetic mediums so produced
are given in Table l.
Table l
. .~
Cryst~s Degree Magnetic Prc~erties
Samples S ~ cture a8 ( ) of Cbrl Hcv(Ce) ~( ~ ~ o~V''~
Inventionhcp (002) 3.0 + 3 930 5.4 550
(Figs. 7tive E~le hCp (002) 5 6 ~17 llO0 5.4 565
.~
- 17 -
The magnetic properties of both samples very well
satisfy the requirements for the magnetic properties in the
perpendicular magnetic recording layer mentioned hereinabove
in the description of the background of the invention.
~owever, the degree of curl ~Kp) of the present invention is
+3%, a very small degree, while the degree of curl (Xp) of
the comparative example is ~17~, a very large degree. If
the magnetic medium of the comparative example is commercially
applied, the spaclng loss between the magnetic head and the
magnetic medium is so large that the electromagnetic con-
version characteristic is disadvantageously decreased.
The deposition rate of cobalt alloy in the method of
the invention using the opposing target sputtering device
was 0.10 micron (lOOOA) per minute, while the deposition
rate in the comparative example using the conventional
sputtering device was 0~02 micron (200 A) per minute. When
the method of the present invention is compared with the
method of the comparative example, it can be concluded ~hat
the deposition rate of the present invention is five times
as high as that of the comparative example and achieves a
degree of curl (Kp) superior to and magnetic properties
equivalent to those of the comparative example.
When Figs. 7 and 8 of the comparative example and Figs.
9 and lO of the present invention are compared, the following
conclusion can be obtained.
The crystals of both samples are hcp and the half value
widths (~a50) of both samples are not largely different frcm
one another. In addition, the surface pattern of both
samples shown in Figs. 7 and 8 shows fine particles which
aggregate next to each other forming grain boundaries. The
surface pattern of the perpendicular magnetic recording
layer according to the present invention is not different
from that of the comparative example. The diameter of the
fine particles shown in Fig. 9 is almost uniform and is
approximately 500A on the average. Contrary to the simi-
larity between the surface patterns, of the present invnetion
and the comparative example the cross section pattern shown
`àL~ L
~ 18 -
in Fig. lO (the presen~ invention) is completely different
from that shown in Fig. 9 (the comparative example).
In Fig. 8, the stripe patterns are elongated longi-
tudinally and perpendicularly to the layer surface, and the
border hetween neighbourlng longitudinal patterns is similar
to a crack. In ~ig. lO, the longitudinal elongated patterns
cannot be detected; instead, the cross section is composed
of particles, each particle having a similar dimension in
any direction. These particles have an irregular shape, e.g.
polygonal, ellipsoidal and the like, but definitely
do not have a columnar shape~ The dimension of all of the
particles is not constant throughout the cross section; it
tends to be larger in the neighborhood of the layer sur~ace
than in the neighborhood of the base. The dimension of the
particles in terms of a circumscribed circle of the particles
is approximately 2000A at the maximum. Particles with such a
dimension are present near the layer surface. Also, judging
from the comparison of the pattern shown in Fig. lO with the
columnar pattern previously reported in several technical
reports and papers, the pattern shown in Fig. lO is distinctly
different from the columnar pattern.
It has been previously believed in the art of perpen-
dicular magnetic recording mediums that perpendicular
anisotropy is mainly attributable to a columnar pattern.
Surprisingly, however, perpendicular magnetic recording
film, which does not have a columnar pattern but a particle
pattern, possesses magnetic properties equivalent to those
of conventional perpendicular magnetic recording layers
having a columnar pattern and even posseses a degree Ot curl
which is less than that of conven~ional layers. These
merits seem to be possible for the following reasons.
Non-columnar particles also have àn axis of easy magneti-
zation ~the C axis of hcp cobalt) normal to the layer
surface, and the internal stress or strain induced during
their deposition is extremely reduced in comparison with the
internal stress or strain induced during the deposition of
cobaltalloy having a columnar structure. In the non-columnar
-- 19 --
pattern discovered by the present inventors, it should not
be construed that colummnar crystals cannot be formed at
all. Rather, it is reasonable to construe that the boundary
layer of columnar crystals is too thin to be detected by an
5 electronmicroscope. Since the boundary layers, which resemble
cracks, in the conventional perpendicular magnetic layers
cannot be detected in the layers of the present invention,
one can conclude that the cobalt alloy crystals are very
homogeneous in the present invention. Furthermore, since
the information to be written in the perpendicular magnetic
layer can be recorded in the cobalt alloy crystal grains but
cannot be recorded in the boundary layers, a hiyh recording
density could be achieved in the perpendicular recording
mediums of the present invention. Also, the low flexibility
of the conventional perpendicular magnetic recording mediums
may be ascribed to the boundaries, which, however, cannot
be detected in such mediums of the present invention.
