Note : Les descriptions sont présentées dans la langue officielle dans laquelle elles ont été soumises.
P . F . B 1 o~r, 1 ey -7
GAIN R~GllLATION CIRCUIT
This invention relates to electronic amplifier
circuits navinq a regulatable gain, and ir. particular to
a gain regulation circuit for use in a telephone
instrument anci whereby the gain of the instrumerit speech
paths may ~e adjusted e.g. for matching the receiver
gain to the line loop impedance.
An electronic telephone lnstrumen~ includes an
amplifying speech path whereby speech signals are
relaye~ from the instrument microphone to the line and
fro~n ~he iine to the inStrument receiver. I~ ~.7ill be
appreciated tha~ for optimum performance of the
instrument the receiver and transniitter speech paths
must each include some means of gain regulation to
prevent overloading and to provide matchiny of the
receiver gain ;:o the line impedarlce~ The line or loop
impedance is in general proportional to the length of
the subscriber loop between the instrumen~ and rhe
exchange and can thus have any value wi~hin a clearly
defined range. Because it is necessary to cater for a
wide variation of loop length, it is essential that the
receiver circuit of the subscriber's instrument
incorporates provision for line length compensation. To
compensate loop length variations many telephone
administrations require the provision of receiver
circuits that can be set to a gain figure anywhere
between ~pper and lower preset limits.
Furthermore, in order to prevent overloading
and consequent saturation of the transmitter output
state to the line it is necessary to provide some form
of gain control whereby a speecll si~lnal waveform Iriay be
limi~ed in arplitude. This technique comlilo~ ;no~1n a
~,`'
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soft clippinq is described in co-pending Canadian patent
application Serial No. 422,785 of P.F. Blomley, filed
March 3, 19~3.
A particularly useful variable gain element is the
transistor long tailed pair the gain of which can be
determined by controlling the common emitter current of
the pair. ~he use of a single long tailed pair is however
somewhat restricted by its significantly non linear
signal/gain characteristic which gives rise to distortion
Eor all but very low signal levels. In some applications
this distortion may be outside the limits speci~ied by the
telephone administration.
The object of the present invention is to provide a
gain regulation circuit whereby a smooth and continuous
qain variation between predefined limits in response to a
control signal may be effected.
According to the invention there is provided a signal
amplifier element having a controllable gain and
comprising two or more transistor long tailed pairs,
wherein the transistors of said pairs are so constructed
that the maxima of the signal/gain charac~eristics of said
pairs are symmetrically disposed about the signal ~ero
level, and wherein the signal/gain characteristic of all
the pairs acting in combination includes a substantially
constant region.
According to another object of the invention there is
provided a gain regulator and signal amplifier circuit
e g. for an electronic telephone subset, the circuit
comprising a first long tailed pair of transistors having
substantially identical characteristics, an~ 2n further
lon~ tailed pairs of transistors, where n is an integer
including unity, wherein corresponding transistors of the
2n further pairs have emitter areas in the ratio l a; a
: l; where a lies between zero and unity, whereby the gain
maxima oE the characteristics corresponding to the further
long taile~ pair are symmetrically disposed about the
signal zero so as to provide together a
substantially constant gain region of sigllificantly
lower gain than the gain maxima of the first long tailed
pair, and wherein tl~e circuit includes control means
~ ereby weigllted cont~ibutions to the circuit gain
characteristic may be provide~ from the balanced pair
and from the 2n unbalanced pairs so as to provide a
stage gain adjustable between limits defined by ~he gain
of the ~alanced pair and the gain of the unbalanced
pairs. ~le have found that by providing an emitter area
mismatch between the transistors of a long tailed pair
the maxima of the signal/gain characteristic is off-set
from the signal zero by a voltage ~ such that
V = ~ t log x
q
where k is Boltzman's constant, t is the absolute
terperature, q is the electronic charge and x is the
ratio of er~litter areas. By combining two or more
suitably off-set long tailed pairs with a further
balanced pair a composite characteristic ha~ing a gain
smoothly adjustable between two defined gain limits is
obtained. ~he term gain as ernployed herein is understood
to include values of less than unity..