The non-columnar pattern is hereinafter referred to as
particle pattern, in which the particles exhibit similar or
20 not greatly different dimensions in all directions. However,
it is to ~e noted that "particle pattern" indicates a
similarity of dimensions as seen solely in the cross
section of a layer. Such pattern is similar to the pattern
of equiaxed particles.
Other examples of columnar pattern and particle pattern
are further explained. Referring to Fig. 11, an example of
a columnar pattern is shown. In this pattern, the degree of
curl is inferior to that of the particle pattern. The
particle pattern shown in Figs. 12 and 13 exhibits an ex-
30 ceIlent anti-curling tendency. In particle pattern, the
partlcle size is not uniform throughout the cross section of
the perpendicular magnetic recording layer, but the particles
exhibit similar dimensions in all directions as seen in the
cross section.
The specimens for observing the surface structure
~Figs. 8 and 10) were prepared by depositing an Au-Pb layer
on the perpendicular magnetic recording layers to a thickness
- 20 --
of approximately 200A. Electronmicroscopic photographs were
taken at a magnification of 40,000 and under an acceleration
voltage of 25 kV. The specimens for observing the cross
sectional pattern (Figs. 8 and 10~ were prepared by putting
the magnetic recording mediums into a gelation capsule
together with ethyl alcohl, cooling the capsule with liquid
nitrogen for two hours, and then cleaving the capsule with a
cleaving ~nife. The device used for the freeze-cleaviny
method was a TF-l type device produced by Eiko Engineering
Co. Ltd.
The cobalt alloy used in the present invention as the
material for a perpendicular magnetic recording layer is
mainly composed of cobalt and additionally chromium. Another
additional element or elements, which do not alter the hcp
structure, may be incorporated into the cobalt alloy. The
present inventors discovered that rhenium, tungsten and
molybdenum which can be incorporated into the cobalt alloy
in addition to chromium in amounts of from 2 to lO atomic ~,
cannot alter the hcp structure of cobalt; rather, these
elements advantageously decrease the half value width (~50)
and increase the deposition rate of cobalt alloy. The
atomic percentage of chromium(x) and the atomic percentage
of rhenium, tungsten and molybdenum(y) should have the
following values:
8(~) c x
2~%~ < y < lO(~) and
~ ) < x + y < 27(~)
Although three alloying e.lements are. described, other
elements which do not alter the hcp structure by forming a
second phase might be contained in the cobalt alloy.
Referring to Fig. 14, the solid line indicates the
saturation magnetization of Co-Cr alloys and the spots of
symbols "O" indicate the saturation magnetization of Co-Cr-
-Re alloys with the total contents of chromium and rhemium
3s given in the drawing. When perpendicular magnetic layer of
these alloys is formed by the DC magne-tron sputtering, the
degree of curl is large, while the degree of curl can be
- 2~ -
d~creased by the present invention.
The perpendicular magnetic recording medium according
to the present invention may comprise, in addition to the
base and the perpendicular magnetic recording layer (cobalt
alloy film), a layer of soft magnetic metal. The layer of
soft magnetic metal may be formed on the surface of the base
opposite to the surface where the perpendicular magnetic
recording film is formed. Alternatively, the layer of solt
magnetic metal may be formed beneath the perpendicular
magnetic recording film. The soft magnetic metal herein
indicates crystalline ferromagnetic metal having a coercive
force of 50 Oe or less or, preferably, 10 Oe or less and
high permeability, such as be Permalloy, Alperm and Sendust.
The thickness of soft magnetic metal layer should be from
0.10 to 1 micron. A layer of soft magnetic metal can
furthermore decrease the degree of curl (Kp).
The base of the perpendicular magnetic recording medium
may be made of metal, glass, plastics or other materials
having a heat resistance sufficient for withstanding the
sputtering. Particularly, organic macromolecular film, such
as polyester film, having a lower heat resistance than that
of polyimide or polyamide film can be used in the present
invention The organic macromolecular film may contain an
inactive inorganic compound, such as MgO, ZnO, MgCO3 ,
CaCO3 , CaSO4 , BaSO4 , A12O3 , SiO2 , or TiO2 , for the
purpose of adjusting the surface roughness of the film.