Embodiments of the invention will now be
described with reference to the accompanying drawings in
which -
Fig. 1 illustrates the signal/gaincharacteristic of a conventional balancecl tr~nsistor
long tailed pair;
Fig. 2 shows an amplifier element comprising
two long tailed transistor pairs provided with emitter
area inbalance;
Fig. 3 illustrates the signal/gain
characteristic of the circuit of Fig. 2;
Fig. 4 illustrates the extension of the
characteristic offset technique to three or more pairs;
Fig. 5 shows a telephone receiver gain
regulatioll circuit embodying the techniques o~ Figs. l
... . . _ _ . . ... ... .. .
-- 4
and 4;
and Fig. 6 illustra~es the gain characteristics
of the circuit of Fig . 5 .
Referring to Fig. l, the signal/gain
characteristic o a conventional transistor long tailed
pair is sho~n.
As will be well known to those skilled in the
art the gain g of a balanced, i.e. a symmetrical long
tailed pair is defined by
g = q I sech q Vin
4 kt 2 kt
where q is the electronic charge, I is the tail current
of the pair, k is Boltzman's constantl t iS the absolu e
temperature and Vin is the instantaneous input signal
level. As can be seen the characteristic has the
ap~earance of a somewha~ distorted inverted ~ and it
will thus be apparent that low distortion amplificatiol1
is achieved only for a small input signal voltage s~ins.
For small input signals the circuit has substantially
unit gain.
In the circuit shown in Fig. 2 two long tailed
pairs TR2l,TR24 and TR22,TR23 are employed. The
transistors of the two pairs are designed such that
their emitter areas are in the ratio l : a and a : l
where a is a number between zero and unity. This offsets
the gain maxima of the two pairs to opposite sides of
the input signal zero level as shown in Fig. 3. The
voltage separation V between the two maxima is given by
the equation
V = 2 kt lo9 a
q
where k is Boltzman's constant, t is the absolute
temperature and q is the electronic charge. The
resultant gain characteristic of the two pairs is shown
by the dashed line in Fig. 3. ~1ith a suitable choice of
the area ratio a, typically froml to l , the
characteristic has a substan':ially constant region of
... . . , ... . . . . . _ _ _ _, .. ... . . . .
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gain a, less than unity, extending V on either side o~ the
signal zero. This considerably enhances the low distortion
signal handling capability of the circuit as compared to a
conventional single long tailed pair amplifier. In this cir-
cuit, gain has been traded for signal handling capability.
The technique of Figures 1, 2 and 3 can be combined
as shown in Fiyures 4 and 5. Figure 4 illustrates the gain
charac-terlstics of a circuit comprising three long tailed pairs
wherein the respective emitter area ratios of the pairs of
transistors are 1 :a; 1 : 1 and a : 1. As can be seen from
Figure 4 the circuit can be set in a high (unit) gain condi-
tion wherein the balanced long tailed pair acts as the major
amplifying element, or to a low ~a~ gain condition wherein the
unbalanced long tailed pairs act as the major amplifying ele-
ment. Weighted combinations of these two states can be emp-
loyed to provide any gain value between these limits. In the
same way the technique can be extended to the use of five, or
in general (2n + 1), long tailed pairs, i.e. one balanced pair
and 2n unbalanced pairs. It will of course be clear that in
general that in any applica-tion the final design will be a
trade ofE between lineari-ty and circuit complexi-ty. The ratio
1 : a is increased for each subsequent pair.
Al-though the -techniques have been described in terms
oE discrete transistors it is, in many applica-tions, advan-
tageous to replace the individual pairs of -transistors by a
single pair of multi-emitter transistors, each pair of emitters
corresponding -to one long tailed pair.