In addition a lubricant may be applied to the surface
of the base opposite to the surface where the perpendicular
magnetic recording film is formed. The lubricant may be an
organic lubricant, e~g. sorbitan, an organic macromolecular
lubricant, e.g. polytetrafluoroethylene or polyethylene or
an inorganic lubricant, e.g. alumina, kaolin, silica or
molybdenum sulfide. The application of a lubricant is
advisable when the film bases do not slide favorably in
relation to one another.
The properties of the perpendicular magnetic recording
film adapted for use in combination with the curren-t magnetic
3~`3~
- 2~ -
heads, such as a single pole type head and a ring type
head include: a half value width ~50 ~ 8~, a perpendicular
coerclve force Hcv > 500 Oe, a ratio of Hcv/Hch > 2.0, and
an anisotropy field Hk > 4KOe. These properties can be
readily achieved in the present invention, as will be under-
stood from the description of the Examples.
The present invention is now explained by way of
Examples.
xample 1
Samples of the perpendicular magnetic recording medium
were prepared under the following conditions.
A. The Opposing Targe~ Sputtering Device (Fig. 3)
¦l) Material of the Targets Tl , T2:
cobalt alloy containing 17S by weight
(18.5 atomic %) of chromium
(2) Distance Between the Targets Tl , T2:
100 mm
(3) Magnetic Field in the Neighborhood of the
Targets Tl , T2:
150 ~ 300 gauss
(4) Dimension of the Targets Tl , T2:
150 mm x 100 mm x 5 mm (thickness)
(5) Distance of the Base 20 From the Ends of
the Targets Tl , T2:
35 mm
B. Base 20:
a 75 mm thick polyester film
C. Thickness of Cobalt Alloy Layer:
1.3 microns
The perpendicular magnetic recordiny layer was produced
by the following procedure.
The base 20 was first fixed on the base holder 21 and
then the gas in the vacuum vessel was evacuate.d until an
ultimate degree of vacuum of 1 x 10 6 Torr or less could be
achieved. Subsequently, an argon gas was admitted into the
vacuum vessel 10 until the pressure was increased to ~ mm
Torr. After pre-sputtering for 3 to 5 minute.s, the shutter
- 23 -
(not shown in Fig. 3) was retracted and the formation of a
perpendicular magnetic recording layer on the base was
initiated.
Several properties of the magne~ic mediums so produced
are given in Table 1.
The properties of the prepared samples were measured as
stated above in the description of the perpendicular magnetic
recording films with the columnar or particle-pattern.
The properties of the samples in this Example are given
in the following table.
Table 2
.
. ~
Cr stal Degree Perpendicular
Y of curl Coercive Force
Thlckne s s
Sample cf Base Orien-
Nos.(u-m) _ tation Q~50 P (%) Hcv (Oe)
11-6 (002) 5.0 7 1050
214 (002) 4.3 8 1030
312 (002) 4.5 10 1000
410 (002) 3.2 14 1100
The samples (the cleaved surface of the samples) were
of particle pattern. The degree of curl (Kp) was increased
in accordance with the decrease in the thickness of the
base, which was polyester film. However, in Sample 4, the
degree of curl (Rp)~ which was 14% was not unfavorable,
because the perpendicular magnetic recording layer (cobalt
alloy layer) had flexibility as will be explained later.
Exa~le 2
Samples of the perpendicular magnetic recording medium
were prepared by successively forming on a base a Permalloy
magnetic layer and a cobalt alloy layer under the following
conditions.
- 24 -
A. Formation of Penmalloy Layer
(1) Opposing Target Sputtering:
device used in Example 1
(2) Targets: -
permalloy plates of 80 wt% of nickel and
20 wt% of iron
(3) Operating Condition:
an argon pressure of 1 x 10 Torr and a
deposition rate of 400 A/minute
(4) Obtained Permalloy Layer:
the layer had a coercive forc~ of 16 Oe
and a thickness of 0.44 microns (~m).
B Formation of Co alloy Layer
The Co alloy Layer was formed under the same
conditions as in Sample 3 of Example 1.
The e,lectromagnetic conversion characteristic of the -''
sample prepared in the present Example (Sample 5) was
~` ' evaluated by means of the magnetic head of the perpendicula.r
magnetic recording mode, in which the main and auxiliary
electrodes are opposed to one another.
Table 3
ReCording (RBPI) 1 10 50100 150
Density
Output (5/N)(dB) 35 35 25 16
The electromagnetic conversion characteristic in terms
of the output of magnetic head did not vary appreciably
after the perpendicular magnetic recording medium (Sample 5)
had been used repeatedly a thousand times, thereby proving
the favarable flexibility of the magne.tic tape. The cross-
-sectional pattern of Sample 5 was particle.
- 25 -
Example 3
Samples of the perpendicular magnetic recording medium
were prepared under the following conditions.
A. Opposing Target Sputtering Device (Fig. 6)
(1~ Material of the Targets Tl , T2
cobalt alloy containing 17% by weight
l18.5 atomic %) of chromium.
(2) Base 20:
a 75-micron thick polyimide film
l3) Distance Between the Targets Tl and T2:
100 mm
(4) Magnetic Field in the Neighborhood of the
Targets Tl., T2:
150 ~ 300 gauss
(5) Dimension of the Targets Tl , T2:
300 mm x 125 mm x 5 mm (thickness)
(6) Distance of the Base from the Ends of the
Targets Tl , T2:
30 mm
B. Operation Procedure
The cobalt alloy layer was formed by successively
performinq the following procedures.
(1) The base 20 was fixed on the base holder 21
and thén the vacuum vessel 10 was evacuated until an ultimate
degree of vacuum of 2 x 10 6 Torr or less was achieved.
(2) Argon gas was admitted into the vacuum
vessel 10 until the pressure of 4 mm Torr or 1.5 mm Torr was
obtained. After the pre-sputtering for 3 to 5 minutes, the
shutter (not shown in Fig. 6) was retracted, thereby exposing
the base 20 to the plasma gas. The base was held in a
stationary position.
Several properties of the samples are given in
Table 4.
- 26 -
Table 4
~ ,
Preparation Value Magnetic of
Condltions Width Properties Curl
__ . _ __ _~ _ . . . _ . ._ , , ~ . .
Deposition Ar Gas ~
SampleORate Pressure 50 Hcv Hcv/Hch Hkeff Kp
No.~A/min) (mm Torr) ~Oe) (KOe) ~%3
. ~
6 42g0 ~ 6.5 1220 2.7 4.~ +11
7 2300 4 6.2 1100 2.5 4.8 + ~
8 1150 4 5.0 750 2,6 5.3 + 5
9 1610 1,5 5.0 1020 2 8 5.0 + 8
-
The symbol of "Mch" in Table 4 indicates the horizontal
coercive force.
As is apparent from Table 4, the excellent perpen-
20 dicular magnetic layers can be prepared by means of amethod which achieves high deposition rate. In addition,
the degree of curl (Kp) is advantageously low.
le 4
The same procedure as in Example 3 was repeated;
25 however, the base was a 50 micron polyester f,ilm and the
argon gas pressure was tha-t given in Table 5.
Several properties of the samples are given in Table 5.
~rable 5
. .
Half
Preparation Value Magnetic Degree of
Conditions Width Properties Curl
San~le Deposition ~rgon Gas
Nos. ORate Pressure ~50 ~lCv Hcv/Hch E~eff Kp
(A/min)_ (mm Torr) ~Oe) (KOe) (~)
1090 8 6.4 660 2.6 4.8 ~5
11 1200 ~ 5.0 600 2.6 4.7 +5
12 1170 1.5 4.5 550 2.7 ~.5 +6
. . ~
As is apparent from Table 5, the deposition rate is
high, the degree of curl IKp) is low and a polyester film
having a low hea-t resistance can be used as the base of a
perpendicular magnetic recording medium. In addition, the
argon gas pressure can be varied in a broad range.
Example 5
The same procedure as in Example 3 was repeated.
However, in the operation procedure (2) an ion bombardment
was carried out prior to depositing the cobalt alloy on the
base ( 75 micron thick polyimide film). For the ion bombard-
ment, the argon gas pressure was adjusted to 50 mm Torr and
an alternating voltage of 300 V was applied ~etween the
shutter and the base for a period of three minutes, thereby
inducing a glow discharge and ion bombardmen-t of the base.