~ n application of the techniques described herein is
shown in Fiyure 5 of the accompanying drawings which is a cir-
~0 cuit diagram of a gain regulation circuit stage e.g. for thereceiver speech path of an electronic telephone subse-t. The
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circuit output is coupled to the line via a further linear
amplifier stage (not shown). In order to comply with the
design specifications of most telephone administrations, it is
necessary -to provide some means of gain control to compensate
for the range of different line loop lengths between the
exchange and the subscribers. Typically, the gain must be
variable between two limits which represent -the 'best case'
and 'worst case' loop lengths. The gain must be continuously
and smoothly variable between these limits. A circuit which
satisfies these constraints is shown in Fi~ure 5.
Referring to Figure 5, the gain regulation circuit
provides an accurately defined gain of any value between first
and second predetermined levels. The circuit comprises first
and second multi-emitter transistors TR51 and TR52 arranged
in a multiple long-tailed pair configuration. Corresponding
pairs of emitters ElA, E2A; ElB, E2~; ElC; E2C are coupled
each to a corresponding current source I1, I2, I3 arranged in
the 'tail circuit' of the pair. The transistor collector loads
may be provided by forward biased diodes Dl and D2, which pro-
vide temperature compensation of the circuit.
As is ]cnown to those skilled in the art, -the imped-
ance R oE a diode is given by the expression;
R = kt
qI
where ]c is Boltzman's constant, t is the absolute temperature,
is the electronic charge and I is the current in absolute
units. It will be noted that this impedance expression is the
tempera-ture dependent term of the gain expression of equation
(1) above.
Thus, by providing diode loads in the collector cir-
cuits of -the long tailed pair transistors a very significan~
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degree of temperature compensation is provided. This compen-
sation is sufficient to provide substantially temperature in-
dependent operation throughout the ambient temperature range
specified by the various telephone administrations.
The transistors TR51 and TR52 are fabricated such that
the first emitters ElA and E2A are of substantially equal area,
i.e. -they are capable of carrying substantially equal currents.
The second pair of emitters Els, E2B have areas in the ratio
1 : a and the third pair ElC, E2C have areas in the ratio a : 1,
where a is an arbitrary fraction between zero and unity. Such
a structure has the property that, in the absence of an input
signal, the currents flowing through the respective pairs of
emitters are in the ratio 1 ~ a and a : 1.
The circuit has two gain limits (Figure 4) of unity
and a and is adjustable to any value between these limits. The
ratio 1 : _ is equal to the ratio of the receiver gain value
limits specified for the receiver gain value limits specified
by the telephone administration. This ensures that the over-
all gain of the receiver channel can be set to any value within
these limits.
In use, the arrangement may provide a gain regula-tion
feedback loop for an amplifier whereby speech signals are ou-t-
put to the line. The bases of the transistors TR51 and TR52
are connected respectively to the speech signal and to a fixed
potential. The emitter circui-ts are fed, via a current ampli-
Eier (not shown) with currents corresponding to the line vol-
tage. It will be appreciated that this line voltage is inversely
proportional -to the subscriber loop impedance. In use, the
line impedance is determined from the line voltage and corres-
ponding currents are then fed to the rail circuits oE the longtalled pairs to provide a corresponding gain value.
-7a~
The gain condition of the circuit is determined by
the weighted contributions of the balanced and
~V~
.
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unbalanced pairs in the composite output charac~eristic.
By increasing or decreasing currents Il, I2, I3
fed into the tail circuit of the transistor pairs the
contribution of each pair can be correspondingly reduce~
or increa.sed. This provides a smooth transfer, as shown
in Fig~ 6, frorl a unit gain condition ~herein the
balanced pair provides the major contribution to the
output sigllal to a low (a) gain condition ~here the
unbalanced pairs handle the major portion of the signal
and the contribution of the balallced ~air is reduced
su~stantially to zero. By suitable control of the
currents Il, I2, I3 the circuit may be set to any
gain val~e bet~een these t~o limit conditions.
rhe arrangement is equivalent to a ~lurality or
lonc-tailed pairs arranged in paralle], the no-signal
balance currents of each pair being defined by the
emitter area ratio of the pair.
Advantageously the arrangemenrs described
herein may be fabricated in integrated circuit form.