Some of the bases of the samples in the present examples
were subjected to degassing at 280C for a period of
60 minutes in vacuum.
Several properteis of the samples are given in Table 6.
- 28 -
Table 6
..~
Preparation~TalfMagne-~c ~egree
ConditionsValueProperties of D~gassing
_ ~Mdth __ _ Chrl
Sample Deposition ~ ~ ~ Hc ~I--/ ~ e~~
Nos ~a (mm T_ ) (Oe) Hch (KCe) (~)
13 1190 1.5 2.9 700 2.~ 5.4 +11 x
14 1280 1.5 2.9 940 2.6 5.4 + 6 o
1260 4 3.7 1060 3.1 5.7 + 6 o
16 2000 4 3.4 ~50 2.4 5.4 +10 x
17 2410 4 2.8 1120 2.4 5.9 ~11 o
18 520 4 4.6 820 2.5 5.5 ~ 4 x
lg 590 4 4.7 990 ~.8 5.7 + 8 o
3690 4 3.1 1150 3.3 5.5 +11 x
21 3910 4 3.0 1150 2.7 5.6 +ll o
.. ._ .
Such gaseous components as moisture, water and the
like, were analyzed with a mass spectorgraph (SM-800 type
produced by Japan Vacuum Enginnering), when ~n ultimate
degree of vacuum was attained during the formation of the
perpendicular magnetic recording layers. The gas pressures
of moisture (H2O) and oxygen (2) were 1.5 x 10 6 Torr and 8
x 10 Torr, respectively. The de.gree of vacuum in ~he
present example was, thexefore, about one ~enth as low as
about 2 x 10 Torr which is the degree of vacuum required
for the conventional ~F sputtering. This degree of vacuum
would be advantageous from a commercial point of view,
because the perpendicular magnetic recording layers could be
produced economically by a vacuum evacuation system with low
capacity. The properties of the perpendicular magnetic
recording layers were not significantly influenced by the
-- 29 --
degassing. Degassing, which is allegedly indispensable for
polyimide films in conventional RF sputtering, can therefore
be omitted according to the present invention.
Example 6
The procedure of Example 1 was repeated. ~owever, the
argon gas pressure was 4 mm Torr and the deposition rate
varied. The results are given in Fig. 16, wherein the
abscissa indicates the deposition rate (R) and the ordinate
indicates the perpendicular coercive force (~cv), the
anisotropy field (Hkeff) and the half value width (~50).
As is apparent from Fig 16, an increase in the deposition
rate (R) of up to 4000 A per minute does not result in
deterioration of the magnetic properties required for the
perpendicular magnetic recording mediums; but rather the
15 perpendicular coercive force Hcv is increased at a higher
deposition rate.
The temperature of the base was normal temperature
~about 20C) at the beginning of sputtering and was not
intentionally elevated. Without intentional heating of the
20 base, which has been believed to be indispensable in the RF
sputtering, the cobalt alloy layers having good perpendicular
magnetic recording properteis could be produced at a high
deposition rate of 4000 A per minute.
Example 7
The same procedure as in Example S was repeated.
However, the argon gas pressure was 4 mm Torr and the
deposition rate of cobalt alloy layer was varied up to a
level of approximately 4000 A/min. The results are given in
Fig. 17. The tendency of the magnetic properties and half
30 value width depending on the deposition rate ~R) shown in
Fig. 17 is similar to that shown in Fig. 16. However, in
Fig. 17, the half value width (~50~ is advantageously
decreased with an increase. in the deposition rate (R), which
is due to the bombardment in a glow discharge in the present
35 Example.
The degree of curl (Kp) shown in~Fig. 17 is acceptable,
although it increases high at a high deposition rate (R) of
3~
- 30 -
about 4000 A/min,
Example 8
Samples of the perpendicular magnetic recording medium
were prepared under the following conditions.
A. Opposing Target Sputtering Device (Fig. 4)
(l) Material of the Targets Tl / T2: cobalt
alloy containing 17% by weight of chromium
~2) Base 20: a 75 micron thick polyimide film
(3) Distance Between the Targets Tl and T~:
100 mm
(4) Magnetic Field in the Neighborhood of Targets
Tl, T2:
100~ 150 gauss
(5) Dimension of the Targets Tl , T2: 100 mm in
diameter x 5 mm in thickness
(6) ~istance of Base 20 from the Ends of the
Targets Tl , T2 ~5 mm
(7) B:ias Power Source 41: RF current of 13.56 MHz
B. Operat:ion Procedure
(l) The base 20 was fixed on the base holder 21
and then the vacuum vessel 10 was evacuated until an ulti-
mate degree of 2 x 10 6 Torr or less was achieved.
(23 Argon gas was admitted into the vacuum
vessel 10 until a pressure of 4 mm Torr was obtained.
Sputtering was carried out at an argon gas pressure of 4 mm
Torr while power of 500 W was applied between the targets T
, T2 and shields 17, 18. A l-micron thick cobalt alloy
layer was formed on each base 20. Several properties of the
samples are given in the following table.
Table 7
Preparati~l Condltions Value Magnetlc Pro~erties lurl
Sample Voltage of Dkposition ~aHcv H~cv]Hch Hkeff Kp
Source O
(V~ . (A/min~ ~Oe,) (KOe.) (~)
.~
22 0 1150 5.0 750 ~.65.3 + 5.0
23 -~5 1150 2.8 970 3.~5.6 + 5.2
24 -50 1130 2.7 1030 4.05.3 + 6.0
25 -75 1090 2.7 950 4.35.1 + 8.0
26 -100 830 12.4 8gO 2.64.1 ~13.0
In Table 7, the bias voltage was applied to all the
samples except for Sample 22. The half value width (~950),
which indicates the degree of C axis orientation of the
cobalt alloy, can be improved by a bias voltage having an
absolute value of less than 100 V. The application of a
bias voltage of -100 V results in a decrease in the deposition
rate, deterioration of the degree. of C axis orientation, and
an increase in the degree o:E curl (Kp).
Example 9
_ _
The procedure of Example 8 was repe.ated. However, the
bias voltage from the bias power source 41 was applied only
during the growth period of the cobalt alloy layer up to a
thickn~,ss of 0.1 ~mt and during the remaining growth period,
namely the growth of the cobalt alloy layer from 0.1 to
1.0 ~m, the bias voltage was kept at 0 ~. The results are
given in the following table.
- 32 ~
Table 8
.. , ~
Preparation Conditions Value Magnetic Properties Curl
_ Whdth
Sample Voltagë of Deposition
Nos. Bias Power Rate ~50 Hcv Hcv/Hch H~eff Kp
Source O
(V~ (A/min) (Ce) (KOe) (%)
... _ ~ .
27 - 75 1100 2.5 950 3.5 5.5 5.0
28 -100 1050 2.71000 3.8 5.5 5.3
The obtainted half value width (~050) and degree of
curl (Kp) are very desirable as the properties of the
perpendicular magnetic recording mediums.
Example 10
The procedure of Example 8 was repeated. However, the
Permalloy layer was formed before the formation of the
cobalt alloy layer under the following conditions.
A. Opposing Target Sputtering Device (Fig. 3)
(1) ~aterial of the Targets T1 , T2:
Ni-Fe Permalloy (22% by weight Oe iron)
(2) Base 20: 25 micron thick polyester film
(3) Magnetic Field in the Neighborhood of the
Targets Tl , T2: 250~300 gauss
(4) Distance of Base 20 from the End of the
Targets Tl ~ T2 50 mm
(5) Bias Power Source 41
Direct Current ( 0~75 Volt)
B. Operation Procedure
Argon gas was admitted into the vacuum vessel,
until the pressure was frorn 50 to 100 mm Torr. An
35 alternating current of 50 Hz was applied between the anode
and cathode at 300 V for a period of 5 minutes, thereby
inducing a glow discharge between the anode and cathode and
in the neighborhood of the surface of the base. Then the
argon gas pressure was decreased to 10 mm Torr, which was
the predetermined sputtering pressure. For a period of from
3 to 5 minutes, the base was shielded from the plasma gas by
a shutter, and then the shutter was opened to initiate the
formation of a perpendicular magnetic recording layer, The
results are given in the following table.
Table 9
Preparation Condition
Sample Bias Deposition Coercive Degree
Nos. Voltage of RateForce of
Direct Curl
Current (V) (A/min)Hc~Oe) Kp(~)
29 0 650 11 -~0
(Control)
- 50 650 10 2
3~ - 75 65~ 10 +10
In the Permalloy layer of Sample No. 29 slight cracks
were locally detected. Sample Nos. 30 and 31 were free of
cracks and exhibited a small deg~ee of curl.
